MARKING TR SOT23-6 P MOSFET Search Results

12V 30A 3 pin mosfet

Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
Contextual Info: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

st9401

Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y
Contextual Info: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for

MOSFET P channel SOT-23

Abstract: 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS ST2301D 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23
Contextual Info: ST2301D P Channel Enhancement Mode MOSFET -2.0A DESCRIPTION The ST2301D is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.

Contextual Info: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.

MOSFET P channel SOT-23

Abstract: MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005
Contextual Info: ST2005SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

2N7002-G

Abstract: MOSFET
Contextual Info: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S Maximum Ratings (at T =25°C) A Parameter Drain-Source voltage

SMD MARKING CODE 7002

Abstract: QW-BTR12 POWER MOSFET P1 smd marking code smd diode 2n7002 marking code 2N7002-G MOSFET SMD MARKING CODE 2n7002 0-35-W Diode smd code 202 120dg
Contextual Info: MOSFET SMD Diodes Specialist 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G 0.006(0.15) 0.002(0.05) 0.044(1.10) 0.035(0.90) S 0.103(2.60) 0.086(2.20) Maximum Ratings (at TA=25°C)

Contextual Info: MOSFET 2N7002-G N-Channel RoHS Device Features SOT-23 Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) Equivalent Circuit D 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G Maximum Ratings (at T =25°C) A Value Unit VDS 60 V Drain current ID

2N7002H

Abstract: SMD MARKING CODE 7002 POWER MOSFET P1 smd marking code smd 7002 smd transistor 7002 MOSFET SMD MARKING CODE smd diode 2n7002 marking code equivalent smd mosfet 2n7002 HF smd marking NC package sot23
Contextual Info: MOSFET SMD Diodes Specialist 2N7002-HF N-Channel RoHS Device Features SOT-23 Halogen free. Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15)

2N7002-HF

Abstract: MOSFET
Contextual Info: MOSFET 2N7002-HF N-Channel RoHS Device Halogen Free SOT-23 Features -Power dissipation : 0.35W 0.119(3.00) 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G G : Gate S : Source D : Drain G S 0.083(2.10) 0.066(1.70) 0.006(0.15) 0.002(0.05) 0.044(1.10)

IRLML6346TR

Contextual Info: PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6346TRPbF Application(s) •Load/ System Switch Features and Benefits Features

Contextual Info: PD - 97535A IRLML6244TRPbF HEXFET Power MOSFET VDS 20 V VGS Max ±12 V RDS on max 21.0 m 27.0 m (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6244TRPbF Application(s) •Load/ System Switch Features and Benefits Features

irlml6346

Abstract: IRLML6346TRPBF diode sot-23 marking AG
Contextual Info: PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6346TRPbF Application(s) •Load/ System Switch Features and Benefits Features

Contextual Info: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2

IRLML6346

Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
Contextual Info: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

IRLML6346

Abstract: IRLML6244 irlml2246 IRLML6246 IRLML0060 IRLML2244 irlml0030 IRLML2060 IRFML9244 IRLML9301
Contextual Info: PD - 96309A IRLML0040TRPbF VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ HEXFET Power MOSFET V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits

IRF micro3

Abstract: IRLML9301TRPBF
Contextual Info: PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits

IRLML0040TR

Abstract: IRLML0040
Contextual Info: PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits

IRLML6346

Abstract: IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020
Contextual Info: PD - 96278B IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features

IRFML9244

Contextual Info: IRLML2803PbF l l l l l l l l l HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 30V 3 D

Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are

Contextual Info: 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301A, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, such as smart phone

Contextual Info: 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS ON , low gate charge. These devices are particularly suited for low voltage power management, and low in-line power

FMS2303

Abstract: smd mosfet POWER MOSFET P1 smd marking code SMD mosfet sot-23 MARKING code 1A
Contextual Info: Formosa MS SMD MOSFET FMS2303 List List. 1 Package outline. 2 Features. 2