MASK ROM 4M Search Results

Contextual Info: KM23C4000H CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •

Contextual Info: KM23V32005BG CMOS MASK ROM 32M-Bit 4Mx8 /2Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 4,194,304x8(byte mode) 2 l097,1S2x16(word mode) The KM23V32005BG is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is

KM23C4000B

Abstract: mask rom
Contextual Info: CMOS MASK ROM KM23C4000B G 4M-Bit (512Kxfy CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.

KM23V4000D

Abstract: KM23V4000DG
Contextual Info: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.

Contextual Info: KM23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •

KM23C4001b

Abstract: mask rom TA-51
Contextual Info: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

mask rom

Contextual Info: KM23C64000 CMOS MASK ROM 64M-Btt 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C64000 is a fully static mask programmable ROM • • • • 4,194,304 X 16 bit organization Fast access time : 100ns(Max.) Supply voltage: single +5V

NSI150

Contextual Info: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization

Q721

Abstract: KM23V4000D KM23V4000DG
Contextual Info: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.

Contextual Info: SAMSUNG ELECTRONICS INC b?E i • V^bMlME OD lb'nS 3b7 «SPICK KM23C4001B G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using

mask rom

Abstract: mask rom 4M
Contextual Info: MASK ROM 1. OUTLINE The MASK ROM IC MEMORY CARD series is made up of Mask ROM chips. The memory sizes available are from 128K Bytes to 4M Bytes. IE series is 8 bit wide data bus. 2. VARIATION Part Number MRC128IEC0 MRC256IEC0 MRC512IEC0 MRC100IEC0 MRC200IEC0

KM23C4000

Contextual Info: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION The KM23C4000D(G) is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using

mx23l3254mc-20g

Contextual Info: MX23L3254 32M-BIT Low Voltage, Serial Mask ROM Memory with 50MHz SPI Bus Interface FEATURES DESCRIPTION • • • • The MX23L3254 is a 32Mbit 4M x 8 Serial Mask ROM accessed by a high speed SPI-compatible bus. 32Mbit of Mask ROM 3.0 to 3.6V Single Supply Voltage

23c64000

Abstract: 64M-BIT ROM 2710
Contextual Info: CMOS MASK ROM KM23C64000 64M-Bit 4Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C64000 is a fully static mask program m able ROM • • • • 4,194,304 x 16 bit organization Fast access tim e : 120ns(Max.) Supply voltage : single +5V

Contextual Info: K3N3V U 3000D-D(G)C CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The K3N3V(U)3000D-D(G)C is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.

KM23C4000AG

Contextual Info: KM23C4000A CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M ^ JC 40U U A is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 X 8 bit. It is fabricated using silicon-gate C M OS process technology.

Contextual Info: K3N3V U 3000D-D(G)C CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The K3N3V(U)3000D-D(G)C is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.

mask ROM

Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH53F4P00 4M Mask ROM Model No.: LHMD09xx Ref No.: NP 176C Issue Date: April 1997 4Mbit, Mask ROM, 5V, 120 ns, 44 SOP, LH53F4P00

mb838200

Abstract: A5121
Contextual Info: August 1992 Edition 1.0A FUJITSU DATA SHEET MB98A5101X-, 5111x-, 5121x-, 5131x-, and 5141x-25 Mask ROM Memory Card IM-. 2M-. 4M-. 8M-. and 16M-BYTE The Fujitsu MB98A5101x, MB98A5111x, MB98A5121x, MB98A5131x and MB98A5141x are Mask Programmable Read Only Memory Mask ROM cards

Contextual Info: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all

lh5s4axx

Abstract: sharp mask rom LH53F4600 lh5s4 LH5S flash memory 4m 44-pin
Contextual Info: LH53F4600 4M Mask ROM SHARP LH53F4600 • Description Flash Memory Compatible pinout 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53F4600N User’s No. : LH-5S4ZXX is a CMOS 4Mbit mask-programmable ROM organized as 524 288 X 8 bits (Byte mode) or 262 144 X 16 bits (Word mode) that can be

km23c4000

Contextual Info: CMOS MASK ROM KM23C4000 4M-Bit 512KX8 CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using siiicon-gate CMOS process technology. • • • •

uPD23C4001EJ

Abstract: UPD23C4001EJGW uPD23C4001 PD23C4001 PD23C4001EJ nec 40-pin plastic dip
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD23C4001EJ 4M-BIT MASK-PROGRAMMABLE ROM 512K-WORD BY 8-BIT Description The µPD23C4001EJ is a 4,194,304 bits 524,288 words by 8 bits mask-programmable ROM. The active levels of OE (Output Enable Input) can be selected with mask-option.