MBM29DD640E Search Results
MBM29DD640E Datasheets (6)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MBM29DD640E10PBT | Fujitsu | 64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
| MBM29DD640E10TN | Fujitsu | 64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
| MBM29DD640E10TR | Fujitsu | 64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
| MBM29DD640E12PBT | Fujitsu | 64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
| MBM29DD640E12TN | Fujitsu | 64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
| MBM29DD640E12TR | Fujitsu | 64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 |
MBM29DD640E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: Flash Memory Data Sheet Table Latest Version 2.5V Flash AE project October Italic Letter : Revised Point Capacity Part Number English AE Code AE spec Rev, 16M MBM29DD16XTD/BD-10 AE1.0E 32M MBM29DD32XTE/BE-12 August/E MBM29PDD322TE/BE AE0.5E 64M MBM29DD640E-10/12 |
Original |
ts05ds05-mbm29dd16xtd/bd-10mbm29dd32xte/be-12mbm29pdd322te/be+1 | |
FPT-48P-M19
Abstract: FPT-48P-M20
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Original |
mbm29dd640e48-pinfpt-48p-m19fpt-48p-m20 | |
BGA-101P-M01Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM |
Original |
ds05-50208-2emb84ld23381ej-10101-ballbga-101p-m01 | |
32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
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Original |
ds05-50208-1emb84ld23381ej-10101-ballmb84vd23381ej-90+2 | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V |
Original |
ds05-50210-1emb84ld23280ea-10/mb84ld23280ee-10101-ball | |
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Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash |
Original |
ds05-50208-3emb84ld23381ej-10101-ball | |
ADVANCED MICRO DEVICES
Abstract: AE2E MB84LD23380EF-10
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Original |
mb84ld23380ef-10101-ballf0006advanced micro devices+1 | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM |
Original |
ds05-50208-3emb84ld23381ej-10101-ball | |
MB84LD23381EF-10Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD23381EF-10 • FEATURES • Power supply voltage of 2.3 to 2.7V for FCRAM • Power supply voltage of 2.3 to 2.7V for Flash |
Original |
mb84ld23381ef-10101-ballf0006 |