MBL TRANSISTOR Search Results

Contextual Info: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES

transistor npn 100w amplifier

Contextual Info: PANASONIC INDL/ELEK -CIO 12E D t.T3aäSa OD ID Mbl 1 Silicon Epitaxal Base Mesa Transistor T - 33-2.1 2SB713 PNP 2SD751 (NPN) TOP-3 Package (See Page 36 For Dimensions) 2SB713 (PNP) Absolute Maximum Ratings (Ta=25°C) Hem Collector-Base Voltage Collector-Emitter Voltage

PHILIPS MOSFET MARKING

Abstract: BF998 TRANSISTOR mosfet BF998 dual gate mosfet n-channel dual gate mcb351
Contextual Info: • ^53^31 aG23b34 Mbl ■ APX N AMER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification date of issue April 1991 FEATURES • Short channel transistor with high ratio |YfS I/C* • Low noise gain controlled amplifier to 1 GHz.

Contextual Info: 55E » SANKEN ELECTRIC CO LTD • 7^0741 DODDTDS Mbl H S A K J Silicon PNP Epitaxial Planar ☆Complement to type 2 S C 2 8 3 7 ☆LAPT 2SA1186 Application Example : • Outline Drawing 2 .MT-100 T03P Audio and General Purpose Electrical Characteristics

turbo mii

Abstract: KSZ8841M-series KSZ8841-16MQL ksz88xx KSZ8841MVLI 80386 programmers manual KSZ8841 KSZ8841-32MQL KSZ8841P LDO application note
Contextual Info: KSZ8841-16/32MQL/MVL/MVLI/MBL Single-Port Ethernet MAC Controller with Non-PCI Interface Rev. 1.6 General Description The KSZ8841-series single-port chip includes PCI and non-PCI CPU interfaces, and are available in 8/16-bit and 32-bit bus designs. This datasheet describes the

KSZ8842M

Abstract: KSZ8842-16MQL SZ8842-16 ferrite transformer power for power supply atx KSZ8842 KSZ8842-16MVL KSZ8842-32MQL KSZ8842-32MVL KSZ8842P KSZ8842-16
Contextual Info: KSZ8842-16/32 MQL/MVL/MVLI/MBL 2-Port Ethernet Switch with Non-PCI Interface Data Sheet Rev 1.9 General Description The KSZ8842-series of 2-port switches includes PCI and non-PCI CPU interfaces, and are available in 8/16-bit and 32-bit bus designs see Ordering Information .

Contextual Info: KSZ8841-16/32MQL/MVL/MVLI/MBL Single-Port Ethernet MAC Controller with Non-PCI Interface Rev. 1.6 General Description The KSZ8841-series single-port chip includes PCI and non-PCI CPU interfaces, and are available in 8/16-bit and 32-bit bus designs. This datasheet describes the

Contextual Info: KSZ8842-16/32 MQL/MVL/MVLI/MBL 2-Port Ethernet Switch with Non-PCI Interface Data Sheet Rev 1.9 General Description The KSZ8842-series of 2-port switches includes PCI and non-PCI CPU interfaces, and are available in 8/16-bit and 32-bit bus designs see Ordering Information .

Mbl transistor

Contextual Info: SK 150 MBL 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # #  , 0. /         , 0. -4 /5 6  9 6 5  , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4

Contextual Info: SK 150 MBL 055 T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # #  , 0. /         , 0. -4 /5 6  9 6 5  , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4

Contextual Info: SK150MBL055T MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET 1"" 12"" # #  , 0. /         , 0. -4 /5 6  9 6 5  , 0. -4 /5 6 ; Values Units . 304 074 6.4 :74 0.4 1 1 8 8 <74=>6.4 / 074 6.4

2SB681

Abstract: 2SD551 AC73
Contextual Info: i 5 /U D > N P N = a ffilK ^ + tïK h ^ > ^ 5 2SD551 , SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR O U n i t in mm o Power A m p lif ie r A p p lic a tio n s . V o g o — 1 5 0 V M in. Â Ü ÎŒ T -t, h 7 / ^-7 • f T = 15MHz ( Typ.) 3 2SB681 'J ¡C £ £

Contextual Info: 2N4402/4403 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO -92 • Collector-Emitter Voltage: Veto =40V • Collector Dissipation: Pe max =625mW ABSOLUTE MAXIMUM RATINGS (Ta =25°C) Characteristic Symbol Rating Unit Collector-Base Voltage

2N4293

Abstract: 2N4918 2N4919 2N4920 2N4921 2N4922 2N5190 MJE13002 MJE13003 MJE340
Contextual Info: General Transistor Corporation CASE TO-126 IC MAX = .5-4A V c e o (SUS) = 40-400V POWER TRANSISTORS kCONT (A) MAX VCEO (V) 0.5 1.0 300 40 60 80 300 400 40 40 NOTES: VCEV <V) yes • yes • 600 400 yes 60 60 60 60 yss 80 80 80 80 yes yes yes yes ‘ hfe 01 MHz

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U8A TELEPHONE: 979 378-2992 (212) 227-8008 FAX: (979) 37*8980 Silicon Transistors 2N5305,6,6A absolute maximum ratings: (25°C) <unieMoth«rwi*«»p«cin>d) Collator to B*i« VcnQ 26 Collector to Emitter V«no

Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

AN-994

Abstract: C-150 IRGS8B60K IRGSL8B60K
Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.

AN-994

Abstract: C-150 IRGS8B60K IRGSL8B60K Mbl transistor
Contextual Info: PD - 95645A IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free.

AN-994

Abstract: C-150 igbt 400V 40A
Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

60V PNP TO-92

Abstract: 500ma 40v pnp
Contextual Info: Transistors • TO-92 Package/PNP Type For General Purpose Small Sig nal Am plifiers Part No. Package BVceo Min. 2N3703 TO-92 EC8 50V BVceo BV ebo Min. Min. 30V 5V '“ ° @VC0 . h? . @IC & VCE Min. Max. Max. 100nA 20V 30 150 50mA 5V VcE(sat) Max. VBE(sat)

transistor 103

Abstract: BC869 BC869-10 BC869-16 BC869-25 marking code CFC SOT
Contextual Info: 71 1 0 0 5 b DObfl4Sfl TT7 • P H I N BC869 SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC 868/BC869 is the matched complementary pair suitable for class-B audio output

Contextual Info: PD - 95645 IRGB8B60KPbF IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. •TO-220 is available in PbF as a Lead-Free.

SL4B

Abstract: FD059
Contextual Info: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.

C-150

Abstract: IRGS4B60K IRGSL4B60K
Contextual Info: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.