MARKING QJ Search Results

EIA-364-31

Abstract: EIA-364-27 EIA364-31 EIA-364-6 EIA-364-21 EIA-364-20 EIA J code marking SJS830270 EIA364-26 eia marking code
Contextual Info: SJS830250 I REV I ECN I APP'D~ 6431 HITE MARKING 0.040" HIGH CHARACTERS WHITE DOT 1 1/ r U; i |Jj{ J_ -QJ HITE MARKING ì n .il .322 .UNLOCK 1 WHITE MARKING ! - TES .077 i005 -.010 .242 TEST REQUIREMENT TEST METHOD MIL-STD-1344 SUPERSEDED BY EIA 364

10M1TR

Abstract: DTC143TKA
Contextual Info: DTC143TE DTC143TUA DTC143TKA Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC143TE (EMT3) package marking: DTC143TE, DTC143TUA, and DTC143TKA; 03 0 .7 + QJ

Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon LMBT6517LT1G S-LMBT6517LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information Device LMBT6 517LT1G S-LMBT6 517LT1G LMBT6517LT3G S-LMBT6517LT3G Marking

485G

Abstract: PRBS23
Contextual Info: NB7VPQ16M 1.8V/2.5V CML 12.5 Gbps Programmable Pre-Emphasis Copper/Cable Driver with Selectable Equalizer Receiver http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description 16 The NB7VPQ16M is a high performance single channel

marking code V6 DIODE

Abstract: marking code v6 SOT23 SOt23-5 footprint wave soldering U1500 marking code V6 V6 marking code diode 3.GND SOT-23 On semiconductor date Code tsop-5 MC74VHC04 MC74VHC1G04
Contextual Info: MC74VHC1GU04 Single Unbuffered Inverter http://onsemi.com MARKING DIAGRAMS 5 M The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. This device consists of a single unbuffered inverter. In combination

485G

Abstract: NB7V72MMNG NB7V72MMNHTBG PRBS23
Contextual Info: NB7V72M 1.8V / 2.5V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7V72M is a high bandwidth, low voltage, fully differential

qfn16 thermal resistance

Abstract: 485G NB7V72MMNG PRBS23
Contextual Info: NB7V72M 1.8V / 2.5V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7V72M is a high bandwidth, low voltage, fully differential

Contextual Info: NB7L72M 2.5V / 3.3V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7L72M is a high bandwidth, low voltage, fully differential

Contextual Info: NB7VPQ16M 1.8V/2.5V CML 12.5 Gbps Programmable Pre-Emphasis Copper/Cable Driver with Selectable Equalizer Receiver http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description 16 The NB7VPQ16M is a high performance single channel

M74VHC1GT125DF1G

Abstract: M74VHC1GT125DF2G M74VHC1GT125DT M74VHC1GT125
Contextual Info: MC74VHC1GT125 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL−Compatible Inputs http://onsemi.com MARKING DIAGRAMS 5 5 1 M The MC74VHC1GT125 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed

LMBT6520LT1G

Abstract: DATA56
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon LMBT6520LT1G We declare that the material of product compliance with RoHS requirements. Ordering Information 3 Device Marking Shipping LMBT6520LT1G 2Z 3000/Tape&Reel LMBT6520LT3G 2Z 10000/Tape&Reel

485G

Abstract: NB7L72MMNG PRBS23
Contextual Info: NB7L72M 2.5V / 3.3V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7L72M is a high bandwidth, low voltage, fully differential

Contextual Info: NB7L72M 2.5V / 3.3V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7L72M is a high bandwidth, low voltage, fully differential

Contextual Info: NB7V72M 1.8V / 2.5V Differential 2 x 2 Crosspoint Switch with CML Outputs Clock/Data Buffer/Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM* Description The NB7V72M is a high bandwidth, low voltage, fully differential

marking 82 sot343

Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Contextual Info: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR

Contextual Info: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

MC14053

Abstract: MC14053 application 948F HC4053 MAX4053 MAX4053A MC74HC4053 NLAS4053
Contextual Info: NLAS4053 Analog Multiplexer/ Demultiplexer Triple 2:1 Analog Switch−Multiplexer Improved Process, Sub−Micron Silicon Gate CMOS MARKING DIAGRAMS The NLAS4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub−micron Silicon Gate CMOS

Contextual Info: NB7L1008 2.5V / 3.3V 1:8 LVPECL Fanout Buffer Multi−Level Inputs w/ Internal Termination http://onsemi.com Description MARKING The NB7L1008 is a high performance differential 1:8 Clock/Data fanout buffer. The NB7L1008 produces eight identical output copies

Contextual Info: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

BFG505W

Abstract: MLC040
Contextual Info: Philips Semiconductors Product specification BFG505W BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG505W NO • High transition frequency BFG505W/X N1 • Gold metallization ensures

V 904 RL 805

Abstract: BFG520W N4 TAM transistor fp 1016 DIN45004B
Contextual Info: Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFG520W BFG520W/X; BFG520W/XR MARKING • High power gain TYPE NUMBER • Low noise figure BFG520W N3 • High transition frequency BFG520W/X N4 • Gold metallization ensures

NLAS4053G

Contextual Info: NLAS4053 Analog Multiplexer/ Demultiplexer Triple 2:1 Analog Switch−Multiplexer Improved Process, Sub−Micron Silicon Gate CMOS http://onsemi.com MARKING DIAGRAMS The NLAS4053 is an improved version of the MC14053 and MC74HC4053 fabricated in sub−micron Silicon Gate CMOS

marking code g1s

Abstract: marking g1s marking G2s
Contextual Info: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

Contextual Info: NB7L1008 2.5V / 3.3V 1:8 LVPECL Fanout Buffer Multi−Level Inputs w/ Internal Termination http://onsemi.com Description MARKING The NB7L1008 is a high performance differential 1:8 Clock/Data fanout buffer. The NB7L1008 produces eight identical output copies