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Power Integrations 1SD210F2-MBN750H65E2 IC GATE DRVR HI/LOW SIDE MODULE
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DigiKey	1SD210F2-MBN750H65E2	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Power Integrations 1SP0335V2M1-MBN750H65E2 IC GATE DRVR HI/LOW SIDE MODULE
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DigiKey	1SP0335V2M1-MBN750H65E2	Tray			6	1 - 10 $167.93 100 $167.93 1000 $167.93 10000 $167.93	Buy Now
Mouser Electronics	1SP0335V2M1-MBN750H65E2					1 - 10 $218.30 100 $211.59 1000 $211.59 10000 $211.59	Get Quote
Richardson RFPD	1SP0335V2M1-MBN750H65E2		4		1	1 $131.09 10 $131.09 100 $131.09 1000 $131.09 10000 $131.09	Buy Now
Power Integrations 1SP0335V2M1C-MBN750H65E2 IC GATE DRVR HI/LOW SIDE MODULE
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DigiKey	1SP0335V2M1C-MBN750H65E2	Tray			6	1 - 10 $225.31 100 $225.31 1000 $225.31 10000 $225.31	Buy Now
Mouser Electronics	1SP0335V2M1C-MBN750H65E2					1 - 10 $292.90 100 $283.89 1000 $283.89 10000 $283.89	Get Quote
Power Integrations 1SD210F2-MBN750H65E2_OPT1 IC GATE DRVR HI/LOW SIDE MODULE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SD210F2-MBN750H65E2_OPT1	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Power Integrations 1SP0335D2S1-MBN750H65E2 Power Management Modules ONLY for Hitachi MBN750H65E2 module
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1SP0335D2S1-MBN750H65E2					1 $130.98 10 $130.98 100 $117.48 1000 $117.48 10000 $117.48	Get Quote

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MBN750H65E2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IGBT 6500V Abstract: Hitachi DSA00281 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R7 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles) IGBT 6500V Hitachi DSA00281	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R10 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles)	PDF
MBN750H65E2 Abstract: IGBT 6500V 09008 Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R6 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles) MBN750H65E2 IGBT 6500V 09008	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R8 MBN750H65E2 Preliminary Specification Silicon N-channel IGBT 6500V E2 version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT. ∗ Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles)	PDF
Contextual Info: IGBT MODULE Spec.No.IGBT-SP-09008 R9 MBN750H65E2 Silicon N-channel IGBT 6500V E2 version FEATURES  Soft switching behavior & low conduction loss: Soft low-injection punch-through High conductivity IGBT.  Low driving power due to low input capacitance MOS gate.	Original	IGBT-SP-09008 MBN750H65E2 000cycles)	PDF
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R4 MDM500H65E2 Preliminary Specification FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .	Original	SR2-SP-09007 MDM500H65E2	PDF
P4 diode Abstract: MBN500H65E2 p5 diode Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R1 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .	Original	SR2-SP-09007 MDM500H65E2 P4 diode MBN500H65E2 p5 diode	PDF
mbm150gr12 Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt Contextual Info: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics	Original	MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt	PDF
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R2 MDM750H65E2 TENTATIVE Datasheet FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .	Original	SR2-SP-09003 MDM750H65E2	PDF
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R3 MDM750H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .	Original	SR2-SP-09003 MDM750H65E2	PDF
Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R4 MDM750H65E2 FEATURES  Low noise recovery: Ultra soft fast recovery diode.  High reverse recovery capability: Super HiRC Structure.  High reliability, high durability diodes.  Isolated heat sink terminal to base .	Original	SR2-SP-09003 MDM750H65E2	PDF
C2E1 Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12 Contextual Info: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。】Ｃ：適合Ｓ.Ｃ：適合Ｎ：未対応（但し適用除外項目物質を含有）【ステータス】Ｍ：量産品Ｗ：ＷＳ	Original	MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12	PDF
MDM750H65E2 Abstract: 50uM Contextual Info: DIODE MODULE Spec.No.SR2-SP-09003 R1 MDM750H65E2 P1 TENTATIVE Datasheet FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .	Original	SR2-SP-09003 MDM750H65E2 MDM750H65E2 50uM	PDF
3AG1A Contextual Info: DIODE MODULE Spec.No.SR2-SP-09007 R2 MDM500H65E2 Preliminary Specification FEATURES ∗ Low noise recovery: Ultra soft fast recovery diode. ∗ High reverse recovery capability: Super HiRC Structure. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base .	Original	SR2-SP-09007 MDM500H65E2 3AG1A	PDF