MARKING U1D Search Results

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTX111T
Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name

KDS2236M

Abstract: KDS2236S 2236A
Contextual Info: KDS2236M/S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL LANAR DIODE TECHNICAL DATA AFC APPLICATION FOR FM RECEIVER. B A FEATURES ᴌHigh Q : Q=70 Min. (f=50MHz). O F ᴌLow Reverse Current : IR=100nA(Max.) (VR=4V). H G M C MAXIMUM RATING (Ta=25ᴱ)

KDV287E

Abstract: VARIABLE CAPACITANCE DIODE C25V
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV287E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE UHF SHF TUNING. FEATURES ᴌExcellent C-V Characteristics, and Small Tracking Error. ᴌUseful for Small Size Tuner. 1 A ᴌLow Series Resistance : rS=1.9ή Typ.

KDR728

Abstract: MARKING L USC diode
Contextual Info: SEMICONDUCTOR KDR728 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 2 =0.42(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL

KDV257E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV257E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES MAXIMUM RATING Ta=25ᴱ CHARACTERISTIC A 1 2 SYMBOL RATING UNIT Reverse Voltage VR 10 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150

U 126

Abstract: C25V KDV287
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV287 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE UHF SHF TUNING. L K H F ᴌExcellent C-V Characteristics, and Small Tracking Error. A ᴌLow Series Resistance : rS=1.9ή Typ. 1 E ᴌHigh Capacitance Ratio : C2V/C25V=7.6(Typ.)

kds12

Abstract: KDS120V
Contextual Info: SEMICONDUCTOR KDS120V TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES E ᴌVery Small Package : VSM. ᴌLow Forward Voltage : VF=0.92V Typ. . B ᴌFast Reverse Recovery Time : trr=1.6ns(Typ.). G D 2 : CT=2.2pF (Typ.).

KDR729

Contextual Info: SEMICONDUCTOR KDR729 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. L K A ᴌIO=200mA rectification possible. H F ᴌSmall Package : USC. 1 E ᴌLow Forward Voltage : VF 4 =0.43(Typ.) G B CATHODE MARK FEATURES 2 J D C I MAXIMUM RATING (Ta=25ᴱ)

KDR784

Contextual Info: SEMICONDUCTOR KDR784 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE LOW VOLTAGE HIGH SPEED SWITCHING. CATHODE MARK L K A ᴌLow Forward Voltage : VF 3 =0.42(Typ.) 1 E FEATURES G B H F ᴌSmall Package : USC. 2 J D C I MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC DIM

VCO FOR UHF/VHF BAND

Abstract: KDV273E
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV273E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. FEATURES 1 A ᴌLow Series Resistance : rs=0.39ή Typ. E C B CATHODE MARK ᴌHigh Capacitance Ratio : C1V/C4V =2.0(Typ.) 2 MAXIMUM RATING (Ta=25ᴱ)

KDS121V

Contextual Info: SEMICONDUCTOR KDS121V TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. E : VSM. B : VF=0.9V Typ. . : trr=1.6ns(Typ.). G D 2 : CT=0.9pF (Typ.). 1 3 K H A FEATURES ᴌVery Small Package ᴌLow Forward Voltage ᴌFast Reverse Recovery Time

KDV350E

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV350E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL

KTC3883

Contextual Info: SEMICONDUCTOR KTC3883 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. VHF BAND AMPLIFIER APPLICATION. FEATURES E B L L ᴌHigh Current : IC MAX =200mA. ᴌLow Voltage Operating. H 1 P Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage

marking f3 sot-23

Abstract: Diode SOT-23 marking J KDS193
Contextual Info: SEMICONDUCTOR KDS193 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌSmall Package : SOT-23. E B L L ᴌLow Forward Voltag : VF=0.9V Typ. . 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current

KDV258

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV258 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. L K A H F ᴌLow Series Resistance : rs=0.45ή Max. 1 E ᴌHigh Capacitance Ratio : C1V/C4V =2.0(Min.) G B CATHODE MARK FEATURES 2 J D C I

Contextual Info: SEMICONDUCTOR KDV350E TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO. FEATURES 1 A ᴌSmall Package. ESC Package E C B CATHODE MARK ᴌLow Series Resistance : rS=0.50ή(Max.) 2 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC D F SYMBOL

marking e3 sot

Abstract: Diode SOT-23 marking J KDS190
Contextual Info: SEMICONDUCTOR KDS190 TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES ᴌSmall Package : SOT-23. E B L L ᴌLow Forward Voltag : VF=0.92V Typ. . 2 A H 1 P VRM 85 V Reverse Voltage VR 80 V Maximum (Peak) Forward Current

c8v sot

Abstract: KDV152S
Contextual Info: KDV152S SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA VCO for CB, C/P PLL APPLICATION. FEATURES E B L ᴌLow Series Resistance : rS=0.3 Typ. . L 3 G H A 2 D ᴌSmall Package. 1 MAXIMUM RATING (Ta=25ᴱ) UNIT VR 15 V

KDS114E

Contextual Info: SEMICONDUCTOR KDS114E TECHNICAL DATA SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌLow Series Resistance : rS=0.5ή Typ. . E 1 A ᴌSmall Total Capacitance : CT=1.2pF(Max.). C B CATHODE MARK ᴌSmall Package. 2 D F MAXIMUM RATING (Ta=25ᴱ)

transistor ESM 30

Abstract: KDS112E
Contextual Info: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G H A 2 C 3 1 DIM A B MILLIMETERS

C10V

Abstract: KDV154
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV154 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO. CATHODE MARK SYMBOL RATING UNIT Reverse Voltage VR 20 V Junction Temperature Tj 150 ᴱ Tstg -55ᴕ150 ᴱ Storage Temperature Range

KDS112E

Abstract: transistor ESM 30
Contextual Info: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G H A 2 C 3 1 DIM A B MILLIMETERS

VCO FOR UHF/VHF BAND

Abstract: KDV273
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV273 VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE VCO FOR UHF/VHF BAND. L K A H F ᴌLow Series Resistance : rs=0.39ή Typ. 1 E ᴌHigh Capacitance Ratio : C1V/C4V =2.0(Typ.) G B CATHODE MARK FEATURES 2 J D C I

Contextual Info: SEMICONDUCTOR KDS112E TECHNICAL DATA SILICON EPITAXIAL TYPE DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES ᴌSmall Package. ᴌSmall Total Capacitance : CT=1.2pF Max. . ᴌLow Series Resistance : rS=0.6ή(Typ.). E B D G C H A 2 DIM A B 3 1 MILLIMETERS