MCL 1 034 Search Results
MCL 1 034 Price and Stock
Eaton Corporation MCL1V0603-470-RMultilayer Ceramic Capacitors MLCC - SMD/SMT IND, 47nH, 100mA, 2.6O, SMT |
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Eaton Corporation MCL1V0603-430-RMultilayer Ceramic Capacitors MLCC - SMD/SMT IND, 43nH, 100mA, 2.4O, SMT |
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Eaton Corporation MCL1V0603-4R3-RMultilayer Ceramic Capacitors MLCC - SMD/SMT IND, 4.3nH, 300mA, 0.44O, SMT |
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Eaton Corporation MCL1V0603-4R7-RMultilayer Ceramic Capacitors MLCC - SMD/SMT IND, 4.7nH, 300mA, 0.45O, SMT |
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MCL 1 034 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TC55YD1837YB-333
Abstract: daj 8P CQ245
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OCR Scan |
tc55yd1837yb-333288-word36-bittc55yd1837yb+5 | |
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Contextual Info: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory |
OCR Scan |
tc55yd1873yb-333144-word72-bittc55yd1873yb+2 | |
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Contextual Info: TOSHIBA TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory |
OCR Scan |
tc55yd1837yb-333288-word36-bittc55yd1837yb+2 | |
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Contextual Info: TOSHIBA TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory |
OCR Scan |
tc55yd1837yb-333288-word36-bittc55yd1837yb+3 | |
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Contextual Info: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory |
OCR Scan |
tc55yd1873yb-333144-word72-bittc55yd1873yb+3 | |
qcb 4lContextual Info: TO SH IB A TENTATIVE TC55YD1837YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 524,288-WORD BY 36-BIT SYNCHRONOUS STATIC RAM DESCRIPTION SILICON GATE CMOS SigmaRAM, 21x1 Dp The TC55YD1837YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory |
OCR Scan |
tc55yd1837yb-333288-word36-bittc55yd1837yb+3 | |
MCL 1 034
Abstract: TC55YD1873YB-333
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OCR Scan |
tc55yd1873yb-333144-word72-bittc55yd1873yb+3 | |
RO4350BContextual Info: Ceramic Bandpass Filter 50Ω BFCN-2555+ 2500 to 2610 MHz Maximum Ratings Features o Operating Temperature Storage Temperature o -55 C to 100 C -55oC to 100oC o RF Power Input* 1.5W at 25 C *Passband rating, derate linearly to 0.25W at 100oC ambient. RF IN |
Original |
-55oc100ocbfcn-2555fv1206-1+4 | |
Rogers RO4350B
Abstract: BFCN-1560 RO4350B RO4350B price RO4350B* LTCC TB-285 PL-158 FV1206-1 BFCN1560 EA 2105
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Original |
bfcn-1560-55oc100ocfv1206-1+11 | |
Rogers RO4350B
Abstract: BFCN-2555
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Original |
bfcn-2555100oc2002/95/ecrogers ro4350b | |
RO4350BContextual Info: Ceramic Bandpass Filter BFCN-2900+ WR 0+] Maximum Ratings Features R 2SHUDWLQJ 7HPSHUDWXUH 6WRUDJH 7HPSHUDWXUH R & WR & R& WR R& R 5 3RZHU ,QSXW : DW & 6PDOO VL]H 7HPSHUDWXUH VWDEOH /7&& FRQVWUXFWLRQ &$6 67</( )9 |
Original |
bfcn-2900100oc2002/95/ecro4350b | |
Rogers RO4350B
Abstract: BFCN-2900 RO4350B PL-158 FV1206-1 RO4350B* LTCC
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Original |
bfcn-2900-55oc100ocfv1206-1+7 | |
Unisem
Abstract: MIC2563A MP8000C MP-8000
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Original |
83314-v28ssopmic2563a3a3275m42+6 | |
F41100
Abstract: Rogers RO4350B
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Original |
-55oc100ocbfcn-1560fv1206-1+7 | |
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Rogers RO4350B
Abstract: ro4350b PL-158 FV1206-1 72-5011
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Original |
hfcn-7150d-55oc100ocfv1206-1+7 | |
Rogers RO4350BContextual Info: Ceramic Bandpass Filter 50Ω BFCN-2900+ 2700 to 3100 MHz Maximum Ratings Features o Operating Temperature Storage Temperature o -55 C to 100 C -55oC to 100oC o RF Power Input* 1.5W at 25 C • Small size • Temperature stable • LTCC construction CASE STYLE: FV1206-1 |
Original |
-55oc100ocbfcn-2900fv1206-1+5 | |
HFCN-6010
Abstract: 6982F TB-285 Rogers RO4350B FV1206-1 RO4350B HFCN6010
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Original |
hfcn-6010fv1206-1ro4350bm123382+5 | |
OC81Contextual Info: TOSHIBA UNDER DEVELOPMENT TMP93CM84 LOW POWER CMOS 16-bit MICROCONTROLLERS TMP93CM84F 1. OUTLINE AND DEVICE CHARACTERISTICS The TMP93CM84F is high-speed advanced 16-bit microcontroller developed for controlling medium to large-scale equipment. It enable low power consumption |
OCR Scan |
tmp93cm8416-bittmp93cm84f80-pin+2 | |
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Contextual Info: Ceramic HFCN-5500+ HFCN-5500 High Pass Filter 50Ω 6000 to 11500 MHz Features Maximum Ratings Operating Temperature o o o o 1 • • • • • • • • 3 Application -55 C to 100 C Storage Temperature -55 C to 100 C 7W max. at 25oC RF Power Input* *Passband rating, derate linearly to 3W at 100°C ambient. |
Original |
hfcn-5500fv1206-1hfcn-5500dro4350b+2 | |
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Contextual Info: Ceramic High Pass Filter 50Ω HFCN-7150+ 7900 to 11000 MHz Features Maximum Ratings • • • • • • • -55oC to 100oC Operating Temperature o Storage Temperature o -55 C to 100 C RF Power Input* 6W max. at 25ºC *Passband rating, derate linearly to 3W at 100°C ambient. |
Original |
-55oc100ochfcn-7150fv1206-1+5 | |
HFCN-4600
Abstract: FV1206-1 RO4350B mcl 0 432
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Original |
hfcn-4600-55oc100oc2002/95/ec+4 | |
TB 2920
Abstract: HFCN-3100 FV1206-1 HFCN-3100D RO4350B
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Original |
hfcn-3100-55oc100ocfv1206-1+5 | |
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Contextual Info: Ceramic High Pass Filter 50Ω HFCN-3500+ 3900 to 9800 MHz Features Maximum Ratings • • • • • • • -55oC to 100oC Operating Temperature o Storage Temperature o -55 C to 100 C RF Power Input* 7W max. at 25ºC *Passband rating, derate linearly to 3W at 100°C ambient. |
Original |
-55oc100ochfcn-3500fv1206-1+5 | |
HFCN-5500
Abstract: FV1206-1 HFCN-5500D RO4350B
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Original |
hfcn-5500-55oc100ocfv1206-1+2 | |