MARKING QV Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LM3Z2V4T1 SERIES 200 mW SOD–323 Surface Mount 1 ORDERING INFORMATION Device * Package Shipping LM3ZxxxT1 SOD–323 3000/Tape & Reel 2 SOD– 323 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical

MM3Z75VT1

Abstract: MM3Z39VT1 marking code zener 242
Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators MM3Z2V4T1 SERIES 200 mW SOD–323 Surface Mount 1 ORDERING INFORMATION Device * Package Shipping MM3ZxxxT1 SOD–323 3000/Tape & Reel 2 CASE 477–02, STYLE 1 SOD– 323 DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical

Contextual Info: Ex block terminals T Dimensions Width/length/height mm with TS 35 x 7.5 W Insulation stripping length/terminal screw/screwdriver blade Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC

Contextual Info: Feed-through terminal blocks Ex ZDU 6/E T Dimensions Width/length/height mm with TS 35 x 7.5 W Insulation stripping length/clamping screw Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC

Contextual Info: Feed-through terminal blocks Ex SAK 2.5/E EK 2.5N/E SAK 4/E EK 4/E T Rated data EN 50014 to EN 50020 Rated cross-section Cu EEx e voltage/EEx e current Marking EN 50019 Marking Ex directive RL94/9/EC EC type examination certificate EEx i voltage EN 50020 EEx i/EEx i distance > 6 mm1

C2332

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2332J-10 1. OUTLINE DIMENSION L: 5.45 B: 3.0 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2332-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2332.5 MHz

bt 1840

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2426J-10 1. OUTLINE DIMENSION L: 5.2 B: 3.0 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2426-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2426.5 MHz

CCL H870

Abstract: 2451
Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2332J-10 1. OUTLINE DIMENSION L: 5.45 B: 3.0 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2332-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2332.5 MHz

Contextual Info: SPECIFICATION OF DIELECTRIC TOKO P/No: FILTER PRELIMINARY TDFM3C-2426J-10 1. OUTLINE DIMENSION L: 5.2 B: 3.0 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C2426-10 F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20 : 2426.5 MHz

Marking code mps

Contextual Info: NPN MPS8098, MPS8099*, (PNP) MPS8598, MPS8599* *Preferred Device Amplifier Transistors Voltage and Current are Negative for PNP Transistors http://onsemi.com MAXIMUM RATINGS Rating MARKING DIAGRAM Symbol Collector −Emitter Voltage MPS8098, MPS8598 MPS8099, MPS8599

Contextual Info: SPECIFICATION OF TDFM3C TOKO P/N: DIELECTRIC FILTER PRELIMINARY TDFM3C-1960L-10 1. OUTLINE DIMENSION L: 6.4 1 B: 4.5 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C1960-10 TOKO F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20

CCL H870

Abstract: toko 4.5
Contextual Info: SPECIFICATION OF TDFM3C TOKO P/N: DIELECTRIC FILTER PRELIMINARY TDFM3C-1960L-10 1. OUTLINE DIMENSION L: 6.4 1 B: 4.5 Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv Marking : C1960-10 TOKO F Tolerance : 0.3 Unit : mm 2. ELECTRICAL CHARACTERISTICS SPECIFICATION(-20

C1880

Abstract: Dielectric Filter
Contextual Info: SPECIFICATION OF TDFM3C DIELECTRIC FILTER PRELIMINARY TOKO P/N: TDFM3C-1880L-11 1. OUTLINE DIMENSION L: 6.8 B: 4.0 Marking : C1880-11 TOKO F Tolerance : 0.3 Unit : mm Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY (Fo)

Contextual Info: SPECIFICATION OF TDFM3C DIELECTRIC FILTER PRELIMINARY TOKO P/N: TDFM3C-1880L-11 1. OUTLINE DIMENSION L: 6.8 B: 4.0 Marking : C1880-11 TOKO F Tolerance : 0.3 Unit : mm Ÿ w}| £ ovl ovl ¤ ovl ¡ ovl ¥ ovl ¢ qv 2. ELECTRICAL CHARACTERISTICS CENTER FREQUENCY (Fo)

2N55551

Abstract: 2N5551 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

BCW69

Abstract: BCW69LT1 BCW70 BCW70LT1
Contextual Info: ON Semiconductort BCW69LT1 BCW70LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Emitter–Base Voltage VEBO –5.0 Vdc IC –100 mAdc Collector Current — Continuous 3 1 DEVICE MARKING

2n5551

Abstract: 2N55551 2N5551 circuit 2n5550
Contextual Info: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit

Ta2O5 phase diagram

Abstract: EIA-535 Ta2O5
Contextual Info: TBJ Series Including CWR11 and COTS-Plus The TBJ Series encompasses five case sizes, A through E, corresponding to EIA535BAAC, the commercial industry standard. This series also offers molded body/compliant termination construction, polarity and capacitance marking. The

Contextual Info: ON Semiconductort General Purpose Transistor MMBTA70LT1 PNP Silicon MAXIMUM RATINGS Symbol Value Unit Collector−Emitter Voltage Rating VCEO −40 Vdc Emitter−Base Voltage VEBO −4.0 Vdc IC −100 mAdc Collector Current — Continuous 3 1 2 DEVICE MARKING

Contextual Info: MMBT3904TT1 General Purpose Transistors MMBT3904TT1 – NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. • Device Marking:

1N916

Abstract: MMBT3904TT1 MMBT3904WT1 SMD310
Contextual Info: MMBT3904TT1 General Purpose Transistors MMBT3904TT1 – NPN Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. • Device Marking:

Contextual Info: WP SERIES IP67 UV-PROTECT PLASTIC ENCLOSURE What's IP67? ●IP Code is an "Ingress Protection Marking" under IEC 60529 and rates the degree of protection provided against the intrusion, dust, and water. IP6x : Completely protected against contact dust tight

MMBTA70LT1

Abstract: 50K MARKING SOT23
Contextual Info: ON Semiconductort General Purpose Transistor MMBTA70LT1 PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –40 Vdc Emitter–Base Voltage VEBO –4.0 Vdc IC –100 mAdc Collector Current — Continuous 3 1 2 DEVICE MARKING

Contextual Info: MMBT3906TT1 General Purpose Transistors MMBT3906TT1 − PNP Silicon This transistor is designed for general purpose amplifier applications. It is housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. • Device Marking: