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MDS1100 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MDS1100		Advanced Power Technology	RF Power Transistors: AVIONICS	Original	PDF	216.74KB	4
MDS1100		Microsemi	a high power COMMON BASE bipolar transistor.	Original	PDF	120.69KB	4

MDS1100 Price and Stock

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Microchip Technology Inc


Microchip Technology Inc MDS1100 RF TRANS NPN 65V 1.03GHZ 55TU-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
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Microchip Technology Inc	MDS1100		34			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	MDS1100			38 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	MDS1100			53 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Buy Now

MDS1100 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MDS1100 Abstract: J162 transistor j237 Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization	Original	MDS1100 55TU-1 MDS1100 J162 transistor j237	PDF
Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization	Original	MDS1100 55TU-1 MDS1100	PDF
1030 mhz Abstract: MDS1100 1030 PULSED Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization	Original	MDS1100 55TU-1 MDS1100 1030 mhz 1030 PULSED	PDF
transistor j237 Abstract: MDS1100 Contextual Info: MDS1100 1100 Watts, 50 Volts Pulsed Avionics at 1030 MHz GENERAL DESCRIPTION CASE OUTLINE 55TU-1 The MDS1100 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1030 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization	Original	MDS1100 MDS1100 55TU-1 transistor j237	PDF
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Contextual Info: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original		PDF
MG1007-42 Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30 Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are	Original	MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30	PDF