MARKING T92 6 PIN TR Search Results

13003ad

Abstract: 13003ADA
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

13003AD

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

ic 741 free

Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
Contextual Info: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE

Marking code t92

Abstract: TRANSISTOR B S MGD624
Contextual Info: Philips Semiconductors Product specification PNP switching transistor FEATURES BSR18A PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • High-speed saturated switching. DESCRIPTION

13003ADA

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high

13003CD

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

T92 DIODE

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch

617-70

Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
Contextual Info: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA

transistor C 548 B

Abstract: TRANSISTOR c 547 B transistor bc547 specifications
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * High Voltage: UTC BC546, VCEO=65V UTC BC547, VCEO=45V UTC BC548, VCEO=30V 1 TO-92  ORDERING INFORMATION Order Number Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

NTJS3157NT1G

Abstract: marking T92 SOT363 t92 surface mount t92 transistor NTJS3157N NTJS3157NT1 NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G A-7085
Contextual Info: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Contextual Info: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.

marking T92 SOT363

Abstract: Marking code t92
Contextual Info: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Contextual Info: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES

triac 600v. 1a. to 92

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UZ0103 Preliminary TRIAC 1A TRIAC  DESCRIPTION 1 The UTC UZ0103 is a 1A triac, it is suitable for general purpose AC switching applications, fan speed controllers and home appliances.  FEATURES 1 * IGT≤3mA I-II-III , IGT≤5mA (IV)

2w sot-23

Abstract: he8050 HE8550 small signal transistor HE8550L
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for

HE8050

Abstract: HE8050L HE8050L-x-AE3-R HE8050-x-AB3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for

Contextual Info: GM2950/GM2951 100mA, LOW DROPOUT VOLTAGE REGULATORS Description Features The GM2950 and GM2951 is a low power voltage regulator. This device is an excellent choice for use in battery powered application such as cordless telephone, radio control systems, and portable

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for

Contextual Info: 3-TERMINAL 100mA ADJUSTABLE REGULATOR Description Features The GM317L is an adjustable 3-terminal positive voltage regulator capable of supplying 100mA over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT131 TRIAC TRIAC LOGIC LEVEL DESCRIPTION  1 Passivated, sensitive gate triac in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to