MBR300100CTR Search Results

MBR300100CTR Datasheets (3)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBR300100CTR		America Semiconductor	HIGH POWER -SCHOTTKY RECTIFIERS; IF::300A; case_package::Twin Tower Modules	Original	PDF	1.03MB	2
MBR300100CTR		GeneSiC Semiconductor	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 300A 2TOWER	Original	PDF		3
MBR300100CTR		America Semiconductor	MBR300100 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::300A; case_package::Twin Tower Modules	Scan	PDF	251.99KB	1

MBR300100CTR Price and Stock

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Navitas Semiconductor


Navitas Semiconductor MBR300100CTR - Bulk (Alt: MBR300100CTR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBR300100CTR	Bulk		10 Weeks	40	1 - 10 - 100 $112.99 1000 $102.38 10000 $102.38	Buy Now

MBR300100CTR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBR30045CT thru MBR300100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 300 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	mbr30045ct mbr300100ctr mbr30060ct mbr30080ct +1mbr300100ct	PDF
Contextual Info: MBR30045CT thru MBR300100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 300 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	mbr30045ct mbr300100ctr mbr30060ct mbr30080ct +1mbr300100ct	PDF
MBR30060CT Abstract: MBR300100CT MBR30045CT MBR30080CT Contextual Info: MBR30045CT thru MBR300100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 300 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	mbr30045ct mbr300100ctr mbr30060ct mbr30080ct +1mbr300100ct	PDF
Contextual Info: MBR30045CT thru MBR300100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 300 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	mbr30045ct mbr300100ctr mbr30060ct mbr30080ct +1mbr300100ct	PDF
Contextual Info: Naina Semiconductor Ltd. MBR30045CT thru MBR300100CTR Silicon Schottky Diode, 300A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified	Original	mbr30045ct mbr300100ctr mbr30060ct mbr30080ct +1mbr300100c	PDF