MAX 1532 Search Results

5M1270

Abstract: 5m240 5M1270Z 5M80 5M40 Altera MAX V 5M40Z 5M160Z 5M240Z 5M2210Z
Contextual Info: Section II. System Integration in MAX V Devices This section provides information about system integration in MAX V devices. This section includes the following chapters: May 2011 • Chapter 4, Hot Socketing and Power-On Reset in MAX V Devices ■ Chapter 5, Using MAX V Devices in Multi-Voltage Systems

Contextual Info: 153-26 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)260 V(BR)CBO (V)285 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 153-20 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)225 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 153-24 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240 V(BR)CBO (V)265 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RCH8011

Abstract: RCH8011B
Contextual Info: Power Inductor< PIN Type : RCH Series> Type: RCH8011, RCH8011B ◆ Product Description ・8.3mm Max. φ RCH8011 , 8.8mm Max. φ(RCH8011B), 10.8mm Max. Height. ・Inductance range: 10 H～1.0mH(RCH8011), 1.0μH～8.2mH(RCH8011B) ・Rated current range: 0.47～4.1A(RCH8011), 5.0A～9.5A(RCH8011B)

RCH8011

Abstract: RCH8011B
Contextual Info: Power Inductor< PIN Type : RCH Series> Type: RCH8011, RCH8011B ◆ Product Description ・8.3mm Max. φ RCH8011 , 8.8mm Max. φ(RCH8011B), 10.8mm Max. Height. ・Inductance range: 10 H～1.0mH(RCH8011), 1.0μH～8.2μH(RCH8011B) ・Rated current range: 0.47～4.1A(RCH8011), 5.0A～9.5A(RCH8011B)

CX240D5

Abstract: CX380D5 CXE240D5 CXE380D5 MAX 1532
Contextual Info: EUROPE Leistungs-Hybridrelais Serie CX Vorteile: Eingangsspezifikationen Eingangsspannungsbereich Typischer Eingangsstrom* Min. Abschaltspannung Ausgangsspezifikationen Lastspannungsbereich Spitzensperrspannung Stoßstrom 1 Zyklus Max I2t Max. Laststrombereich

PF240D25

Abstract: THYRISTOR PFE380D25 PF380D25 thyristoren PFE240D25
Contextual Info: EUROPE Hochleistungs-Hybridrelais Serie PF Vorteile: Eingangsspezifikationen Eingangsspannungsbereich Typischer Eingangsstrom* Min. Abschaltspannung Ausgangsspezifikationen Lastspannungsbereich Spitzensperrspannung Stoßstrom 1 Zyklus Max I2t Max. Laststrombereich

EPM7032AE

Abstract: EPM7064AE EPM7128A EPM7128AE EPM7256A JESD-71
Contextual Info: MAX 7000A Includes MAX 7000AE Programmable Logic Device October 2001, ver. 4.1 Data Sheet • Features. ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

source code for eeprom 24LC

Abstract: atmel 93c66A S93C56 BR9080AF-W i2c software program at24c04 24C02B 25LC080 atmel 24c02a S-93C56B stmicroelectronics "serial eeprom"
Contextual Info: Section III. User Flash Memory This section provides information on the user flash memory UFM block in MAX II devices. This section includes the following chapters: • Chapter 9, Using User Flash Memory in MAX II Devices ■ Chapter 10, Replacing Serial EEPROMs with MAX II User Flash Memory

MP2144

Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

EMP7064

Abstract: EMP7512 EMP7064B
Contextual Info: MAX 7000B Programmable Logic Device June 2003, ver. 3.3 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V

Contextual Info: MAX 7000B Programmable Logic Device June 2003, ver. 3.3 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V

EPM7032B

Abstract: EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71
Contextual Info: MAX 7000B Programmable Logic Device April 2001, ver. 2.3 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V

MAX V

Abstract: eQFP 64 footprint 5M40Z 5M1270Z eQFP 144 footprint 5M570Z 5m240zt144 5M80Z 5M240Z Altera MAX V
Contextual Info: MAX V Device Handbook MAX V Device Handbook 101 Innovation Drive San Jose, CA 95134 www.altera.com Subscribe 2011 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat. & Tm. Off. and/or trademarks of Altera Corporation in the U.S. and other countries. All other trademarks and service marks are the property of their respective

Contextual Info: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.

Contextual Info: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.

EMP7064

Abstract: EMP7032 EMP7064B Altera emp7064 EMP7128 EMP7032B EPM7032B EPM7064B EPM7128B EPM7256B
Contextual Info: MAX 7000B Programmable Logic Device September 2003, ver. 3.4 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

EMP7064

Abstract: Altera emp7064 emp7032 PLD eeprom programmer schematic EMP7128 22V10s
Contextual Info: MAX 7000B Programmable Logic Device September 2003, ver. 3.4 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

EMP7064

Abstract: EMP7032 EMP7128 EMP7512 EMP7032B EMP7064B EPM7128bti
Contextual Info: MAX 7000B Programmable Logic Device September 2005, ver. 3.5 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

Contextual Info: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter

EMP7064

Abstract: EMP7064B EMP7032 EMP7032B Altera emp7064 EPM7032B EPM7064B EPM7128B EPM7256B EPM7512B
Contextual Info: MAX 7000B Programmable Logic Device September 2005, ver. 3.5 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)

Contextual Info: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.

EPM7032B

Abstract: EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71
Contextual Info: MAX 7000B Programmable Logic Device October 2001, ver. 3.1 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) –