MAXIMUM GAIN 33 AT 2.0 GHZ Search Results

Contextual Info: TGA4906-SM 4 Watt Ka-Band Power Amplifier Applications 4906 1252 M034 • Ka-Band Sat-Com • VSAT QFN 5x5 mm 32L Product Features • • • • • Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 35.5 dBm Psat Gain: 22 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical

4066 spice model

Abstract: SOT343 lna Spice Parameter, Bipolar Transistor 8948 transistor npn d 2078 marking 900
Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ

AWL6153M7UP8

Abstract: 802.11g AWL6153 F 2472
Contextual Info: AWL6153 2.4 GHz Wireless LAN Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • < 3.5% EVM at +25 dBm Output Power +5 V Supply , with 802.11g Modulation at 54 Mbps Data Rate • < 3% EVM at +21 dBm Output Power (+3.3 V Supply), with 802.11g Modulation at 54 Mbps

AWS01

Abstract: aft-186
Contextual Info: What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res D escription Pin C onfiguration • L ow C o st The AFT 186 X XX U product series offers the system designer

ATF21100-GP3

Abstract: TF2110 ATF-21100-GP1
Contextual Info: Thal HEWLETT WlHM PA C K A R D ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Chip Outline • • _ 4»3 • Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical at 4 GHz High Output Power: 23.0 dBm typical Pi dB

ATF-21100

Abstract: ATF-21100-GP1 ATF-21100-GP3 ATF21100 ATF21100-GP3 RF FET TRANSISTOR 3 GHZ atf21100 model AT-8111
Contextual Info: HEWLETT-PACKARD/ CMPNTS m blE D • H EW LETT PA C K A R D 44475Ö4 □ □□cm 2 ATF-21100 AT-8111 0.5-6 GHz Low NoiS6 Gallium Arsenide FET Features • • • T4Û ■ HPA Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

ATF-21100

Abstract: 6SS4 ATF-21100-GP1 AT-8111
Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D HEW LETT PACKARD • 4 4 4 7 5 A 4 D D D T T I E T4fl H H P A ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features • • • Chip Outline Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

Contextual Info: HEWLETT-PACKARD/ CMPNTS blE D • 4 M 4 7 SA 4 0 0 0 ti77b 1Tb ■ H P A AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor W kim H E W LE T T PACKARD 70 mil Package Features • 16.0 dBm typical Pi dB at 2.0 GHz • 11.5 dB typical Gi dB at 2.0 GHz

AT00510

Abstract: at-00510 TRANSISTOR MAC 223
Contextual Info: HEWLETT-PACKARD/ H EW LETT Whn% w 'rm Cf l PNTS PACKARD b l E I> • AT-00510 4447564 427 Up to 4 GHz General Purpose Silicon Bipolar Transistor Features • • • • • 0010473 100 mil Package 16.0 dBm typical Pi dB at 2.0 GHz 10.5 dB typical GidB at 2.0 GHz

Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

ATF-21100

Abstract: AT-8111 Avantek amplifier 8 12 GHz ATF-21100-GP1 AVANTEK transistor Avantek UA-152
Contextual Info: AVANTEK Q EOE D INC avan tek • llHllfab □ □ □ h S b G ATF-21100 AT-8111 0.5-6 GHz Low Noise Gallium Arsenide FET Features Avantek Chip Outline • • _483 p m _ • 7 Low Noise Figure: 0.9 dB typical at 4 GHz High Associated Gain: 13.0 dB typical

GHZ micro-X ceramic Package

Abstract: ATF-10736 ATF-10736-STR ATF-10736-TR1 10736
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 36 micro-X Package Features Description • High Associated Gain: 13.0 dB Typical at 4 GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor

ATF-10736

Abstract: ATF-10736-STR ATF-10736-TR1 ATF10
Contextual Info: 0.5 – 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features Description • High Associated Gain: 13.0␣ dB Typical at 4␣ GHz The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective

MAS22

Contextual Info: AT-00570 Up to 4 GHz General Purpose Silicon Bipolar Transistor ¥ n%HEWLETT mhLïiÆ PACKARD 70 mil Package Features • • • • • 16.0 dBm typical Pi dB at 2.0 GHz 11.5 dB typical Gi dB at 2.0 GHz 2.5 dB typical NFo at 2.0 GHz High Gain-Bandwidth Product: 8.0 GHz typical fT

318M

Abstract: LL1608-FH MBC13900 MBC13900T1 marking r4 SOT343 SOT343 lna
Contextual Info: Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package MBC13900T1 900 SOT-343 The MBC13900 is a high performance transistor fabricated using Motorola’s 15 GHz fτ

AT-60535

Contextual Info: A V A N T E K INC 20E D AVANTEK • UMlTbb 0QGbS13 T AT-60535 Up to 6 GHz Low Noise Silicon Bipolar Transistor Avantek 35 micro-X Package Features • • Low Bias Current Operation: Low Noise Figure: 1.8 dB typical at 2.0 GHz 2.8 d B typical at 4.0 GHz

Contextual Info: HEW LETT PACKARD A T -00 510 UP to 4 G H z G en eral P u rp o s e S ilicon B ip o la r T ra n s is to r 100 mil Package Features • 16.0 dBm typical PidB at 2.0 GHz • 10.5 dB typical Gi dB at 2.0 GHz • 2.5 dB typical NFo at 2.0 GHz • High Gain-Bandwidth Product: 8.0 GHz typical fr

AT-41435

Abstract: NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon␣ Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

ka-band amplifier

Contextual Info: TGA4906-SM 4 Watt Ka-Band Power Amplifier Applications 4906 1252 M034 Ka-Band Sat-Com VSAT QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 28 – 31 GHz Power: 36 dBm Psat Gain: 22 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.7 V Typical

AT-41410

Abstract: 41410 NF50 S21E
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features • Low Noise Figure: 1.6 dB Typical at 2.0␣ GHz 3.0 dB Typical at 4.0␣ GHz • High Associated Gain: 14.0 dB Typical at 2.0␣ GHz 10.0 dB Typical at 4.0␣ GHz • High Gain-Bandwidth

ATF-35576

Abstract: ATF-35576-TR2 ATF35576
Contextual Info: HEWLETT —PACKARD/ CMPNTS blE D H EW LETT wLeA PACKARD • 4 4 4 7 5 A 4 □ D D tìeì4fl QT3 H H P A ATF-35576 2-18 GHz Low Noise Pseudomorphic HEMT Features 7 6 Package • PHEMT Technology • High Gain at Moderate Noise Figure: G = 12 dB Typ, NF = 2.0 dB Max @ 12 GHz

AT-41435

Abstract: GA1020 AT41435 NF50 S21E amplifier TRANSISTOR 12 GHZ
Contextual Info: Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41435 Features • Low Noise Figure: 1.7 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz • High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz • High Gain-Bandwidth

Contextual Info: CHA4861-QGG 6-11 GHz Variable Gain Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA4861-QGG is a variable gain broadband four stage monolithic amplifier. It is designed for a wide range of applications, typically commercial

at-00570

Abstract: transistor A495 AT00570 amplifier TRANSISTOR 12 GHZ a495 transistor
Contextual Info: HEWLETT-PACKARD/ CMPNTS Wkim H E W L E T T ^.tiM P A C K A R D blE ]> • 44M75A4 □00li77b 1Tb ■ HPA AT-00570 Up to 4 GHz G eneral P urp o se S ilic o n B ip o la r T ra n s is to r 70 mil Package Features • • • • • 16.0 dBm typical Pi dB at 2.0 GHz