MBM29DD640E Search Results
MBM29DD640E Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MBM29DD640E10PBT |
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64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
MBM29DD640E10TN |
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64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
MBM29DD640E10TR |
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64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
MBM29DD640E12PBT |
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64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
MBM29DD640E12TN |
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64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 | ||
MBM29DD640E12TR |
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64M (8M x 8/4M x 16) BIT Dual Operation | Original | 368.92KB | 72 |
MBM29DD640E Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: Flash Memory Data Sheet Table Latest Version 2.5V Flash AE project October Italic Letter : Revised Point Capacity Part Number English AE Code AE spec Rev, 16M MBM29DD16XTD/BD-10 AE1.0E 32M MBM29DD32XTE/BE-12 August/E MBM29PDD322TE/BE AE0.5E 64M MBM29DD640E-10/12 |
Original |
TS05DS05- MBM29DD16XTD/BD-10 MBM29DD32XTE/BE-12 MBM29PDD322TE/BE MBM29DD640E-10/12 | |
FPT-48P-M19
Abstract: FPT-48P-M20
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Original |
MBM29DD640E 48-pin FPT-48P-M19 FPT-48P-M20 | |
BGA-101P-M01Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM |
Original |
DS05-50208-2E MB84LD23381EJ-10 101-ball BGA-101P-M01 | |
32 KB SRAM
Abstract: DS05-50208-1E SWITCH SA125
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Original |
DS05-50208-1E MB84LD23381EJ-10 101-ball MB84VD23381EJ-90 32 KB SRAM DS05-50208-1E SWITCH SA125 | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50210-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64 M (x ×8/× ×16) FLASH MEMORY & 8 M (× ×8/× ×16) STATIC RAM MB84LD23280EA-10/MB84LD23280EE-10 • FEATURES • Power supply voltage of 2.3 V to 2.7 V |
Original |
DS05-50210-1E MB84LD23280EA-10/MB84LD23280EE-10 101-ball | |
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash |
Original |
DS05-50208-3E MB84LD23381EJ-10 101-ball | |
ADVANCED MICRO DEVICES
Abstract: AE2E MB84LD23380EF-10
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Original |
MB84LD23380EF-10 101-ball F0006 ADVANCED MICRO DEVICES AE2E MB84LD23380EF-10 | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50208-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M (x 16) FLASH MEMORY & 16 M (× 16) SRAM Interface FCRAM MB84LD23381EJ-10 • FEATURES • Power Supply Voltage of 2.3 V to 2.7 V for Flash • Power Supply Voltage of 2.3 V to 2.7 V for FCRAM |
Original |
DS05-50208-3E MB84LD23381EJ-10 101-ball | |
MB84LD23381EF-10Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.1E_w Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84LD23381EF-10 • FEATURES • Power supply voltage of 2.3 to 2.7V for FCRAM • Power supply voltage of 2.3 to 2.7V for Flash |
Original |
MB84LD23381EF-10 101-ball F0006 MB84LD23381EF-10 |