MAX 797 DATASHEET Search Results

TRANSISTOR 58050

Abstract: 58050 transistor
Contextual Info: Philips Components Datasheet status Product specification date of issue April 1991 BF747 N P N 1 GHz wideband transistor FEATURES QUICK REFERENCE DATA • Stable oscillator operation • High current gain • Good thermal stability. SYMBOL DESCRIPTION The BF747 is a low cost NPN

Contextual Info: Versatile Filtered Power Entry Module IEC Inlet Filters FN 390 Rated currents up to 10 A For one or two fuses Approvals Fuses Ø 6.3 x 32 mm or Ø 5 x 20 mm 2-pole rocker switch Voltage selector Optional earth line choke E type The FN 390 power entry module combines an IEC

Contextual Info: Versatile Filtered Power Entry Module IEC Inlet Filters FN 390 Rated currents up to 10 A For one or two fuses Approvals Fuses Ø 6.3 x 32 mm or Ø 5 x 20 mm 2-pole rocker switch Voltage selector Optional earth line choke E type The FN 390 power entry module combines an IEC

Contextual Info: High Performance IEC Inlet Filter IEC Inlet Filters FN 9246 Rated currents up to 20 A Optional medical versions B type Approvals Rear mounting Excellant attenuation in the lower frequency range The FN 9246 IEC inlet filter combines an IEC inlet and mains filter with excellent filter attenuation in a small

Contextual Info: High Performance IEC Inlet Filter IEC Inlet Filters FN 9246 Rated currents up to 20 A Optional medical versions B type Approvals Rear mounting Excellant attenuation in the lower frequency range The FN 9246 IEC inlet filter combines an IEC inlet and mains filter with excellent filter attenuation in a small

ED 89A diode

Abstract: diode sg 89a
Contextual Info: SKS B2 120 GDD 69/11 - A11 MA PB Absolute maximum ratings 1 Symbol IIN/OUT MAX VIN/OUT MAX VBUS MAX FIN/OUT MAX FSW IN/OUT MAX Conditions Maximum permanent input/output current Maximum output voltage Maximum DC Bus voltage Inverter Output frequency Maximum switching frequency

Contextual Info: HM 65798 DATASHEET 64 K X 4 HIGH SPEED CMOS SRAM FEATURES 300 MILS WIDTH PACKAGE FAST ACCESS TIME COMMERCIAL/INDUSTRIAL: 20/25/35/45/55 ns max MILITARY : 25/35/45/55 ns (max) LOW POWER CONSUMPTION ACTIVE: 770 mW STANDBY: 220 mW WIDE TEMPERATURE RANGE : - 55”C TO + 125‘C

fdb fairchild

Abstract: FDB06AN08A1 FDI06AN08A1 FDP06AN08A1 TB334 013D3
Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet P rel imin ary In for mat ion [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level

Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet Preliminary Information itle UF7 3P F76 D3 April 2001 75V, 0.0063 Ohm, N-Channel, Logic Level UltraFET Trench Power MOSFET The FDB06AN08A1, FDI06AN8A1, and FDP06AN08A1 devices are manufactured using Fairchild Semiconductor’s

74718

Abstract: NTCLE203E3302SB NTCLE203 IEC 62056 064506 01747 NTCLE203E3103SB0 NTCLE203E3...SB0
Contextual Info: NTCLE203E3.SB0 Vishay BCcomponents NTC Thermistors, 2-Point Radial Leaded, Automotive Grade FEATURES • High accuracy over a wide temperature range • High stability over a long life • Exceptional thermal performance shock withstanding • AEC-Q200 qualified

Aimtec

Abstract: 051E
Contextual Info: Series AMLD-IZ Up to 1200mA | LED Driver FEATURES: • • • • • • • • High Power LED Driver Wide 7:1 Input Voltage Range Remote Control Function 24 Pin DIP Package Constant Output Current High Efficiency (Up to 96%) Dimming Function (0 – 100%)

Contextual Info: Series AMLD-IZ Up to 1200mA | LED Driver FEATURES: • • • • • • • • High Power LED Driver Wide 7:1 Input Voltage Range Remote Control Function 24 Pin DIP Package Constant Output Current High Efficiency (Up to 96%) Dimming Function (0 – 100%)

Contextual Info: Series AMLD-IZ Up to 1200mA | LED Driver FEATURES: • • • • • • • • High Power LED Driver Wide 7:1 Input Voltage Range Remote Control Function 24 Pin DIP Package Constant Output Current High Efficiency (Up to 96%) Dimming Function (0 – 100%)

SN-74LS153N

Abstract: SN74LS153N SN74LS153N texas
Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 26-Sep-2005 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Eco Plan (2) Qty Lead/Ball Finish MSL Peak Temp (3) 76011012A ACTIVE LCCC FK 20 1 TBD Call TI Level-NC-NC-NC 7601101EA

110VDC LED pilot lamp

Abstract: potter KH tyco kh relay KHAU-17D11-24 KH potter brumfield KHU-17D12-24 5-1393122-5 LR15734 relay 10HP KHAU-17D
Contextual Info: General Purpose Relays Industrial Relays Potter & Brumfield KHA Series Panel Plug-in Relay n Compact package Two and four pole Form C contact arrangements n Polycarbonate or nylon dust cover n Various mounting configurations n Indicator lamp and push-to-reset options available

75639s

Abstract: 75639p AN7254 KP56 75639G HUF75639P3 HUF75639S3ST
Contextual Info: HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Data Sheet 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 39G UF75 9P3, UF75 9S3 bt A, 0V, 25 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This

Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Module Datasheet.

N310AS

Abstract: ISL9N310AP3 ISL9N310AS3 ISL9N310AS3ST M028
Contextual Info: ISL9N310AP3/ISL9N310AS3ST/ISL9N310AS3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

MOSFET 640N

Abstract: IRF640NS irf640* spice irf640n circuit using irf640n
Contextual Info: IRF640N/IRF640NS/IRF640NL N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER

ISL 2651

Abstract: 630n
Contextual Info: IRF630N/IRF630NS/IRF630NL N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER

B6CI

Contextual Info: SKS B2 100 GD 69/11 - MA PB Absolute maximum ratings 1 Symbol IOUT MAX IIN MAX Conditions Maximum permanent output current Maximum permanent input current VOUT MAX VBUS MAX FOUT MAX FSW MAX Maximum output voltage Maximum DC Bus voltage Inverter output frequency

Contextual Info: Click on Series name for product info on aimtec.com Series AMLD-IZ Up to 2000mA | LED Driver FEATURES: • • • • High Power LED Driver Wide 7:1 Input Voltage Range Remote Control Function 24 Pin DIP Package Models Single output Model Input Voltage (Vdc)

FAIRCHILD to220ab package

Abstract: RHRP640CC RHRP650CC RHRP660CC TB334
Contextual Info: RHRP640CC, RHRP650CC, RHRP660CC January 1998 Title HRP 0CC 4464 6A, 400V - 600V Hyperfast Dual Diodes Features RHRP640CC, RHRP650CC and RHRP660CC are hyperfast dual diodes with soft recovery characteristics t rr < 30ns . They have half the recovery time of ultrafast diodes and are

Contextual Info: ISL9K860P3 Data Sheet FINAL DRAFT Title URP 60 bt A, 0V rafa ode) utho eyrds ter- ts, ctirs, ft xxxx Features The ISL9K860P3 is a Stealth dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse