MARKING TD SOT323 Search Results

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package -50V 10Ω VGS = -5V SOT323 ID TA = +25°C -130mA • Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package -50V 10Ω VGS = -5V SOT323 ID TA = +25°C -130mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on) and yet maintain superior switching performance,

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 10Ω VGS = -5V SOT323 -130mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package ID TA = +25°C -50V 10Ω VGS = -5V SOT323 -130mA • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

PBSS4160U

Abstract: PBSS5160U
Contextual Info: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 August 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE 2x

Abstract: PBSS4160U PBSS5160U
Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

Contextual Info: DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance • Low Gate Threshold Voltage

n channel mosfet vds max 60v, id max 260ma

Contextual Info: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

Contextual Info: DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance  Low Gate Threshold Voltage

A1 SOT323 MOSFET P-CHANNEL

Abstract: marking G SOT323 Transistor SOT323 MOSFET P 12V P-Channel Power MOSFET AF1333P
Contextual Info: AF1333P P-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - Fast Switching Speed - Small Package Outline SOT323 The advanced power MOSFET provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

AF1332N

Contextual Info: AF1332N N-Channel Enhancement Mode Power MOSFET „ Features „ Description - Simple Gate Drive - 2KV ESD Rating Per MIL-STD-883D - Small Package Outline (SOT323) The advanced power MOSFET provides the designer with the best combination of fast switching, low

AO7400

Abstract: diode marking code 3l
Contextual Info: Sep 2002 AO7400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7400 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide

AO7401

Contextual Info: Nov 2002 AO7401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO7401 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT323 footprint. It can be used for a wide

PBSS4160U

Abstract: PBSS5160U
Contextual Info: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.

Contextual Info: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

2N7002BKW

Abstract: 2n7002bk TRANSISTOR SMD MARKING CODE 50 006-AA
Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

NX3020NAK

Contextual Info: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Contextual Info: bbS3T31 Q025T4E ObS M A R X Philips Semiconductors N AUER PHILIPS/DISCRETE Product specification b?E D NPN switching transistor PMST4401 PIN CONFIGURATION FEATURES • S-mini package • High current. DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT323

2N7002PW

Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2N7002PW

Abstract: x8 sot323
Contextual Info: 2N7002PW 60 V, 0.3 A N-channel Trench MOSFET Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

2N7002PW

Abstract: smd code marking WV transistor sc-70 marking codes SOT323 MOSFET P
Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

Contextual Info: 2N7002PW 60 V, 310 mA N-channel Trench MOSFET Rev. 02 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET