MBR6045 Search Results

MBR6030PT

Abstract: MBR6035PT MBR6040PT MBR6045PT
Contextual Info: MBR6030PT thru MBR6045PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR6030PT MBR6035PT MBR6040PT MBR6045PT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC V 30

Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com Features • Pb−Free Package is Available*

MBR6045PT

Abstract: MBR6045PTG
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total 30 A Per Diode Leg Pb−Free Packages are Available*

Contextual Info: MBR6040WT MBR6045WT SANGDEST MICROELECTRONICS Technical Data Data Sheet N0745, Rev. - Green Products MBR6040WT/MBR6045WT SCHOTTKY RECTIFIER Applications: • • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection

6045pt

Abstract: MBR6030PT MBR6045PT
Contextual Info: MBR6030PT - MBR6045PT 60A SCHOTTKY BARRIER RECTIFIER Features • · · · · · · Schottky Barrier Chip TO-3P Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability A B High Current Capability and Low Forward Voltage Drop

b6045

Abstract: rectifier diode 6 amp 400 volt BR6045 400 amp 20 volt rectifier 340D-02
Contextual Info: MOTOROLA Order this document by MBR6045PT/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR6045PT SWITCHMODE Pow er R e c tifie r The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the

MBR6045PTG

Abstract: MBR6045PT
Contextual Info: MBR6045PT SWITCHMODE Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total 30 A Per Diode Leg Pb−Free Packages are Available*

Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com Features • Pb−Free Package is Available*

Contextual Info: MBR6045 thru MBR60100R Silicon Power Schottky Diode VRRM = 45 V - 100 V IF = 60 A Features • High Surge Capability • Types from 45 V to 100 V VRRM DO-5 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.

Schottky Barrier Rectifier

Abstract: 247 DIODE schottky MBR6045WT MBR6045WTG
Contextual Info: MBR6045WT SWITCHMODEt Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 May Be Connected for • • •

20725

Abstract: PD-20725 035H 40HF MBR6045WT P460 20725 g
Contextual Info: Bulletin PD-20725 rev. A 10/06 MBR6045WT SCHOTTKY RECTIFIER 60 Amp IF AV = 60Amp VR = 45V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular waveform 60 A VRRM 45 V IFSM @ tp = 5 s sine 2900 A VF 0.55

Contextual Info: MBR6045WT SWITCHMODEt Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 May Be Connected for • • •

Contextual Info: MBR6045 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current50 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage45 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800 V(FM) Max.(V) Forward Voltage800m @I(FM) (A) (Test Condition)157

Contextual Info:
MCC TM Micro Commercial Components MBR6030PT THRU MBR6045PT
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • 60 Amp Guard ring for transient protection Low Forward Voltage Drop

40HF

Abstract: MBR6045WT
Contextual Info: Bulletin PD -20815 09/04 MBR6045WTPbF SCHOTTKY RECTIFIER 60 Amp IF AV = 60Amp VR = 45V Description/Features Major Ratings and Characteristics The MBR6045WTPbF center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate

Contextual Info: <Ssm.i-Condu.Gtot tPioduct*., Dnc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Advance information MBR6045PT SWITCH MODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier

MBR6045PT

Contextual Info: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction – Terminals 1 and 3 May Be Connected for

Contextual Info: DIGITRON SEMICONDUCTORS MBR6045PT 60A SCHOTTKY RECTIFIER MAXIMUM RATINGS Symbol MBR6045PT Unit Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage Rating VRRM VRWM VR 45 V Average rectified forward current Rated VR IF(AV) 60 @ TC = 125°C

Contextual Info: PD-2.476 rev. A 06/98 MBR6045WT SCHOTTKY RECTIFIER 60 Amp TO-247AC Major Ratings and Characteristics Characteristics Description/Features The MBR6045WT center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable

Contextual Info: MBR6045WT SWITCHMODEt Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features http://onsemi.com • Dual Diode Construction; Terminals 1 and 3 May Be Connected for • • •

Contextual Info: MBR6030PT - MBR6045PT 60A SCHOTTKY BARRIER RECTIFIER Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

MARKING FZ

Abstract: 6045PT MBR6030PT MBR6045PT
Contextual Info: MBR6030PT - MBR6045PT VISHAY 60A SCHOTTKY BARRIER RECTIFIER y LITEM ZI POWER SEMICONDUCTOR Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability

Contextual Info: MBR6045 thru MBR60100R Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 60 A Features • High Surge Capability • Types up to 100 V VRRM DO-5 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base.

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR6045WT Features 60 Amp Schottky l High Surge Capacity l Low Power Loss, High Efficiency l High Current Capability, Low VF l Metal of silicon Rectifier, majority Carrier Conduction