MD1X Search Results

MD1X

Abstract: 40SS1041AX 40SS1041AX-1 020C
Contextual Info: Bothhandusa.com 40SS1041AX-1 40 PIN SMD ETHERNET 100 BASE –TX HIGH SPEED LAN MAGNETICS P/N: 40SS1041AX-1 LF DATA SHEET Page : 1/1 Feature l l l l l l Symmetrical TX and RX channels for auto MD1/MD1X capability . Compliant with IEEE 802.3u standards including 350µH

md1x

Abstract: 40ST1041AX-1
Contextual Info: Bothhand USA. e-mail: sales@bothhandusa.com http://www.bothhandusa.com 40 PIN SMD ETHERNET 100 BASE –TX HIGH SPEED LAN MAGNETICS Page : 1/1 P/N: 40ST1041AX-1 DATA SHEET Feature Symmetrical TX and RX channels for auto MD1/MD1X capability . z Compliant with IEEE 802.3u standards including 350µH OCL

D008

Abstract: GR-1089-CORE TISP3072F3 TISP3082F3 3082f3
Contextual Info: TISP3072F3,TISP3082F3 LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP30xxF3 LV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3072F3 ‘3082F3 VDRM V(BO)

Contextual Info: 1 I IE I File No. I I 182 , I ISHEET Q 1 / 1 S PE C IF IC A T IO N S C u rrent: 1A O p era tin g T em pe ra tu re : —5 5 ‘C To + 1 0 5 ‘C C o n ta c t R e sista n ce : 2 0 M illio h m s Max. In sulation R e sista n ce : 5 0 0 0 M e g a o h m s Min D ie le c tric S tre n g th : 1 0 0 0 V A C Min

Contextual Info: TISP1072F3,TISP1082F3 DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxF3 Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘1072F3 ‘1082F3 D Package Top View

Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP1072F3,TISP1082F3 *R DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxF3 Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

TM070

Abstract: p5md AD10 AD11 AD12 MN10200 MN102H460B tm10b BR17
Contextual Info: M IC R O C O M P U T E R M N 102H00 MN102H460B LSI 説明書 Pub.No.22346-011 PanaXSeriesは松下電器産業株式会社の商標です。 その他記載された会社名及びロゴ、製品名などは該当する各社の商標または登録商標です。

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP3125F3, TISP3150F3, TISP3180F3 MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP31xxF3 MV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

Contextual Info: TISP7125F3 THRU TISP7180F3, TISP7240F3 THRU TISP7380F3 MEDIUM & HIGH-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP7xxxF3 MV, HV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP3240F3, TISP3260F3, TISP3290F3,TISP3320F3,TISP3380F3 HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxF3 HV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage

GR-1089-CORE

Abstract: TISP7072F3 TISP7082F3 TISP7125F3 TISP7150F3 TISP7380F3
Contextual Info: *R oH S CO M PL IA NT TISP7072F3,TISP7082F3 LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP70xxF3 LV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages VDRM V(BO) Device V

GR-1089-CORE

Abstract: TISP3125F3 TISP3150F3 TISP3180F3 3125F3 3180F3 D008
Contextual Info: TISP3125F3, TISP3150F3, TISP3180F3 MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP31xxF3 MV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge VDRM V(BO) DEVICE

GR-1089-CORE

Abstract: TISP1072F3 TISP1082F3
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP1072F3,TISP1082F3 *R DUAL FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP1xxxF3 Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

3072F3

Abstract: GR-1089-CORE TISP3072F3 TISP3082F3
Contextual Info: oH V SC AV ER OM A I S IO P L L A N IA BL S NT E TISP3072F3,TISP3082F3 *R LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP30xxF3 LV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

mn102

Abstract: CF19 panasonic mark AT0 md1x t17c b.a datae sheet of ku EW23 in6 16a TM21DP mn10200
Contextual Info: MICROCOMPUTER MN102H00 MN1021617/F1617 LSI User's Manual Pub.No.22317-041E PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotypes and product names written in this manual are trademarks or registered trademarks

Contextual Info: TISP3125F3, TISP3150F3, TISP3180F3 MEDIUM-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP31xxF3 MV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3125F3

Contextual Info: TISP7072F3,TISP7082F3 LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP70xxF3 LV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages V(BO) VDRM Device V V ‘7072F3 58 72 ‘7082F3

Contextual Info: *R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP7072F3,TISP7082F3 LOW-VOLTAGE TRIPLE ELEMENT BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP70xxF3 LV Overvoltage Protector Series Patented Ion-Implanted Breakdown Region - Precise DC and Dynamic Voltages

PE-60

Abstract: TISP1072F3 TISP1082F3
Contextual Info: TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 1997, Power Innovations Limited, UK SEPTEMBER 1993 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage

Contextual Info: TISP1072F3, TISP1082F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright 1997, Power Innovations Limited, UK SEPTEMBER 1993 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION ● Ion-Implanted Breakdown Region Precise and Stable Voltage

HSP1072F3

Abstract: dual Symmetrical Transient Voltage Suppressors
Contextual Info: HSP1072F3, HSP1Q82F3 DUAL ASYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS C o p y rtjftt0 1997. Powgr Innovation» Limited. UK SEPTEMBER 1993 - REVISED SEPTEMBER 1987 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION • ton-4mptonted Breakdown Region D PACKAQE TOP View

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED "PROPRIETARY' TO BEL FUSE INC, AND SHALL NOT BE CDPIEIj REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN A P P R O V A L OF BEL FUSE INC. LEDI PI N PI N 8 + 7 - + ELECTRICAL TURNS CHARACTERISTICS — 9 - P I N 10

Contextual Info: *R oH S CO M PL IA NT TISP3240F3, TISP3260F3, TISP3290F3,TISP3320F3,TISP3380F3 HIGH-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP3xxxF3 HV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

3082f3

Abstract: 3072F3
Contextual Info: TISP3072F3,TISP3082F3 LOW-VOLTAGE DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP30xxF3 LV Overvoltage Protector Series Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘3072F3 ‘3082F3 VDRM V(BO)