MARKING S58 Search Results

Si2301DS

Contextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2301DS

Abstract: vishaysiliconix
Contextual Info: Si2301DS Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 RDS(ON) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2308DS

Contextual Info: Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.16 @ VGS = 10 V "2.0 0.22 @ VGS = 4.5 V "1.7 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2308DS (A8)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

SI2301DS

Contextual Info: Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V –20 rDS(on) (W) ID (A) 0.130 @ VGS = –4.5 V –2.3 0.190 @ VGS = –2.5 V –1.9 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si2308DS VISHAY Siliconix ▼ N-Channel 60-V D-S Rated MOSFET New Product PRODUCT SUM M ARY v „s (V) RDS(ON) (-3) lD (A) 0.16 @ V GS = 10 V ±2 .0 0.22 @ VGS = 4.5 V ±1 .7 60 TO-236 (SOT-23) *Marking Code A B S O L U T E M A X IM U M R A TIN G S (TA = 2 5 ° C U N LE S S O T H E R W IS E N O TED )

S19 SMA MARKING

Abstract: BL s17 S5818 S5817 S5819 marking s17 S19 MARKING
Contextual Info: BL GALAXY ELECTRICAL S5817- - -S5819 VOLTAGE RANGE: 20 - 40 V CURRENT: 1.0 A SCHOTTKY BARRIER RECTIFIER FEATURES SMA DO-214AC Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability

Contextual Info: ADVANCE INFORMATION SaRonix TCVCXO 5V, Sub-miniature SMD Technical Data S5800 Series Frequency: 13.0000 MHz Frequency Stability: vs. vs. vs. vs. temperature: ±2.5 ppm max supply voltage: ±0.3 ppm max aging: ±1 ppm max per year load: ±0.3 ppm max, CL: [10kΩ//10 pF] ±10%

S5800

Abstract: DS220
Contextual Info: ADVANCE INFORMATION SaRonix TCVCXO 5V, Sub-miniature SMD Technical Data S5800 Series Frequency: 12.8000, 13.0000, 14.4000, 19.6800 MHz Frequency Stability: vs. temperature: ±2.5 ppm max vs. supply voltage: ±0.3 ppm max vs. aging: ±1 ppm max per year ±9ppm max for 10 years

Contextual Info: SaRonix TCVCXO 5V, Sub-miniature SMD Technical Data S5800 Series Frequency: 12.8000, 13.0000, 14.4000, 19.6800 MHz Frequency Stability: vs. temperature: ±2.5 ppm max vs. supply voltage: ±0.3 ppm max vs. aging: ±1 ppm max per year ±9ppm max for 10 years

Contextual Info: R15S 0805 S-Series, Low ESR Capacitor Multi-Layer High-Q Features • Standard EIA Size: 0805 • Ultra-small 0201 package size • Capacitance Range 0.3 - 220 pF • RF Power Application • Lowest ESR in Class • Ultra-high Q performance • High Self-Resonance Frequencies

Contextual Info: Formosa MS Chip Super Fast Rectifiers Rectifier SFM51 THRU SFM58 List List. 1 Package outline. 2

sec 222M se

Abstract: sec 472m sf sec 222m sf sec+472M+sf
Contextual Info: Radial Leaded Capacitors Disc Ceramic Comfanaaiiy Coated Y Style Line to Cround Suppressor Physical Dielectric Material Electrode Material Termination Material Enclosure Test Classification • • • • ceramic silver Tinned copper leads Blue, flame retardant UL94VO

Marking S58

Abstract: S58E 222 500V
Contextual Info: E-SERIES POWER Q CAPACITORS The E-Series was developed for HF to UHF frequency communication, transmission and specialized applications military, civil, medical, etc. where low loss, high current, high voltage capabilities are required. The high purity Type 1 dielectric

222 500V

Contextual Info: E-SERIES POWER Q CAPACITORS The E-Series was developed for HF to UHF frequency communication, transmission and specialized applications military, civil, medical, etc. where low loss, high current, and high voltage capabilities are required. The high purity Type 1 dielectric material and special electrode construction make them

diode s526

Abstract: S514 S088 S57A S563 S58C S513 marking S063 S0B4 S571
Contextual Info: SMAJ 5.0 ~ 170A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 200 Volts PPK : 400 Watts SMA DO-214AC FEATURES : 5.0 ± 0.15 4.5 ± 0.15 1.1 ± 0.3 * 400W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less

1000V

Contextual Info: MULTI-LAYER HIGH-Q CAPACITORS These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.

Contextual Info: SMAJ 5.0 ~ 188A SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage : 5.0 to 188V SMA DO-214AC Peak Pulse Power : 400 W * 400W surge capability at 1ms * Optimized for LAN protection applications * Excellent clamping capability * Low zener impedance

2450BM15A0002

Abstract: 5400BL15B100 2450BM14A0002 microwave product 2450AT42A100 STLC2690 inductor marking Johanson Technology 2450FB15L0001 bluetooth BC05 5400BL15B050
Contextual Info: CH EA ce /R lian HSmp Ro Co High Frequency Ceramic Solutions Antennas 88 MHz-10 GHz Baluns Capacitors (Hi Q, Low Loss) Chipset-Specific Impedance Matched Balun-Filters Couplers Diplexers Filters (Band-Pass, Low-Pass, etc) Inductors (Wirewound & Monolithic)

S42E

Abstract: R03S S48E 7200 b
Contextual Info: Multi-Layer High-Q Capacitors These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.

2525-size

Contextual Info: Multi-Layer High-Q Capacitors These lines of multilayer capacitors have been developed for High-Q and microwave applications. • The S-Series R03S, R07S, R14S, R15S capacitors give an ultra-high Q performance, and exhibit NP0 temperature characteristics.

EC2 WS-501

Abstract: WS-1080 ws353 WS-1070 WS-2028 WS-516 WS-3507 WS-3510 WS-3570 WS-20130
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT SIVE DELAY LINE J # # # # # # Analog input and output D elays stable and precise 3-pin Wee S IP package .1 8 0 high Available in delays from 1ns to 2 5 0 n s Precise, fixed delay Available in im pedances of 5 0 , 1 0 0 , 2 0 0 ,

S5007

Abstract: S5008 S5006 WS-518 S-5028 WS353 WS-3522 s20230 S10120 S3505
Contextual Info: lowprofile Wee SIP LUMPED CONSTANT PASSIVE DELAY LINE J # Analog input and output # Delays stable and precise use in providing the required delay timing functions necessary in radar, computer, communication, testing and instrument applica­ tions. # 3-pin Wee SIP package .1 8 0 high

Contextual Info: 62 7  BFU580Q NPN wideband silicon RF transistor Rev. 1 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, medium power applications in a plastic, 3-pin SOT89 package. The BFU580Q is part of the BFU5 family of transistors, suitable for small signal to medium

2n2 j100

Contextual Info: CH EA ce /R lian on iti HSmp Ro Co Ed 12 20 High Frequency Ceramic Solutions Antennas 88 MHz-10 GHz Baluns Capacitors (Hi Q, Low Loss) Chipset-Specific Impedance Matched Balun-Filters Couplers Diplexers Filters (Band-Pass, Low-Pass, etc) Inductors (Wirewound & Monolithic)