MBK915 Search Results

PHE13002AU

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHB101NQ03LT

Abstract: PHD101NQ03LT PHP101NQ03LT PHU101NQ03LT
Contextual Info: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BT151U series C Thyristors Product specification April 2004 1;3 Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications

500R

Abstract: 600R 800R BT150 BT258 BT258U BT151 Application note
Contextual Info: Philips Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced

MB111

Contextual Info: Philips Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced

100C

Abstract: BUJ103AU
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUJ101AU

Abstract: 400V 10A NPN transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ101AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

PHU2N50E

Abstract: 400 w self oscillating ballast Philips fluorescent ballast circuit ballast Self-Oscillating cfl Self-Oscillating SOT533 PHP2N50 UBA2021 40 w self oscillating ballast
Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHU2N50E FEATURES QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance

PHU11NQ10T

Abstract: SOT533
Contextual Info: PHU11NQ10T TrenchMOS standard level FET Rev. 01 — 28 May 2002 Product data M3D445 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHU11NQ10T in SOT533 I-pak .

Contextual Info: DISCRETE SEMICONDUCTORS DAT BT258U series Thyristors logic level Product specification March 1999 NXP Semiconductors Product specification Thyristors logic level BT258U series GENERAL DESCRIPTION Passivated, sensitive gate thyristors in a plastic envelope, intended for use

A 673 transistor

Abstract: LB 122 NPN TRANSISTOR SOT533 100pd PHE13002AU TRANSISTOR AH SOT-533 transistor aa a TRANSISTOR 106 d1 SILICON DIFFUSED POWER TRANSISTOR
Contextual Info: Product specification Philips Semiconductors Silicon Diffused Power Transistor PHE13002AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

500C

Abstract: 650C BT145 BT151U
Contextual Info: Philips Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications

buj103

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

transistor b 647 c

Abstract: PHE13003AU b 647 transistor
Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc.

Contextual Info: DISCRETE SEMICONDUCTORS DAT BT151U series C Thyristors Product specification April 2004 1;3 Semiconductors Product specification Thyristors BT151U series C GENERAL DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring

Contextual Info: PHP/PHU101NQ03LT TrenchMOS logic level FET Rev. 02 — 25 February 2003 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP101NQ03LT in SOT78 TO-220AB