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FDB06AN08A1 Datasheets (1)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDB06AN08A1		Fairchild Semiconductor	75V, 0.0063 Ohm, N-Channel, UltraFET Trench Power MOSFET	Original	PDF	120.24KB	6

FDB06AN08A1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
fdb fairchild Abstract: FDB06AN08A1 FDI06AN08A1 FDP06AN08A1 TB334 013D3 Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet P rel imin ary In for mat ion [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level	Original	fdb06an08a1 fdi06an08a1 fdp06an08a1 6013p +5huf76 013d3 fdi06an8a1 fdb fairchild tb334	PDF
Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet Preliminary Information itle UF7 3P F76 D3 April 2001 75V, 0.0063 Ohm, N-Channel, Logic Level UltraFET Trench Power MOSFET The FDB06AN08A1, FDI06AN8A1, and FDP06AN08A1 devices are manufactured using Fairchild Semiconductor’s	Original	fdb06an08a1 fdi06an08a1 fdp06an08a1 fdi06an8a1 +2o-263 o-262	PDF

Catalog Datasheet

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fdb fairchild

Abstract: FDB06AN08A1 FDI06AN08A1 FDP06AN08A1 TB334 013D3
Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet P rel imin ary In for mat ion [ /Title HUF7 6013P 3, HUF76 013D3 S /Subject (20A, 20V, 0.022 Ohm, NChannel, Logic Level Power MOSFETs) /Autho r () /Keywords (Intersil, Semiconductor, NChannel, Logic Level

Original

fdb06an08a1 fdi06an08a1 fdp06an08a1 6013p +5

PDF

Contextual Info: FDB06AN08A1, FDI06AN08A1, FDP06AN08A1 Data Sheet Preliminary Information itle UF7 3P F76 D3 April 2001 75V, 0.0063 Ohm, N-Channel, Logic Level UltraFET Trench Power MOSFET The FDB06AN08A1, FDI06AN8A1, and FDP06AN08A1 devices are manufactured using Fairchild Semiconductor’s

Original

fdb06an08a1 fdi06an08a1 fdp06an08a1 fdi06an8a1 +2

PDF