TRF7003
Abstract: TRF8010
Contextual Info: Amplifier FAQ’s QUESTION: Why do the amplifiers require external matching? ANSWER: External matching optimizes the overall device performance. Support components capacitors and inductors Q-values are much higher in off-chip form and thereby provide low loss, highly tuned matching circuits. External matching also provides
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C2766G
Abstract: UPC2766GR UPC2766GR-E1
Contextual Info: WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS UPC2766GR FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical Phase Matching: ±0.3° (driven in phase)
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C2766G
Abstract: UPC2766GR UPC2766GR-E1
Contextual Info: WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS UPC2766GR FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical Phase Matching: ±0.3° (driven in phase)
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Contextual Info: WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS FEATURES FUNCTIONAL BLOCK DIAGRAM • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: +0.3 dB Typical Phase Matching: ±0.3° (driven in phase)
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upc2766grupc2766gr-e12500/reel |
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BLS2731-10
Abstract: AN98029 broadband impedance transformation
Contextual Info: APPLICATION NOTE Broadband impedance matching for S-Band Transistors AN98029 Philips Semiconductors Broadband impedance matching for S-Band Transistors CONTENTS 1 INTRODUCTION 2 DESIGN METHOD 3 IMPEDANCE MEASUREMENT 4 FITTING DATA TO MODEL 5 LUMPED ELEMENT INPUT AND OUTPUT
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an98029sca57bls2731-10broadband impedance transformation |
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4120PL
Abstract: TEKELEC 302 BLV958FL sot391 BLV958 A11Z SQL5 Tekelec BLV95 68479 wire
Contextual Info: Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching, high gain and efficiency NPN silicon planar epitaxial transistors primarily intended for common emitter class-AB operation. The transistors
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blv958blv958flot391aot391b+10-sot391a-sot3914120pltekelec 302sot391a11zsql5tekelecblv9568479 wire
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smd transistor l32
Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
Contextual Info: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter
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blv945bot3247110fl2fcocn23ia+10smd transistor l32smd transistor sastransistor smd t30sas smd transistorsmd l32 transistorsmd l31smd capacitor l29smd transistor t30smd electrolytic capacitorsmd capacitor l27
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BLV958
Abstract: BLV958FL 101 Ceramic Disc Capacitors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1997 Oct 15 2000 Jan 12 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,
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blv958blv958flot391aot391b+2125002/04/pp12101 ceramic disc capacitors
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BLV958
Abstract: BLV958FL
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 2000 Jan 12 2000 Nov 02 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,
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iw16
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV958; BLV958FL UHF power transistors Product specification Supersedes data of 1996 Feb 12 1997 Oct 15 Philips Semiconductors Product specification UHF power transistors BLV958; BLV958FL FEATURES DESCRIPTION • Internal input and output matching for easy matching,
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2N6083
Abstract: AN721/D Diode jx4 2N5642 AN721 MTT-19 Motorola 2N6083 motorola an721 application 2n6083 an721 AN282A
Contextual Info: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer
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an721/dan7212n6083diode jx4+62n5642mtt-19motorola 2n6083motorola an721 application2n6083 an721an282a
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AN721
Abstract: EE3990 118-136 mhz AN282A Design of H. F. Wideband Power Transformers 2N6083 broadband impedance transformation 2N5642 shunt reactor Motorola 2N6083
Contextual Info: Order this document by AN721/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN721 IMPEDANCE MATCHING NETWORKS APPLIED TO RF POWER TRANSISTORS Prepared by: B. Becciolini 1. INTRODUCTION LS Some graphic and numerical methods of impedance matching will be reviewed here. The examples given will refer
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an721/dan721ee3990118-136 mhz+7an282adesign of h. f. wideband power transformers2n6083broadband impedance transformation2n5642shunt reactormotorola 2n6083
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ta8172
Abstract: t 3866 transistor equivalent transistor uhf circulator t 3866 power transistor t 3866 transistor 5257 transistor rca rf power transistor 30w 420 NPN Silicon RF Transistor Allen-Bradley 1397 Allen-Bradley resistors
Contextual Info: File No. 656. RF Power Tran sisto rs Solid State Division 4 .n a 7 fì 40971 30-W and 45-W, 12.5-V, UHF Mobile, Silicon N-P-N Overlay Transistors With Internally Mounted Input-Matching Networks Features: • Internally mounted input " T " matching networks
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rcahf-40ta8172t 3866 transistor equivalent transistoruhf circulator+7t 3866 power transistort 3866 transistor5257 transistorrca rf power transistor 30w420 npn silicon rf transistorallen-bradley 1397allen-bradley resistors
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Contextual Info: _ Si-Cr THIN FILM RESISTORS VALUES OF 10Q to 100Kfi, LASER TRIMMABLE * FEATURES Wide Range of Resistor Values Negligible Voltage Dependence Very Low Temperature Coefficient Very High Breakdown Voltage Good Matching Characteristics Very Low Temperature Drift Matching
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100kfit-42-21 |
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c39 transistor
Abstract: transistor c36 c38 transistor Philips 2222-581 BLV950 PHILIPS BLV950 philips resistor 2322 156 Philips 2222 052 transistor c37
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification File under Discrete Semiconductors, SC08b 1996 Jan 26 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES DESCRIPTION • Internal input and output matching for easy matching,
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4422 mosfet
Abstract: MOSFET 4420 Matching MOSFET Drivers to MOSFETs parallel mosfet 4469 mosfet use of zener diode 4420 mosfet mosfet 4468 4422 dual mosfet irf4501
Contextual Info: APPLICATION NOTE 30 MATCHING MOSFET DRIVERS TO MOSFETs MATCHING MOSFET DRIVERS TO MOSFETs AN-30 INTRODUCTION V TelCom offers many sizes of MOSFET drivers. This allows the designer to best match the switching performance of the driver/MOSFET to the application.
