MARKING WB1 Search Results

MARKING WB1

Abstract: marking 18T Marking W3 18T MARKING WB1 MARKING MARKING W1 Marking ON TS93XXT3 MTVA
Contextual Info: l ~ ~ TSO3XX [] PLANER & TT3XXX PLANER ~ REF417 SCREENED dB VALUE BLACK ~ d B GREEN DOT ADD .5dB . TOP SIDE BOTTOM TSO3XXW1/WB1 GREEN DOT ADDS .5 dB SCREENED dB VALUE rl ~ (WHITE) U ~ TOP SIDE BOTTOM TSO3XXW3 ~ ~ r~~~ SCREENED dB VALUE (BLACK) bzJ O ~~-

Contextual Info: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and

nitto SWT 10

Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
Contextual Info: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device

ts0505

Abstract: marking code wb1 mw 772 TS05XXW1 TS05XXW3 ts0506 TS0503 TS05 TS0518 TS0509
Contextual Info: Attenuators Introduction Features • Substrate - Alumina • Power Rating - 0.1 to 2 Watts • Frequency Range DC to 18 GHz • Tape and Reel Packaging Available • VSWR under 1.50:1 • Variety of Chip Sizes • Attenuation Values from 1 to 20 dB in 1 dB increments; consult the factory

Contextual Info: THIN FILM CHIP ATTENUATORS GENERAL INFORMATION GENERAL SPECIFICATIONS: The TS03XX and TS05XX chip attenuators consist of a thin film element on an alumina ceramic substrate with solderable terminals in two sizes. The larger TS03XX Series operates to 12.4 GHz and the

ts0505

Abstract: TS0503 TS0506 marking code wb1 TS0510 TS0504
Contextual Info: A ttenuators General Specifications Teclutologi/ TS05 M arking Code Part # dB Value TS0500 TS0501 TS0502 TS0503 TS0504 TS0505 TS0506 TS0507 TS0508 TS0509 TS0510 TS0511 TS0512 TS0513 TS0514 TS0515 TS0516 TS0517 TS0518 TS0519 TS0520 0 dB 1 dB 2 dB 3 dB 4 dB

WB1500

Abstract: 298029
Contextual Info: Intel WB1500 SDH/SONET Superscalable STM-16/STS-48 Framer Datasheet Order Number: 274011-002 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS

W1634

Contextual Info: VIDEO PATCH PANELS 149 SWITCHCRAFT, INC. 5555 N. Elston Ave. • C h ica g o , IL 60630 • 773 792-2700 • FAX: 773 792-2129 • w w w .sw itch cra ft.co m VIDEO PATCH PANELS Video Insulated Panels, Series VIP, patch 24 or 26 channels from DC to 750 MHz allows for serial digital video patching.

24C024

Abstract: WB1510 298029 RD237
Contextual Info: Intel WB1510 SDH/SONET 2 x STM-4/STS-12 or STM-1/STS-3 Framer Datasheet Order Number: 274042-003 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL ® PRODUCTS. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS

0805 capacitor 10 pf

Contextual Info: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.

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Abstract: 1au41 298029
Contextual Info: Intel WB1501 High-Density SDH/SONET STM-1/STS-3 Framing Processor Datasheet Order Number: 274015-002 October 2004 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN

RB1A

Abstract: Luxeon altilon core
Contextual Info: LUXEON Altilon Automotive Forward Lighting Source Technical Datasheet DS66 LUXEON Altilon Automotive Forward Lighting Source Introduction LUXEON® Altilon LEDs are specifically designed and tested to meet and exceed expectations for reliability, performance, and lifetime in automotive forward lighting

MRF9030NR1

Abstract: marking z17 100B470JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

SSPA ka Band

Abstract: Boeing Skynet Electronic EMC RF Labs Resistor ANIK F1 rover hughes Hybrid Couplers transformation turksat transponder
Contextual Info: Over Thirty Years Florida RF Labs / EMC Technology has been supplying RF Passive Components for space flight missions for over 30 years. We have participated in over 150 military, commercial and scientific satellite programs such as the Mars Exploration Rover. Our capabilities to

Luxeon driver schematic 20 w

Abstract: Luxeon altilon core
Contextual Info: LUXEON Altilon Automotive Forward Lighting Source Technical Datasheet DS66 LUXEON Altilon Automotive Forward Lighting Source Introduction LUXEON® Altilon LEDs are specifically designed and tested to meet and exceed expectations for reliability, performance, and lifetime in automotive forward lighting

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9045MR1 MRF9045MBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these

marking WB1 sot-23

Abstract: marking WB2 sot-23 transistor WB1
Contextual Info: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source

WB201209

Abstract: WB160808 WB160808B300 WB1005 WB160808B100 WB160808B221 WB160808B102 WB3216 WB201209F800QLT04 WB321611B310QLT60
Contextual Info: Walsin Technology Corporation Lead Free Ferrite Beads Series Customer : Approval No : 013SZ-940145 Issue Date : 2005/05/18 Customer Approval : WALSIN Technology Corp. Authorized By : Chen-yuan Su Page 1 of 19 Lead Free Ferrite Beads version 04 March 2004 Walsin Technology Corporation

marking WB1 sot-23

Abstract: marking WB2 sot-23 MARKING J3 SOT-23 CRCW08051001FKEA wb1 sot-23 ATC100B220GT500XT WB1 SOT23 22 pf capacitor datasheet ATC100B220GT500X MARKING WB1
Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

Contextual Info: Document Number: MRF9080 Rev. 8, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband

marking WB1 sot-23

Abstract: marking WB2 sot-23 ATC100B220GT500XT MRF9080 MRF9080LR3 T491D106M035AT
Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9080LR3 LIFETIME BUY Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common - source

Contextual Info: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over copper.

Contextual Info: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over phos

Contextual Info: Document 116-1 Wideband RF Transformers • • • • Surface mount and through hole versions 500 V interwinding isolation, 1/4 Watt RF input power 250 mA max current rating. For a smaller package size, see our TTWB Series Core material Ferrite Terminations RoHS compliant matte tin over nickel over copper.