MBR5 Search Results

Contextual Info: MBR545 5.0 AMPS. Schottky Barrier Rectifiers Voltage Range 45 Volts Current 5 Amperes TO-220A Features a a a a a a a a Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency

MBR5045WT

Abstract: FST5035 FST5040 FST5045 FST5050 MBR5035WT MBR5040WT
Contextual Info: 50Amp Schottky Rectifier FST5035 - FST5050 Dim. Inches Minimum Industry P art Num ber FST5035 FST5040 FST5045 FST5050 MBR5035WT MBR5040WT MBR5045WT Repetitive Peak Reverse Voltage Maximum Minimum .185 .0 8 7 .0 5 9 .0 4 0 .0 7 9 .118 .016 .819 .6 2 7 .215

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR545 Preliminary DIODE SCHOTTKY BARRIER RECTIFIER  DESCRIPTION + The UTC MBR545 is a schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop, high current capability and high efficiency, etc.

Contextual Info: MOTOROLA Order this document by MBR5025L/D SEMICONDUCTOR TECHNICAL DATA Advance Information MBR5025L SWITCHMODE Power Rectifier Motorola Preferred Device The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the

Contextual Info: MBR540 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Epitaxial Construction 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability

mbr520

Abstract: LOW FORWARD VOLTAGE DROP DIODE RECTIFIER MBR540 MBR560 MBR545
Contextual Info: MBR520 thru MBR560 5 Amp HT Power Schottky Barrier Rectifier 20 Volts to 60 Volts Features • High Junction Temperature Capability • Low Leakage Current and Low Forward Voltage Drop • Low Power Loss and High Efficiency Maximum Ratings • Operating Junction Temperature: 150°C

MBR5025L

Contextual Info: MBR5025L Preferred Device SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Very Low Forward Voltage Drop Max 0.58 V @ 100°C

Contextual Info: MBR5100MFS, NRVB5100MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop

MBR500100CT

Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT MBR50060CT MBR50080CT k 4026
Contextual Info: MCC MBR50020CT THRU MBR500100CT Micro Commercial Corp. 21201 Itasca St. Chatsworth, CA 91311 Phone: 818 701-4933 Fax: (818) 701-4939 Features • • • • 500 Amp Schottky Barrier Rectifier 20 to 100 Volts Metal of siliconrectifier, majonty carrier conducton

Contextual Info: MBR50020CT thru MBR50040CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 500 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed

Contextual Info: S EM IC O N D U C T O R MBR545CT TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE SW ITC H IN G M O D E POW ER SUPPLY A PPL IC A T IO N . C O N V E R T E R & C H O PPER A PPLIC A TIO N . FEA TU R ES • A verage O utput R ectified C urrent DIM MILLIMETERS

Contextual Info: MBR 5100 SCHOTTKY DIE SPECIFICATION TYPE: MBR5100 RSingle □Dual Anode General Description: 100 V 5 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage

1N5829

Contextual Info: 1N5829,1N5830 1N5831 MBR5831H, HI gl MOTOROLA l t ‘w i{ ïin « r s D a t a S h e e t H O T C A R R IE R P O W E R R E C T IF IE R S S C H O T T K Y B A R R IE R R E C T IF IE R S . e m p lo y in g th e S c h o ttk y B a rrie r p r in c ip le in a la rg e area m e ta lto -s ih c o n p o w e r diod e. S ta te -o f- th e -a rt g e o m e try fe a tu re s e p ita x ia l

IR 1838

Abstract: 1838 MBR5100 1738 IR
Contextual Info: Micro-Electro-Magnetical Tech Co. SCHOTTKY DIE SPECIFICATION TYPE: MBR5100 Single Anode General Description: 100 V 5 A Low Ir ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current

500AMP

Abstract: MBR50020CT MBR50030CT MBR50035CT MBR50040CT MBR50045CT
Contextual Info: Transys MBR50020CT R THRU MBR50045CT(R) Electronics L I M I T E D SCHOTTKY DIODES MODULE TYPE 500A Features High Surge Capability 500Amp Rectifier 20-45 Volts Types Up to 45V VRRM TWIN TOWER A R Maximum Ratings Operating Temperature: -40 C to +175 Storage Temperature: -40 C to +175

MBR540

Contextual Info: MBR540 SERIES SCHOTTKY BARRIER RECTIFIERS VOLTAGE 40 to 200 Volts CURRENT 5 Amperes FEATURES • Epitaxial Construction 0.052 1.3 0.048(1.2) 1.0(25.4)MIN. • Guard Ring Die Construction for Transient Protection • Low Power Loss, High Efficiency • High Surge Capability

Contextual Info: MBR500150CT R DACO SEMICONDUCTOR CO., LTD. THRU MBR500200CT(R) SCHOTTKY DIODE MODULE TYPES 500A Features 500Amp Rectifier 150-200 Volts High Surge Capability Types Up to 200V V RRM Twin Tower A Maximum Ratings R Operating Temperature: -55 C to+150 Storage Temperatur: -55 C to +150

MBR5150

Abstract: mbr560 MBR5100 MBR5200 MBR580
Contextual Info: Compact Technology MBR560 thru MBR5200 REVERSE VOLTAGE - 60 to 200 Volts FORWARD CURRENT - 5.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

mbr530

Abstract: mbr560 MBR530-MBR545
Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# MBR545 Features • • • • Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency

MBR5100

Abstract: SEMPO ELECTRONIC MBR580 mbr510
Contextual Info: MBR580 thru MBR5100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR580 MBR5100 VRRM V 80 100 VRMS V 56 70 Symbol VDC V 80 100 Characteristics

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR545F Features x x x x x 5 Amp Schottky Barrier Rectifier 45 Volts Low Forward Voltage Drop High frequency properties and switching speed

Contextual Info: MBR5831H1 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current25 @Temp (øC) (Test Condition)85# V(RRM)(V) Rep.Pk.Rev. Voltage40 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.800¥ V(FM) Max.(V) Forward Voltage820m @I(FM) (A) (Test Condition)78

Contextual Info: Schottky PowerMod CPT50235 - CPT50245 A Dim. Inches R G Baseplate A=Common Anode B Q N W Baseplate Common Cathode F U U C Baseplate D=Doubler H V Microsemi Catalog Number Industry Part Number CPT50235* 440CNQ030 444CNQ035 MBR50035CT 444CNQ040 MBR50040CT 444CNQ045

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MBR545F Features x x x x • • 5 Amp Schottky Barrier Rectifier 45 Volts Low Forward Voltage Drop High frequency properties and switching speed