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    MARKING S16 Search Results

    MARKING S16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2910/BQA
    Rochester Electronics LLC 2910 - Microprogram Controller - Dual marked (7801701QA) PDF Buy
    MQ80C186-12/BYA
    Rochester Electronics LLC 80C186 - Microprocessor, 16-Bit -Dual marked (5962-8850102YA) PDF Buy
    54L04/BDA
    Rochester Electronics LLC 54L04 - Hex Inverter - Dual marked (M38510/02005BDA) PDF Buy
    9936/BCA
    Rochester Electronics LLC 9936 - Hex Inverter - Dual marked (M38510/03003BCA) PDF Buy
    54AC86/SDA-R
    Rochester Electronics LLC 54AC86/SDA-R - Dual marked (M38510R75202SDA) PDF Buy

    MARKING S16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


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    b3-b3715b3715-x-x-7600transistor 131-6 bj 946transistor bc 564+8transistor bc 949 datenblatttransistor bc 545marking code ags bsp 2000siemens datenbuchbft99mmic smd amplifier marking code 19stransistor smd marking code bc rudiode smd marking 22-16 PDF

    1PS89SS04

    Abstract: 1PS89SS05 1PS89SS06
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 1PS89SS04/05/06 High-speed double diodes Preliminary specification 1998 Oct 30 Philips Semiconductors Preliminary specification High-speed double diodes 1PS89SS04/05/06 MARKING FEATURES • Improved power dissipation in


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    m3d4251ps89ss04/05/061ps89ss041ps89ss05+31ps89ss061ps89sssca60 PDF

    CH-8050

    Abstract: dli personal line IEEE695 R3000 R3051 R3052 R3081 R4000 R4400 R4700
    Contextual Info: Logic Analyzers DLI Personal Line Flexible Logic Analyzer Family for the Windows Operating System Features ❏ Disassemblers without the need of preprocessor hardware for reverse assembly of processor-code with detection and marking of jumps and non executed instructions.


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    ca777-9842171stch-8050dli personal line+8ieee695r3000r3051r3052r3081r4000r4400r4700 PDF

    dli personal line

    Abstract: R3052 CH-8050 IEEE695 R3000 R3051 R3081 R4000 R4400 R4700
    Contextual Info: Logic Analyzers DLI Personal Line Flexible Logic Analyzer Family for the Windows Operating System Features ❏ Disassemblers without the need of preprocessor hardware for reverse assembly of processor-code with detection and marking of jumps and non executed instructions.


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    ca777-9842171stdli personal liner3052+8ch-8050ieee695r3000r3051r3081r4000r4400r4700 PDF

    1PS89SS04

    Abstract: 1PS89SS05 1PS89SS06 SOT49
    Contextual Info: DISCRETE SEMICONDUCTORS [Mm S^EET 1PS89SS04/05/06 High-speed double diodes P relim inary specification Philips Semiconductors 1998 Oct 30 PHILIPS Philips Semiconductors Preliminary specification High-speed double diodes FEATURES 1PS89SS04/05/06 MARKING • Improved power dissipation in


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    1ps89ss04/05/061ps89ss041ps89ss051ps89ss06+31ps89sssca60sot49 PDF

    s10p40

    Abstract: C53l SS34 sma SS54 smb K4 SOD SK24 equivalent SK34 smc diode s14L SSM14APT SSM5819SLPT
    Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Equivalent Current Voltage Surge Current Outline Circuit @ 25°C TA @ 25°C TA @ 8.3mS NO. Diagram IR IFM Surge


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    od-123s30s20pts30s30pts30s35pt+10s10p40c53lss34 smass54 smbk4 sodsk24 equivalentsk34 smcdiode s14lssm14aptssm5819slpt PDF

    marking ss14

    Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
    Contextual Info: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –


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    214ac-ss1550mvp-pmarking ss14+9ss14 do-214acss14marking ss15 smass14 smass15ss16ss12 markingss14 do-214ac smass13 PDF

    Contextual Info: S16LC03-8 THRU S16LC24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0288, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S16LC03-8 = Part Name S =S YY = Year WW = Week L = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 •


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    s16lc03-8s16lc24-8n0288so-16 PDF

    Contextual Info: S16LCC03-8 THRU S16LCC24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0290, Rev. A MARKING DIAGRAM Where XXXXX is YYWWL S16LCC03-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 •


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    s16lcc03-8s16lcc24-8n0290so-16 PDF

    Contextual Info: S1603-8 THRU S1624-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0293, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S1603-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 •


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    s1603-8s1624-8n0293so-16 PDF

    Contextual Info: S16C03-8 THRU S16C24-8 SANGDEST MICROELECTRONICS Green Products Technical Data Data Sheet N0289, Rev. - MARKING DIAGRAM Where XXXXX is YYWWL S16C03-8 S YY WW L = Part Name =S = Year = Week = Lot Number Cautions:Molding resin Epoxy resin UL:94V-0 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113  86 25-87123907 •


