MARKING W45 Search Results

marking W26 sot23

Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Contextual Info: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters

SOT-363 marking 05

Abstract: 2SC2412K W4501DW
Contextual Info: W4501DW Epitaxial Planer Transistor Silicon NPN 1 2 3 6 5 P b Lead Pb -Free 1 4 Features: 3 SOT-363(SC-88) 6 5 2 4 NPN+NPN * Both 2SC2412K Chip x 2 in a SOT-363 Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous

W45B010

Abstract: W45B010P W45B010Z
Contextual Info: Preliminary W45B010 1M x 1 SERIAL FLASH MEMORY GENERAL DESCRIPTION The W45B010 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B010. The memory is accessed for

W45B010

Abstract: W45B012 W45B012P W45B012Z
Contextual Info: Preliminary W45B012 1M x 1 SERIAL FLASH MEMORY GENERAL DESCRIPTION The W45B012 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B012. The memory is accessed for

W45B512

Abstract: W45B512P W45B512Z
Contextual Info: Preliminary W45B512 512K x 1 SERIAL FLASH GENERAL DESCRIPTION The W45B512 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 16 sectors of 4096 Bytes for the W45B512. The memory is accessed for Read or Erase/Program by the SPI bus compatible serial protocol. The bus signals are: serial data

KIC73B24

Abstract: KIC73E27T2
Contextual Info: SEMICONDUCTOR KIC73A/B/C/D/E16~50T/T2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC73A/B/C/D/E*T/T2 Series This IC is a system reset IC built in delay time circuit. KIC73 series is not required with an external capacitor, and then can use a

MARKING CODE ZAA

Abstract: 5000 volt scr MIL-A-8625 marking W36
Contextual Info: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.

Contextual Info: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.

Contextual Info: CATALOG 128_CATALOG 128.qxd 4/24/2014 10:29 AM Page 52 VectorPaktm Instrument Cases & Frame-Loc Railstm Aluminum Instrument Cases Versatile Multi-Modtm cases are ideal for small case packaging of testers, controllers and other instruments. Brushed aluminum construction provides excellent RF

marking W45

Abstract: P6650 SR2-062 diode sr45 M4211 W45-10
Contextual Info: CATALOG 126:CATALOG 126.qxd 6/27/2007 ELECTRONICS & TECHNOLOGY, INC. A FINE TECHNOLOGY GROUP 2:48 PM Page 52 VectorPaktm Instrument Cases & Frame-Loc Railstm Aluminum Instrument Cases Versatile Multi-Modtm cases are ideal for small case packaging of testers, controllers and other instruments.

marking W37

Abstract: transformer 220v 2a SMA100-300 marking W45 220V to 48V transformer transformer 220V
Contextual Info: SMA100 SERIES SURFACE MOUNT SURGE ARRESTORS FEATURES SOLID STATE SURGE ARRESTOR VOLTAGE RANGE = 200 V TO 265 V TIGHT VOLTAGE TOLERANCE FAST RESPONSE TIME VERY LOW AND STABLE LEAKAGE CURRENT REPETITIVE SURGE CAPABILITY Ipp = 100 A, 10/1000 µs FAIL-SAFE WHEN DESTROYED

marking W37

Abstract: Marking Code W45
Contextual Info: £ jJ SGS-THOMSON D glsì [llLiOT EDD(gi S M A 100 S E R IES SURFACE MOUNT SURGE ARRESTORS FEATURES • SOLID STATE SURGE ARRESTOR . VOLTAGE RANGE = 200 V TO 265 V ■ TIGHT VOLTAGE TOLERANCE ■ FAST RESPONSE TIME . VERY LOW AND STABLE LEAKAGE CURRENT ■ REPETITIVE SURGE CAPABILITY

Photodiode, 1550nm, butterfly package

Abstract: W9804 1550nm Laser Diode with butterfly pin package w7124 w3425 1550nm Laser Diode butterfly w9041 oki LOT NUMBER marking laser DFB 1550nm 20mW 10gb W3268
Contextual Info: JOG-00952 OKI Electronics Components OL5104L-20-Wnnnn Rev.1 [Feb. 2002 ] 1550nm/20mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-20-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF. 2. FEATURES • ·

w9041

Abstract: laser DFB 1550nm 20mW 10gb W9634 W6550 1550nm Laser Diode butterfly W8369 w405 W8957 1602.31 W4135
Contextual Info: Electronics Components OL5104L-20-Wnnnn ODLOL5104L-20-Wnnnn-02 Issue Date: Apr. 2002 1550nm/20mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-20-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF. 2. FEATURES

W45NM60

Abstract: STW45NM60
Contextual Info: STW45NM60 N-CHANNEL 650V @Tjmax - 0.09Ω - 45A TO-247 MDmesh MOSFET Table 1: General Features TYPE VDSS @Tjmax RDS on ID 650V < 0.11Ω 45 A STW45NM60 • ■ ■ ■ ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

W45NM50

Abstract: STW45NM50
Contextual Info: STW45NM50 N-CHANNEL 550V @ Tjmax - 0.08Ω - 45A TO-247 MDmesh MOSFET Table 1: General Features TYPE VDSS @Tjmax RDS(on) ID 550V < 0.1Ω 45 A STW45NM50 • ■ ■ ■ ■ ■ Figure 1: Package TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES

W45NM60

Abstract: STW45NM60 JESD97 650V
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

W45NM60

Abstract: w45*60 STW45NM60 JESD97
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

STW45NM60

Abstract: W45NM60 JESD97 w45*60
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

w45nm50fd

Abstract: of w45nm50fd STW45NM50FD W45NM50 JESD97 ZVS phase-shift converters
Contextual Info: STW45NM50FD N-channel 500V - 0.07Ω - 45A - TO247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STW45NM50FD 500V <0.1Ω 45A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

w45nm50fd

Abstract: data sheet of w45nm50fd STW45NM50FD w45nm50f W45NM50
Contextual Info: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

Contextual Info: STW45NM50 N-channel 550 V @ TJmax, 0.08 Ω, 45 A, TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

Contextual Info: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

Contextual Info: ELW135 ELW136 ELW4503 8 PIN DIP WIDE BODY HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C