MARKING VP215 Search Results

MARKING C3F

Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

PC2747TB

Abstract: PDC800M
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB,µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.

marking C1s

Abstract: PDC800M
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: BIPOLAR DIGITAL INTEGRATED CIRCUIT UPB1510GV 3.0 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR DBS TUNERS DESCRIPTION The UPB1510GV is a 3.0 GHz input divide by 4 prescaler IC for DBS tuner applications. This IC is suitable for use of frequency divider for PLL synthesizer block. This IC is a shrink package version of the µPB585G so that this small

TFL0816-2N7

Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.

marking g2p

Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.

marking 3f 6pin

Abstract: PC2771T marking C3f F MARKING 6PIN
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.

6-PIN marking f1

Abstract: PC2746TB F MARKING 6PIN
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC2745TB,PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC2745TB and PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile

grm39ck1r5c50

Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

371j

Contextual Info: BIPOLAR DIGITAL INTEGRATED CIRCUIT UPB1510GV 3.0 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR DBS TUNERS DESCRIPTION The UPB1510GV is a 3.0 GHz input divide by 4 prescaler IC for DBS tuner applications. This IC is suitable for use of frequency divider for PLL synthesizer block. This IC is a shrink package version of the µPB585G so that this small

MARKING G1V

Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.

marking 6b 6pin

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω

Contextual Info: DATA SHEET NEC's L-BAND 4W HIGH POWER SPDT SWITCH IC UPG2027TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: NEC's UPG2027TQ is a high power SPDT GaAs Switch IC 0.40 dB TYP. @ 1.0 GHz for digital cellular and cordless telephone applications. This 0.50 dB TYP. @ 2.0 GHz

Marking W3

Abstract: NE5511279A-A NE5511279A-T1A
Contextual Info: SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology

Contextual Info: SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology

2.45 Ghz power amplifier 45 dbm

Abstract: J842 2.45 Ghz power amplifier 30 db
Contextual Info: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our

HS350

Abstract: UPD5710TK VP215
Contextual Info: DATA SHEET NEC's WIDE BAND UPD5710TK SINGLE CONTROL CMOS SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE : 1.8 to 3.3 V 2.8 V TYP. • SINGLE SWITCH CONTROL VOLTAGE: Vcont (H) = 1.8 to 3.3 V (2.8 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPD5710TK is a wide-band single control

Chlorine free flux

Abstract: HS350 UPD5710TK VP215
Contextual Info: DATA SHEET NEC's WIDE BAND SPDT SWITCH UPD5710TK FEATURES DESCRIPTION • SUPPLY VOLTAGE : VDD = 1.8 to 3.3 V 3.0 V TYP. • SWITCH CONTROL VOLTAGE: Vcont (H) = 1.8 to 3.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPD5710TK is a wide-band CMOS MMIC

TFL0816-2N7

Abstract: TFL0816-6N8 TFL0816-8N2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

TFL0816-2N2

Abstract: TFL0816-12N TFL0816-8N2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

nec 2031

Abstract: 10-PIN HS350 UPG2031TQ UPG2031TQ-E1 VP215
Contextual Info: NEC's L-BAND SP3T SWITCH UPG2031TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz NEC's UPG2031TQ is an L-band SP3T GaAs FET switch for CDMA/PCS/GPS triple mode digital cellular telephone applications. The device can operate from 500 MHz to above 2.0

GRM39CH

Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid