MCM6508 Search Results

Contextual Info: MCM6508 MCM6518 H , _ 1024 x 1 BIT STATIC RANDOM ACCESS MEMORY T he M C M 6508 and M C M 6518 are fu lly sta tic 1 02 4x 1 R A M s fabricated using CM O S silicon gate tec h n o lo g y . They o ffe r lo w p ow er o pe ratio n fro m a single + 5 V supp ly w ith data rete ntion to 2.0 V. The

im6508

Abstract: im6518 MC146805 6508 intersil HM6508 1024x1 MCM6508 MCM6508-25 MCM6518-25 ICM6518
Contextual Info: MCM6508 MCM6518 ''I -_ 1024 X 1 B IT S T A T IC R A N D O M A C C E S S M E M O R Y The M C M 6508 and M C M 6518 are fu lly s ta tic 1 0 2 4 x 1 R A M s fabricate d using CM O S silicon gate tech n o lo g y. They o ffe r lo w pow er ope ration fro m a single + 5 V supp ly w ith data rete ntio n to 2.0 V - T h e

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated