MBR200100CTR Search Results

MBR200100CTR Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MBR200100CTR		America Semiconductor	HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules	Original	PDF	1.02MB	2
MBR200100CTR		GeneSiC Semiconductor	Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 200A 2TOWER	Original	PDF		3
MBR200100CTR		America Semiconductor	MBR200100 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules	Scan	PDF	249.87KB	1

MBR200100CTR Price and Stock

Filter by Manufacturer

Select Manufacturer


GeneSic Semiconductor Inc MBR200100CTR DIODE MOD SCHOT 100V 200A 2TOWER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MBR200100CTR	Bulk			40	1 - 10 - 100 $78.29 1000 $78.29 10000 $78.29	Buy Now
NAC	MBR200100CTR				25	1 - 10 - 100 $88.38 1000 $88.38 10000 $88.38	Buy Now
Navitas Semiconductor MBR200100CTR Diode Modules SI PWR SCHOTTKY 2TWR 20-100V 200A100P/70
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	MBR200100CTR					1 - 10 - 100 $78.29 1000 $78.29 10000 $78.29	Get Quote
Onlinecomponents.com	MBR200100CTR					1 - 10 - 100 $74.59 1000 $74.59 10000 $74.59	Buy Now

MBR200100CTR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT	PDF
Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed	Original	MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT	PDF
Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 200 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)	Original	MBR20045CT MBR200100CTR MBR20060CT MBR20080CT MBR200100CT	PDF
MBR20045CT Contextual Info: Naina Semiconductor Ltd. MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified	Original	MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100C	PDF