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an-30tc44244422 mosfetmosfet 4420+8matching mosfet drivers to mosfetsparallel mosfet4469 mosfetuse of zener diode4420 mosfetmosfet 44684422 dual mosfetirf4501
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Contextual Info: AN732 Si4438 TX M ATCHING 1. Introduction This application note provides a description of the matching of the TX Power Amplifier PA on the Si4438 RFIC working in the 470–510 MHz Chinese AMR band. Specifically, this document does not address the matching
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BLV947
Abstract: uhf npn 200w cw transistor 200w
Contextual Info: Philips Semiconductors bb53^31 OOEISbS TS5 APX Preliminary specification BLV947 UHF push-pull power transistor •N AMER PHILIPS/DISCRETE bTE D QUICK REFERENCE DATA FEATURES • Double input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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rf based helicopter
Abstract: RF basics TV 2 way passive splitter circuit diagram 2 way antenna splitter, circuit diagram
Contextual Info: Non-PLL RF Basics Presented by: Dean Banerjee, Wireless Applications Engineer Non-PLL RF Basics • Introduction – Wireless Applications – Basic RF Signal and Modulation • Basic RF Performance – Power and Matching Parameters • Power/Gain • Impedance Matching Issues
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rf based helicopterrf basicstv 2 way passive splitter circuit diagram2 way antenna splitter, circuit diagram |
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Philips 2222-581
Abstract: BLV950 St 1702 TRANSISTOR ferroxcube 4322
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV950 UHF push-pull power transistor Product specification Supersedes data of 1996 Jan 26 1997 Oct 27 Philips Semiconductors Product specification UHF push-pull power transistor BLV950 FEATURES PINNING - SOT262A2 • Internal input and output matching for easy matching,
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Contextual Info: , L/nc, TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UHF push-pull power transistor FEATURES • Double Input and output matching for easy matching and high gain • Poly-silicon emitter-ballasting
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MRC106
Abstract: BCM7 G37 IC 2222-581 Philips 2222-581 BLV945A C360 transistor c36 ferroxcube 4322 2322 151
Contextual Info: Philips Semiconductors ^53^31 0 Q 2 CI 5 4 ,1 ?G2 MB A P X Product specification BLV945A UHF push-pull power transistor FEATURES • Double internal input matching for easy matching and high gain • Emitter-ballasting resistors for an optimum temperature profile
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0qsci54tblv945aot324mrc106+8bcm7g37 ic2222-581philips 2222-581c360transistor c36ferroxcube 43222322 151
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2766G
Contextual Info: PRELIMINARY DATA SHEET WIDEBAND IQ DEMODULATOR FOR DIGITAL RECEIVERS U PC 2766G R FUNCTIONAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION RF & LO DC to 1 GHz IF IQ DC to 100 MHz • WIDEBAND IQ PHASE AND AMPLITUDE MATCHING Amplitude Matching: ±0.3 dB Typical
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2766gupc2766grupc2766gr-e12500/reel |
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c38 transistor
Abstract: PHILIPS 4330 030 36300 transistor tt 2222 c39 transistor L33 TRANSISTOR TT 2222 npn 4330 030 36 ferroxcube FERROXCUBE 4330 b3171 transistor c37
Contextual Info: t m 7110821, D0b31t,4 m BIPHIN Philips Semiconductors_ _ . . bSE T> PHILIPS INTERNATIONAL UHF push-pull power transistor FEATURES • Double input and output matching for easy matching and high gain QUICK REFERENCE DATA RF performance at Th = 25 °C in a common emitter test circuit.
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d0b31tblv948ot262a2mrc117+112x100c38 transistorphilips 4330 030 36300transistor tt 2222c39 transistorl33 transistortt 2222 npn4330 030 36 ferroxcubeferroxcube 4330b3171transistor c37
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