MARKING TF 5 PIN Search Results

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

MC74HCT244

Contextual Info: MC74HCT244A Octal 3-State Noninverting Buffer/Line Driver/ Line Receiver with LSTTL-Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT244A is identical in pinout to the LS244. This device may be used as a level converter for interfacing TTL or NMOS

NPN Transistor 1A 800V to - 92

Abstract: transistor -25 F07
Contextual Info: TS13003MV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 800V IC 1.5A VCE SAT Features ● High Voltage ● High Speed Switching 0.8V @ IC / IB = 1A / 0.25A Block Diagram Structure ● Silicon Triple Diffused Type

Contextual Info: TSM6N50 500V N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 500 V RDS(on) (max) 1.4 Ω Qg 25 nC TO-252 (DPAK) Features Block Diagram ● Low RDS(ON) 1.4Ω (Max.)

Contextual Info: TSM60N900 600V, 4.5A, 0.9Ω N-Channel Power MOSFET ITO-220 TO-251 IPAK Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 600 V RDS(on) (max) 0.9 Ω Qg 9.7 nC TO-252 (DPAK) Block Diagram Features ● Super-Junction technology

Contextual Info: TLP700H Photocouplers GaAℓAs Infrared LED & Photo IC TLP700H 1. Applications • Transistor Inverters • Air Conditioner Inverters • MOSFET Gate Drivers • IGBT Gate Drivers • Induction Cooktop and Home Appliances 2. General The TLP700H is a photocoupler in a 6-pin SDIP package that consists of a GaAℓAs infrared light-emitting diode

transistor G11

Abstract: to-126 HIGH SPEED SWITCHING transistor g11 transistor NPN Transistor 10A 400V NPN Transistor 1A 400V to - 92 to-126 npn switching transistor 400v d 772 transistor
Contextual Info: TS13003 High Voltage NPN Transistor TO-92 TO-126 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCEO 400V BVCBO 700V IC 1.5A VCE SAT Features 1V @ IC =0.5A, IB =0.1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type

HCT245A

Abstract: mc74HCT245
Contextual Info: MC74HCT245A Octal 3-State Noninverting Bus Transceiver with LSTTL Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT245A is identical in pinout to the LS245. This device may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs.

POWER MOSFET 4600

Abstract: 1A 700V MOSFET
Contextual Info: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

TSM2NB60

Abstract: mosfet 600V 2A
Contextual Info: Preliminary TSM2NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description The TSM2NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced

Contextual Info: HD74LV2GT53A 2–channel Analog Multiplexer / Demultiplexer REJ03D0144–0200Z Previous ADE-205-697A (Z Rev.2.00 Oct.17.2003 Description The HD74LV2GT53A has 2–channel analog multiplexer / demultiplexer in an 8 pin package. Applications include signal gating, chopping, modulation, or demodulation (modem), and signal multiplexing for analog

TSM3458

Abstract: sot26 pa N-Channel mosfet sot-26
Contextual Info: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●

HCT574A

Contextual Info: MC74HCT574A Octal 3-State Noninverting D Flip-Flop with LSTTL-Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT574A is identical in pinout to the LS574. This device may be used as a level converter for interfacing TTL or NMOS outputs to High Speed CMOS inputs.

Contextual Info: TSM9435 30V P-Channel MOSFET SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY VDS V RDS(on)(mΩ) -30 Features ID (A) 60 @ VGS = 10V -5.3 90 @ VGS = 4.5V -4.2 Block Diagram ● Advance Trench Process Technology

MARKING PA TR SOT-23

Abstract: ultra low igss pA
Contextual Info: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

Contextual Info: TSM2312 20V N-Channel MOSFET SOT-23 PRODUCT SUMMARY RDS on (mΩ) VDS (V) Pin Definition: 1. Gate 2. Source 3. Drain 20 Features ID (A) 33 @ VGS = 4.5V 4.9 40 @ VGS = 2.5V 4.4 51 @ VGS = 1.8V 3.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance

AZ10E116FN

Abstract: marking D3N AZ100E116 AZ100E116FN AZ10E116 E116 MC100E116 MC10E116
Contextual Info: DATA SHEET ARIZONA MICROTEK, INC. AZ10E116 AZ100E116 Quint Differential Line Receiver FEATURES • • • • • • • 500ps Max. Propagation Delay VBB Supply Output Dedicated VCCO Pin for Each Receiver Extended 100E VEE Range of -4.2V to -5.46V 75kΩ Internal Input Pulldown Resistors

Contextual Info: MC74HC573A Octal 3-State Noninverting Transparent Latch High−Performance Silicon−Gate CMOS The MC74HC573A is identical in pinout to the LS573. The devices are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs.

HCT04AG

Abstract: LS04
Contextual Info: MC74HCT04A Hex Inverter With LSTTL−Compatible Inputs High−Performance Silicon−Gate CMOS The MC74HCT04A may be used as a level converter for interfacing TTL or NMOS outputs to High−Speed CMOS inputs. The HCT04A is identical in pinout to the LS04. http://onsemi.com

HC08AG

Abstract: NLV74HC08ADR2G NLV74HC08ADTR2G MC74HC08ANG hc08a
Contextual Info: MC74HC08A Quad 2-Input AND Gate High−Performance Silicon−Gate CMOS The MC74HC08A is identical in pinout to the LS08. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. http://onsemi.com

HC04AG

Abstract: NLV74HC04ADTR2G MC74HC0 MC74HC04ADTR2G MC74HC04AD NLV74HC0 HC04A
Contextual Info: MC74HC04A Hex Inverter High−Performance Silicon−Gate CMOS The MC74HC04A is identical in pinout to the LS04 and the MC14069. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The device consists of six three−stage inverters.

NLV74HC32

Abstract: NLV74HC32ADR2G
Contextual Info: MC74HC32A Quad 2-Input OR Gate High−Performance Silicon−Gate CMOS The MC74HC32A is identical in pinout to the LS32. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. http://onsemi.com

DIODE B12

Contextual Info: TSM4416D 30V Dual N-Channel MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY VDS V 30 Features RDS(on)(mΩ) ID (A) 15 @ VGS = 10V 11 24 @ VGS = 4.5V 10 Block Diagram ●

Contextual Info: MAX3238 3ĆV TO 5.5ĆV MULTICHANNEL RSĆ232 LINE DRIVER/RECEIVER WITH ±15ĆkV ESD HBM PROTECTION ą SLLS349J − JUNE 1999 − REVISED MARCH 2004 D RS-232 Bus-Pin ESD Protection Exceeds D D D D D D D D D D DB OR PW PACKAGE (TOP VIEW) ±15 kV Using Human-Body Model (HBM)