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    s16c03-8s16c24-8n0289so-16 PDF

    s10p40

    Abstract: SCM54 SCM35 SBM19 SCM84 SSM19 SCM32 Ssm34 SBM14 SSM35
    Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking PLASTIC MATERIAL USED CARRIES UL 94V-0 Maximum Maximum Maximum Reverse Forward Forward Peak Current Voltage Surge Current Outline @ 25°C TA @ 25°C TA @ 8.3mS NO. IR IFM VFM IFM Surge Adc APK


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    od-123s15p20s15p30s15p40+10s10p40scm54scm35sbm19scm84ssm19scm32ssm34sbm14ssm35 PDF

    GPI048

    Abstract: upd3 PD30111
    Contextual Info: ¿¿PD30111 NEC 23. ELECTRICAL SPECIFICATIONS This section shows the electrical specifications of versions 1.1 and 2.0 of the V r41 11. The revision is identified by the marking in the top of the package. 23.1 Version 1.1 Absolute Maximum Ratings T a = 25°C


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    upd30111ns/20gpi048upd3+1pd30111 PDF

    marking code 11 dfn

    Abstract: S17 SMD OCXO S15
    Contextual Info: SURFACE MOUNT MINIATURE PRECISION OSCILLATOR DFN S2-LE LVPECL & DFN S2-LL (LVDS) 7.2±0.2 KEY FEATURES 5.08 Marking: 5.3±0.1 16 to 213 MHz ± 20 ppm/10 years stability available DFN S2-LEC/LL Frequency Code yrwk 1 ps RMS jitter over 50 kHz to 80 MHz B.W.


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    ppm/10j-std-020cmarking code 11 dfns17 smd+1ocxo s15 PDF

    Elpida LPDDR2 Memory

    Abstract: MT46H32M32LF MT46H64M16LF
    Contextual Info: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


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    mt46h64m16lfmt46h32m32lf09005aef82ce3074elpida lpddr2 memory PDF

    marking D76

    Contextual Info: D IO D E S SOT-23/TO-236AB ‘TMPD’ GENERAL-PURPOSE DIODES ELECTRICAL CHARACTERISTICS at TA = 25°C VF Device Type Description •f v BR Min. Max. Marking Max. mA (V) 5D 600 100 T M P D 9 14 G e n e ral-P u rpo se TM P D 4 14 8 G e n e ral-P u rpo se 5D


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    ot-23/to-236abbav74marking d76 PDF

    ELPIDA mobile dram LPDDR2

    Abstract: LPDDR2 SDRAM micron infineon power cycling
    Contextual Info: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4


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    256mbmt46h16m16lfmt46h8m32lf09005aef834bf85b+3elpida mobile dram lpddr2lpddr2 sdram microninfineon power cycling PDF

    smx 3 crystal

    Abstract: E 32.0000 C S1612 60.0000 oscillator ds 205 cmos series
    Contextual Info: S1612 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 5 x 7mm Pin Functions Packaging Outline Product Features Pin Function • Pin-compatible with standard 5x7mm packages 1 OE Function • Designed for standard reflow and washing techniques


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    s1612smx 3 crystale 32.0000 c60.0000 oscillator+2ds 205cmos series PDF

    Contextual Info: S1632 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design • 1.8V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages


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    s1632 PDF

    s1632

    Abstract: E 32.0000 C 1632 32.0000
    Contextual Info: S1632 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design • 1.8V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages


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    s1632e 32.0000 c1632 32.0000 PDF

    E 32.0000 C

    Abstract: S1614 Saronix 32 MHz crystal D0208
    Contextual Info: S1614 Series 2.5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 5 x 7mm Pin Functions Packaging Outline Product Features • Less than 1.5 ps RMS jitter with fundamental or overtone design • 2.5V CMOS compatible logic levels • Pin-compatible with standard 5x7mm packages


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    s1614e 32.0000 csaronix 32 mhz crystald0208 PDF

    saronix 106.2500

    Abstract: Saronix 32 MHz crystal Saronix 48 MHz crystal E 32.0000 C S1634 marking s4x
    Contextual Info: S1634 Series 2.5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Pin Functions Packaging Outline Product Features • Less than 1.5 ps RMS jitter with fundamental or overtone design • 2.5V CMOS compatible logic levels • Pin-compatible with standard 3.2x5mm packages


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    s1634saronix 106.2500saronix 32 mhz crystalsaronix 48 mhz crystal+2e 32.0000 cmarking s4x PDF

    Contextual Info: S1615 Series 5V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 5 x 7mm Pin Functions Packaging Outline Product Features Pin Function • Pin-compatible with standard 5x7mm packages 1 OE Function • Designed for standard reflow and washing techniques


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    s1615 PDF

    Contextual Info: PRELIMINARY INFORMATION, COMPANY CONFIDENTIAL S1632 Series 1.8V CMOS Low Jitter Crystal Clock Oscillator XO Actual Size = 3.2 x 5mm Product Features Pin Functions Packaging Outline • Less than 1.5 ps RMS jitter with fundamental or overtone design • 1.8V CMOS compatible logic levels


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    s1632 PDF