MARKING S11 Search Results

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

Contextual Info: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 B100, #B100 SERIES, O NE-PIECE BLOCKS — PHENOLIC ACCESSO RIES COVERS AND MARKING #0 F CIRCUITS LAMINATED PHENOLIC COVER SHORTING BLOCK COVER WHITE MARKING STRIP NUMBERED MARKING STRIP C S102 C S 10 4

marking JY sot-23

Abstract: sot-23 Marking 3D BAT34 LV4, SMD SOT-346 sot-23 Marking B1 SR715F SMD23 bat54 sot-323 B4 SOD-123
Contextual Info: E L E C T R O N I C Device Marking of Surface Mount Schottky July 2007 /Rev. 1 Part Number Package Marking Part Number Package Marking SR520G-30 SOD-723 2 SR651H-40 SOD-323 JT SR521G-30 SOD-723 3 BAT54T SOT-416 TS SR751G-40 SOD-723 5 BAT54TA SOT-416 TT SR501G-40

marking s11

Contextual Info: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of

2012U

Abstract: marking s11
Contextual Info: Multilayer Chip Balun CHM2012U-F 積層チップバラン Series TYPE CHM2012U-F Series 2.0±0.15 3 2 0.3±0.15 1 MARKING 1.0Max. 1.25±0.15 4 5 SIDE VIEW TOP VIEW ③ ④ 0.65 0.35 6 NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper surface of the

marking s11

Contextual Info: Multilayer Chip Balun CHM1608U-F 積層チップバラン Series TYPE CHM1608U-F Series 1.6±0.15 3 2 0.3±0.1 1 MARKING 0.8±0.1 0.8±0.1 4 5 6 0.55 0.25 TOP VIEW SIDE VIEW ③ ④ NC IN ② GND ① OUT1 ⑤ GND ⑥ OUT2 Unit: mm • Marking of polarity : marking is on the upper Surface of

"marking E1"

Abstract: BFS17 BFS17R sot 23 transistor 70.2
Contextual Info: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

rlr05

Contextual Info: S11B0 THE RESISTOR PEOPLE ESTABLISED RELIABILITY MIL-QUALIFIED METAL GLAZE RESISTOR - Digital marking per MIL-R-39017 Spriallec or laser helixed to resistance value, tolerance RLR SERIES • • • • • High temperature soldered termination-lead assembly

qfn-12

Abstract: cdm 12.1 laser MC13820 QFN12 IP3 BOOST
Contextual Info: Freescale Semiconductor, Inc. Technical Data MC13820/D Rev. 0, 06/2004 MC13820 Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 1345 QFN-12 Ordering Information Device Marking Package MC13820

MBC13720

Abstract: MBC13720T1 low noise amplifier 0947
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13720/D Rev. 2, 12/2003 MBC13720 SiGe:C Low Noise Amplifier with Bypass Switch Freescale Semiconductor, Inc. Package Information Plastic Package Case 419B SOT-363 Ordering Information Device Device Marking

4066 spice model

Abstract: LL1608-FH MBC13900 MBC13900T1
Contextual Info: Freescale Semiconductor, Inc. Technical Data MBC13900/D Rev. 0, 06/2002 MBC13900 NPN Silicon Low Noise Transistor Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 318M (SOT-343) Ordering Information Device Marking Package

GaAs FET cfy 14

Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration

905 motorola

Abstract: MRFIC0970 QFN-20 GSM900 MOTOROLA RF POWER SEMICONDUCTOR DETAIL freescale 352 2.6 v
Contextual Info: Freescale Semiconductor, Inc. Technical Data MRFIC0970/D Rev. 0, 07/2002 MRFIC0970 3.2 V GSM GaAs Integrated Power Amplifier Scale 2:1 Freescale Semiconductor, Inc. Package Information Plastic Package Case 1308 (QFN-20) Ordering Information Device Marking

4085C

Contextual Info: Thin Film Band-Path Filter TBF-2520 series NEW Small size that contributes space-saving Excellent loss characteristics Applications Bluetooth, Wireless LAN, PHS SPECIFICATIONS 2.5Ϯ0.2 Equivalent circuit 0.5Ϯ0.1 0.2Ϯ0.1 2.0Ϯ0.2 Mechanical 0.4Ϯ0.1 Marking

Contextual Info: SIEMENS Silicon Schottky Diode BAT 15-098 Preliminary Data • DBS mixer application to 10 GHz • Low noise figure • Low barrier type ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration

Contextual Info: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1

up/xr+2320

Contextual Info: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

case marking y9

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

CAP 0805 ATC 600F

Contextual Info: ATC 600F Series Ultra-Low ESR, High Q, NPO RF & Microwave Capacitors Features: • Lowest ESR in Class • Highest Working Voltage in class – 250V • Standard EIA Size: 0805 • Laser Marking Optional • High Self Resonance Frequencies Applications:

Contextual Info: TOSHIBA TA4008F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA4008F 1.6GHz BAND BUFFER AMPLIFIER APPLICATION FEATURES • Low current Ice =9mA Typ. • Recommended operating voltage PIN ASSIGNMENT (TOP VIEW) IN GND V c c = 2 .7 - 3 .3V MARKING