MARKING R4S Search Results

Contextual Info: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

4GHZ TRANSISTOR

Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

marking re

Abstract: BFP640 BGA420 T-25
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

bfp640

Abstract: BFP640/F
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

bfp640f

Abstract: BFP420F
Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

BFP640E6327

Abstract: BFP640 noise figure bfp640e R4S BFP640
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

bfp640f

Abstract: bfp640 R4S BFP640F BFP420F Infineon Technologies transistor 4 ghz
Contextual Info: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

marking r4s

Abstract: bfp640f BFP640F equivalent ccb 21
Contextual Info: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

marking r4s

Abstract: R4S BFP640 BFP640 BFP640 noise figure
Contextual Info: BFP640 3 NPN Silicon Germanium RF Transistor Preliminary data 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications 1
Outstanding noise figure F = 0.65 dB at 1.8 GHz

bfp640f

Abstract: SPICE 2G6 transistor BF 298
Contextual Info: BFP640F XYs NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

R4S BFP640

Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

4ghz s parameters transistor

Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 BFP640E/L6327 and E/L7764 • High gain low noise RF transistor • Provides outstanding performance 2 for a wide range of wireless applications • Ideal for CDMA and WLAN applications 1 VPS05605 • Outstanding noise figure F = 0.65 dB at 1.8 GHz

R4S BFP640

Abstract: BFP640 transistor ph 45 v marking r4s
Contextual Info: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

RAS 0510

Abstract: LGA 775 PIN diagram TB 1275 N DATA SHEET PCR 606 J R4F24569VFQV 2n 1305 A18E ac servo motor encoder IRF 444 H lga 1156
Contextual Info: REJ09B0467-0100 16 H8S/2456, H8S/2456R, H8S/2454 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2456 H8S/2456R H8S/2454 R4F2456 R4S2456 R4F2456R R4S2456R R4F2454 R4S2454 All information contained in this material, including products and product

RAS 0510

Abstract: PO 903 transistor 1270 A18E IRF P 914 D BU 508 AF LGA 775 PIN diagram ESE 1012 1117 3.3 BC 594
Contextual Info: REJ09B0466-0100 16 H8S/2426, H8S/2426R, H8S/2424 Group Hardware Manual Renesas 16-Bit Single-Chip Microcomputer H8S Family / H8S/2400 Series H8S/2426 H8S/2426R H8S/2424 R4F2426 R4S2426 R4F2426R R4S2426R R4F2424 R4S2424 All information contained in this material, including products and product

3A5 tube

Abstract: marking code p60 SMD MARKING 3AB SMD IC 3f5 4f4 marking
Contextual Info: INTEGRATED CIRCUITS XA-S3 XA 16-bit microcontroller 32K/1K OTP/ROM/ROMless, 8-channel 8-bit A/D, low voltage 2.7 V–5.5 V , I2C, 2 UARTs, 16MB address range Preliminary specification Supersedes data of 1999 Oct 29 Philips Semiconductors 2000 Mar 09 Philips Semiconductors

Contextual Info: STTH3R04 Ultrafast recovery diode Features • Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature A K DO-15 DO-201AD STTH3R04Q STTH3R04 Band indicates cathode side. Description The STTH3R04 series uses ST's new 400 V

3R4U

Abstract: DO201AD JESD97 STTH3R04 STTH3R04Q STTH3R04S STTH3R04U smc 40
Contextual Info: STTH3R04 Ultrafast recovery diode Features • Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature A K DO-15 DO-201AD STTH3R04Q STTH3R04 Band indicates cathode side. Description The STTH3R04 series uses ST's new 400 V

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

tlr2u

Abstract: asda HD4074408S 4074418H marking B5T DP-64S HD404418F HD404418H HD404418S HMCS400
Contextual Info: HD404418 Series Description The HD404418 Series of 4-bit single-chip micro­ computers are basically equivalent to the HMCS400 series providing high programming productivity and high-speed operation. The devices incorporate ROM , RAM, I/O, four timer/counters, and two

fsk modulator using 555

Abstract: PLC modem plc modem using fsk X25 crc fsk modem MX 128 D MX919B MX919BDS MX919BDW MX919BLH
Contextual Info: MX919B COMMUNICATION SEMICONDUCTORS DATA BULLETIN 4-Level FSK Modem Data Pump PRELIMINARY INFORMATION Features Applications • 4-Level Root Raised Cosine FSK Modulation • Wireless Data Terminals • Half Duplex, 4800 to 19.2kbps • Two Way Paging Systems

fsk modulator using 555

Abstract: plc modem using fsk PLC modem 11R4S fsk modem wireless modem design of wireless data modem using fsk modulation MX929B MX929BDS MX929BDW
Contextual Info: MX929B COMMUNICATION SEMICONDUCTORS DATA BULLETIN 4-Level FSK Modem Data Pump PRELIMINARY INFORMATION Features Applications x 4-Level Root Raised Cosine FSK Modulation x RD-LAP¥ ¥ Systems x Half Duplex, 4800 to 19.2kbps x RCR STD-47 Systems x Increase Channel Bit Rate/Hz