MASK ROM 4M Search Results

NSI150

Contextual Info: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

Contextual Info: SAMSUNG ELECTRONICS INC b?E i • V^bMlME OD lb'nS 3b7 «SPICK KM23C4001B G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using

MX23L3254MC-20G

Abstract: 8096 microcontroller features MX23L3254 MX23L3254MC-20 MX23L3254MI-20G ST10
Contextual Info: MX23L3254 32M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L3254 is a 32Mbit 4M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 32Mbit of Mask ROM 2.7 to 3.6V Single Supply Voltage

KM23C4000AG

Contextual Info: KM23C4000A CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M ^ JC 40U U A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using silicon-gate C M OS process technology.

mb838200

Abstract: A5121
Contextual Info: August 1992 Edition 1.0A FUJITSU DATA SHEET MB98A5101X-, 5111x-, 5121x-, 5131x-, and 5141x-25 Mask ROM Memory Card IM-. 2M-. 4M-. 8M-. and 16M-BYTE The Fujitsu MB98A5101x, MB98A5111x, MB98A5121x, MB98A5131x and MB98A5141x are Mask Programmable Read Only Memory Mask ROM cards

seiko epson RAM IC MEMORY CARD "40 pin"

Abstract: mask rom MRC1281 a21 eeprom
Contextual Info: MASK ROM OUTLINE The MASK ROM IC MEMORY CARD series is made up of Masked ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. VARIATION Part Number MRC1281 ECO MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0

Contextual Info: CMOS MASK ROM KM23C32000CG 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) 1Fast access time : 100ns(Max.) 1Supply voltage : single +5V 1Current consumption Operating : 50mA(Max.)

Contextual Info: KM23C4200D CMOS MASK ROM 4M-Bit 256Kx16 CMOS MASK ROM (EPROM TYPE) GENERAL DESCRIPTION FEATURES The KM 23C4200D is a fully static m ask program m able ROM >262,144 x 16 bit organization > Fast access tim e : 80ns(M ax.) >Supply voltage : single +5V > Current consumption

KM23C4001

Contextual Info: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _jfPD23C64020 64M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 16-BIT Description The ,uPD23C64020 is a 67,108,864 bits mask-programm able ROM. The word organization is 4,194,304 words by 16 bits. The active levels of OE Output Enable Input can be selected with mask-option.

Contextual Info: Preliminary KM23V32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.)

mask rom

Contextual Info: Preliminary Information CMOS MASK ROM K3N7C4000B-DC 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 4,194,304 x 16 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 70mA(Max.)

Contextual Info: KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption

TSOP1-48

Contextual Info: Preliminary Information CMOS MASK ROM K3P7C1000B-YC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access :100ns(Max.) Page Access

Contextual Info: Preliminary Information CMOS MASK ROM K3P7C1000B-TC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access

Contextual Info: Preliminary KM23C32000C E T CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption

Contextual Info: CMOS MASK ROM KM23V32000CG 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.) • Supply voltage : 2.7V to 3.6V

Contextual Info: Preliminary Information CMOS MASK ROM K3P7C1000B-GC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access

K3N7C1000B-GC

Contextual Info: Preliminary Information CMOS MASK ROM K3N7C1000B-GC 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V

Contextual Info: KM23V32000D E TY/KM23S32000D(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2,097,152x16(word mode) • Fast access time Random Access Time 3.3V/3.0V Operation : 100ns(Max.)

Contextual Info: KM23V64205ASG CMOS MASK ROM 64M-Bit 4Mx16 /2Mx32 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304 x 16(word mode) 2,097,152 x 32(double word mode) • Fast access time Random Access/Page Access 3.3V Operation : 100/30ns(Max.)

Contextual Info: Advance Information CMOS MASK ROM KM23V64000G 64M-Bit 8Mx8 /4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 150ns(Max.)

44-PIN

Abstract: 48-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD23C32000AL 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT BYTE MODE / 2M-WORD BY 16-BIT (WORD MODE) Description The μPD23C32000AL is a 33,554,432 bits mask-programmable ROM. The word organization is selectable (BYTE