MARKING WMM Search Results

Fuji Electric SM

Contextual Info: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

Contextual Info: _ BF970 VIS HAY Vishay Telefunken Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF oscillator and mixer stages. Features • High gain • Low noise BF970 Marking: BF970 Plastic case TO 50

MT47H128M8CF-25

Abstract: 8 resistor array 10k smd 103
Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration

TRA1

Contextual Info: SCHOTTKY BARRIER DIODE EP05Q04 0.s a /40 v FEA TU RES OJEDEC SOD-123 Package oV ery Low profile 1.1mm Max o High Surge Capability o Low Thermal Resistance OUL 94, VO O Packaged in 8mm tape Device Marking ~ ~ _Month of Mfg. A=Jan. B = Feb.—L=Dec. Year of Mfg. 7=1997

Theta JC of FBGA

Abstract: 256MbDDR2
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

BT 742

Abstract: DDR2 2gb x16 industrial DDR2 x16 vm 256MB DDR 400 MT47H DDR2 SDRAM Meg x 16 x 16 banks led MR11 MT47H16M16 DDR2-400 DDR2-533
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

LAMBDA over Voltage

Abstract: CSA950 75KVA
Contextual Info: ZWD75-SERIES Dual output 51W ~ 63W DENSEI-LAMBDA Model name ZWD 75-0524 Output voltage: 0512:5V, 12V 0524' 5V 24V Name of series Output power: 75W at peak PC Board Type Power Supply • Features • ce marking (Low Voltage Directive) • • • • +5V output for logic, +12/24V output for mechanical driving

marking WMM

Abstract: WS-002
Contextual Info: RoHS COMPLIANT RS CUSTOMER: P /N : 3 0 5 -5 9 8 REV. . APPROVED REVISIONS BY: REV. DESCRIPTION A 2010±50 DATE A BLUE NOTES: 1. 2. G R N /Y E L -c BROWN - 4 - 0 y 3. Z0680140 Ü R ^ 18X 15 II^EIg Pantone 185 Ä|/Jvg MARKING: R Hfifc ! 305598 10A 250V- Power Cord

Contextual Info: 512Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H128M4 – 32 Meg x 4 x 4 banks MT47H64M8 – 16 Meg x 8 x 4 banks MT47H32M16 – 8 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • Marking • Configuration

LTF3216L

Abstract: FR90A LTF3216L-F2R4G LTF3216L-FR90G LTF3216L-F1R3G HP8719D LTF3216L-FR90gl FR90
Contextual Info: TYPE 54 Multilayer Chip Low-Pass Fitter LTF3216L-F Series 7 8tl * y r*? i I:' TYPE LTF3216L-F Series L INPUT MARKING TOKO NUMBER 2R4 ¡D IM E N S IO N S / L mm W (mm) T (mm) a (mm) b (mm) 3.2±0.3 1.6 + 0.3 1. 4 + 0.2 0.5+ 0.3 0.8 ±0.3 Top View Side View

256Mb

Abstract: DDR2-400 DDR2-533 DDR2-667 MT47H16M16 MT47H32M8 MT47H32M8BP-3
Contextual Info: 256Mb: x4, x8, x16 DDR2 SDRAM Features DDR2 SDRAM MT47H64M4 – 16 Meg x 4 x 4 banks MT47H32M8 – 8 Meg x 8 x 4 banks MT47H16M16 – 4 Meg x 16 x 4 banks Options1 Features • • • • • • • • • • • • • • • • • • Marking • Configuration

Contextual Info: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access

Contextual Info: 2Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H512M4 – 32 Meg x 4 x 8 Banks x 2 Ranks MT47H256M8 – 16 Meg x 8 x 8 Banks x 2 Ranks Features Options Marking • Configuration – 32 Meg x 4 x 8 banks x 2 ranks – 16 Meg x 8 x 8 banks x 2 ranks

u68a equivalent

Abstract: MT47H128M8HQ-3
Contextual Info: 1Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R256M4 – 32 Meg x 4 x 8 banks MT47R128M8 – 16 Meg x 8 x 8 banks MT47R64M16 – 8 Meg x 16 x 8 banks Options1 • • • • • • • • • • • • • • • • • • • Marking • Configuration

MARKING CODE EA1

Abstract: A-185 ERB93-02 T930 marking R810
Contextual Info: ERB93-02 i ,5A * ± 'J : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER • S H : : Features •te V F ■i^Tjv : Marking Low V F • X < •y ^ y ^ f c T - K d r '^ t t U j S v .' * 5 - 3 - K:H Super high speed sw itch in g . Color code : Silver High reliability by planer design.

Contextual Info: 4Gb: x4, x8 TwinDie DDR2 SDRAM Features TwinDie DDR2 SDRAM MT47H1G4 – 64 Meg x 4 x 8 Banks x 2 Ranks MT47H512M8 – 32 Meg x 8 x 8 Banks x 2 Ranks Features Options Marking • Configuration – 64 Meg x 4 x 8 banks x 2 ranks – 32 Meg x 8 x 8 banks x 2 ranks

jeida dram card 5v

Abstract: jeida dram 88 pin 88 pins dram card
Contextual Info: M I in P r iM M T16D 88C 232 2 MEG x 32, 4 MEG x 16 IC DRAM CARD ^ IC DRAM CARD 8 MEGABYTES 2 MEG x 32, 4 MEG x 16 FEATURES PIN ASSIGNMENT End View 88-Pin Card (DF-1) OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Part Number Example: MT16D88C232-6

MARKing l4T

Abstract: T460 t930 ERA91-02 mat03
Contextual Info: E R A 9 1-02 0 .5A _ • * » - * » : O u tlin e D ra w in g s LOW LOSS SUPER HIGH SPEED RECTIFIER ■ t t * : Features m f r m , 5 m m t '^ m a «m ■ ^ T jv U ltra small package. Marking Possible fo r 5m m pitch a utom atic insertion. t> ? - □ - V : Ê

CB903-4

Abstract: ML marking rft t-200
Contextual Info: CB903-4 1 OA ¡SbiS ^ I O utline D raw ings K LOW LOSS SUPER HIGH SPEED RECTIFIER -w03.0 ! L nr-MIN. 25 I 5.0 00.8 M 25m,n. • i $ f i : Features • ftV P Low V f ■ S / K ^ Marking S u p e r h ig h speed s w itc h in g . *7 - 3 - K : SH Color code : S ilver

Contextual Info: wmmt BFP181T/BFP181TW/BFP181TRW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. Features