POWER MOSFET Rise Time 1000V NS
Abstract: MBG40H-3 fast recovery diode 1000v 10A opto fet MOSFET 800V 10A 100U
Contextual Info: J37/A M icropac Microcircuits Division MBG40H-3 Micropac Power MOSFET • • • • • • • Each FET VDSS = 1000V Half Bridge Driver Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Hermetically Sealed
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OCR Scan
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MBG40H-3
O-258
POWER MOSFET Rise Time 1000V NS
MBG40H-3
fast recovery diode 1000v 10A
opto fet
MOSFET 800V 10A
100U
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PDF
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MBG40H
Abstract: VDD-600 s600 io downhole so-10 31AY T0257
Contextual Info: Micropac MBG40H Microcircuits Division N-Channel Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Hermetically Sealed = 1000V ^DS on = 5.00 Vdss Id = 3.1 A Description
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OCR Scan
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T0257
l50Kn
MBG40H
VDD-600
s600 io
downhole
so-10
31AY
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PDF
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MBG40H-2
Abstract: 555 ic MOSFET 800V 10A mosfet vn 10 MBG40H
Contextual Info: /r o /> Micropac MBG40H-2 Microcircuits Division Micropac Dual Power MOSFET • • • • • • Q1 Each Leg VDSS = 1000V Push Pull Configuration Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Simple Drive Requirements Hermetically Sealed
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OCR Scan
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MBG40H-2
J-150Â
MBG40H-2
555 ic
MOSFET 800V 10A
mosfet vn 10
MBG40H
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PDF
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