MBR200100CTR Search Results
MBR200100CTR Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MBR200100CTR | America Semiconductor | HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules | Original | 1.02MB | 2 | ||
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Diodes, Rectifiers - Modules, Discrete Semiconductor Products, DIODE SCHOTTKY 100V 200A 2TOWER | Original | 3 | |||
| MBR200100CTR | America Semiconductor | MBR200100 - HIGH POWER -SCHOTTKY RECTIFIERS; IF::200A; case_package::Twin Tower Modules | Scan | 249.87KB | 1 |
MBR200100CTR Price and Stock
Navitas Semiconductor MBR200100CTR- Bulk (Alt: MBR200100CTR) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MBR200100CTR | Bulk | 10 Weeks | 40 |
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Buy Now | |||||
MBR200100CTR Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed |
Original |
MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT | |
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Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 200 A Features • High Surge Capability • Types up to 100 V VRRM Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified "R" devices have leads reversed |
Original |
MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100CT | |
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Contextual Info: MBR20045CT thru MBR200100CTR Silicon Power Schottky Diode VRRM = 45 V - 100 V IF AV = 200 A Features • High Surge Capability • Types from 45 V to 100 V VRRM Twin Tower Package • Not ESD Sensitive Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) |
Original |
MBR20045CT MBR200100CTR MBR20060CT MBR20080CT MBR200100CT | |
MBR20045CTContextual Info: Naina Semiconductor Ltd. MBR20045CT thru MBR200100CTR Silicon Schottky Diode, 200A Features • • • • Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM TWIN TOWER PACKAGE Maximum Ratings TJ = 25oC unless otherwise specified |
Original |
MBR20045CT MBR200100CTR MBR20045CT MBR20060CT MBR20080CT MBR200100C |