MB CF Search Results

Migration Guide for Intel StrataFlash Memory J

Abstract: Intel StrataFlash Memory j3 Intel Stacked CSP 1997 28F008B3 28F008S5 28F016B3 28F128W18 28F160B3 28F320B3 28F800B3
Contextual Info: PRODUCT SELECTION MATRIX P Intel 1.8V Wireless Flash W18/W30 R O D Intel StrataFlash® Memory (J3) U C T S Synchronous Intel StrataFlash® Memory (K3/K18) Advanced+ Boot Block (C3) X8 Organization X16 8 Mb 16 Mb 32 Mb Density 64 Mb 128 Mb 256 Mb Burst

SST39WF160x

Abstract: AM29F SST25VF016B tsop i 12mmx20mm 48-WFBGA SST38VF640x TSOP 28 SPI memory Package flash FLASH CROSS sst39vf040 WFBGA-48 48TSOP
Contextual Info: Silicon Storage Technology, Inc. NOR Flash Cross Reference Guide 1.8V, 3V, 5V www.SST.com Comparison Guide Spansion Company Density Spansion SST SST AM29F SST39SF S29AL S29GL SST39VF SST38VF S29AS SST39WF 1 ~ 32 Mb 2 ~ 16 Mb 1 ~ 4 Mb 4 ~ 32 Mb 16 Mb ~ 1Gb

61189

Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC ADN2816 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Patented clock recovery architecture

CX20561

Abstract: cx20561-12z toshiba satellite c655 toshiba satellite c640 cx2056 wpc8763ldg 31TE1MB01N0 intel 4965AG g909 WPCE775
Contextual Info: 1 2 3 4 5 6 7 8 VER : E3D Description 31TE1MB0010 TE1M MB PM45/RB/MS WO CPU 31TE1MB0120 TE1M MB(PM45/MAIN/RB/HDMI/CIR)WO CPU 31TE1MB0130 TE1M MB(GM45/EXP/NO CIR/MS)WO CPU 31TE1MB0140 TE1M MB(GM45/GS/EXP/MS)WO CPU 31TE1MB0170 TE1M MB(GM45/GS/EXP/LC)WO CPU PENRYN

5802e

Abstract: 8436e ADN2816 AN-632 GR-253-CORE MO-220-VHHD-2 A6SUB
Contextual Info: Continuous Rate 12.3 Mb/s to 675 Mb/s Clock and Data Recovery IC ADN2816 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Serial data input: 12.3 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Patented clock recovery architecture

Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC ADN2816 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Patented clock recovery architecture

AN-632

Abstract: GR-253-CORE ADN2814
Contextual Info: Continuous Rate 12.3 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2814 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Serial data input: 12.3 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance

EVAL-ADN2816EB

Abstract: ADN2816 AN-632 GR-253-CORE MO-220-VHHD-2
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC ADN2816 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Patented clock recovery architecture No reference clock required

5173E

Abstract: MO-220-vhhd-2 SDH 209 ADN2816 AN-632 GR-253-CORE 32-LFCSP
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC ADN2816 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Patented clock recovery architecture No reference clock required

5173E

Abstract: AD2814 SDH 209 ADN2813 ADN2814 AN-632 GR-253-CORE BSC 23-NO 194
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2814 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 3.3 mV typical

AN-632

Abstract: GR-253-CORE ADN2813 ADN2814 760typ
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2814 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 3.3 mV typical

AD2814

Abstract: adn2814 63904 61189
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2814 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 3.3 mV typical

ADN2813

Abstract: ADN2814 AN-632 GR-253-CORE
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2814 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 3.3 mV typical

ADN2816

Abstract: AN-632 GR-253-CORE MO-220-VHHD-2 EVAL-ADN2816EBZ
Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC ADN2816 FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Patented clock recovery architecture No reference clock required

Contextual Info: Continuous Rate 10 Mb/s to 675 Mb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2814 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 10 Mb/s to 675 Mb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 3.3 mV typical

Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, multiple bank, burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multichip package Features • Multichip package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) PSRAM ■ Supply voltage

A0-A21

Abstract: M36W0R6050B1 M36W0R6050T1
Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

Numonyx

Abstract: A0-A21 M36W0R6050B1 M36W0R6050T1
Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM

numonyx

Abstract: M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h
Contextual Info: M36W0R6040T1 M36W0R604BT1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • Multi-chip package – 1 die of 64 Mbit (4 Mb x 16) Flash memory – 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM ■

PC8378E

Abstract: PC8379E PC8379 e2v GTX 120 mpc837
Contextual Info: PC8378E PowerQUICC II Pro Processor Hardware Specifications Datasheet Features • Memory – 512 MB DDR2 up to 400 MHz Data Rate • Local Bus Flash Memory – – – – • PCI – – • • • • • • • 32 MB NOR Flash 32 MB NAND Flash 4 Mb SPI Flash

sandisk microsd 2gb

Abstract: sandisk micro SD Card 2GB sandisk 4Gb micro sd Memory Stick Micro M2 SanDisk SDTNQGAMA-008G SDSDQ-002G-E12M SDCFH-004G-E12 sandisk 32GB micro sd SanDisk microSD 8gb sdsdq-2048
Contextual Info: Vrijedi od: 05.02.2009. PROIZVOD OPIS NB PREPORUČENA MPC sa PDV-om DIGITAL IMAGING PRODUCTS Secure Digital Cards SDSDB-1024-E12 SD 1024 MB SDSDB-2048-E12 SD 2048 MB Do okončanja zaliha 59 kn 62 kn SDSDB-4096-E12 SD 4096 MB 93 kn SDSDB-8192-E12 SD 8192 MB

Contextual Info: PC8379 PowerQUICC II Pro Processor Hardware Specifications Datasheet Features • Memory – 512 MB DDR2 up to 400 MHz Data Rate • Local Bus Flash Memory – – – – • PCI – – • • • • • • • 32 MB NOR Flash 32 MB NAND Flash 4 Mb SPI Flash

IEC-825

Contextual Info: DTR-xxx-3.3-SM 3.3 Volt Single Mode Transceivers 1x9 pin-out Features þ Single +3.3 V supply & LV-PECL interface þ Designed for ATM/SONET/SDH OC-1 to OC-12 (52 Mb/s, 156 Mb/s & 622 Mb/s), FDDI, Fibre Channel (266 & 531 Mb/s) þ Long Reach 1310 nm & 1550 nm

k 3199

Abstract: psd photodiode IEC-825 dtr-622
Contextual Info: DTR-xxx-SM Single Mode Transceivers 1x9 pin-out Features þ Designed for ATM/SONET/SDH OC-1 to OC-12 (52 Mb/s, 156 Mb/s & 622 Mb/s), FDDI, Fibre Channel (266 & 531 Mb/s) þ Long Reach 1310 nm & 1550 nm as well as Intermediate Reach þ Eye Safe (Class I Laser Safety)