MARKING QG Search Results

Contextual Info: selos selos Marking accessories for DIN rail terminal blocks Marking plates All blocks / 5 mm wide and larger for marcom 2 marking computer for wieplot 500 plotter system Type Part No. Std. Pack 9075 A/5/10/11 Part No. Std. Pack Single marking tag, unmarked

BC648B

Contextual Info: Transistors BC847B NPN General Purpose Transistor I BC847B •Feature« •E x te rn a l dimensions Units : mm 1 > BVceo<45V (lc=1m A ) 2 ) Complements the BC857B. BC847B •P a c k a g e , marking, and packaging specifications Type BC847B Package Marking

sk 841

Abstract: P16C711-04 i/p
Contextual Info: Tear-off marking strips with 10 marking tags 56 marking per set type m aterial: p o lya m id e 6 .6 w hite*, m a rkin g b lack 9704 A part no. Unmarked for co lo re d m arke r strip s p lea se a d d the follow ing fig ures to the p a rt no.: 1= b lack, 4 = b ro w n , 5 = re d , 6 = b !u e , 7 = g re e n , 8 = ye llo w

STK730P

Contextual Info: STK730P Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=400V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=1.0Ω(Max.) Ordering Information Type NO. Marking STK730P

Qg17nC

Abstract: STK830F STK830 17-NC
Contextual Info: STK830F Semiconductor Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • High Voltage: BVDSS=500V Min. Low Crss : Crss=8.4pF(Typ.) Low gate charge : Qg=17nC(Typ.) Low RDS(on) :RDS(on)=1.5Ω(Max.) Ordering Information Type NO. Marking STK830F

STK730FC

Abstract: KST-H014-000 STK730 AUK auk stk730
Contextual Info: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730

STK730F

Abstract: KST-H037-000
Contextual Info: STK730F . Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. STK730F Marking STK730 Outline Dimensions

Contextual Info: Central" CLL2003 sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.

Contextual Info: BEE D • 023b32Q QGlb7EM T H S I P NPN Silicon RF Transistor BF 517 SIEMENS/ SPCL-. SEMICONDS • r ^ 3 i - t 7 _ Broadband amplifier and oscillator applications up to 1 GHz Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

smd k72 y5

Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Contextual Info: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJ9435 P-Channel 30-V D-S MOSFET SOP8 Equivalent circuit MARKING: CJ9435 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ9435 P-Channel 30-V D-S MOSFET SOP8 Equivalent circuit MARKING: CJ9435 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage

NCP5380 D

Abstract: NCP5380 488AM
Contextual Info: NCP5380, NCP5380A 7-Bit, Programmable, Single-Phase, Synchronous Buck Switching Regulator Controller http://onsemi.com General Description MARKING DIAGRAM 1 1 NCP5380 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package

NCP1937

Contextual Info: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW

auk stk0765

Abstract: STK0765 STK0765F Advanced Power MOSFET KST-H038-000
Contextual Info: STK0765F Semiconductor Advanced Power MOSFET Features • Low Crss • Low gate charge. • HIGH BVDSS • Low leakage current Ordering Information Type NO. STK0765F Marking STK0765 Outline Dimensions Package Code TO-220F unit : mm PIN Connections 1. Gate

marking SH SOT23 mosfet

Abstract: DMZ5501 DMN5501 KP 72 marking SH SOT23 KP SOT23 DMZ5
Contextual Info: DMN5501/DMZ5501 Depletion-Mode Power MOSFET General Features Ordering Information 550V 60 Ω 200mA Package Marking DMN5501 TO-92 DMN5501 DMZ5501 SOT-23 5501 ina Part Number im Absolute Maximum Ratings Parameter TA=25℃ unless otherwise specified DMN5501

NCP81061

Abstract: NCP6151
Contextual Info: NCP81061 VR12 Compatible Synchronous Buck Dual MOSFET Driver http://onsemi.com MARKING DIAGRAM 1 QFN16 CASE 485AW Features • • Typical Applications • Power Management solutions for Desktop and Server Systems 81061 A L Y W G = Specific Device Code = Assembly Location

Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin configuration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

Contextual Info: SSF2N60D2 Main Product Characteristics: VDSS 600V RDS on 3.7Ω (typ.) ID 2A TO-252 Schematic diagram Assignment Features and Benefits:   Marking and pin Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications

Contextual Info: Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT MIAA15WD600TMH Single Phase Rectifier Three Phase Inverter VRRM = 1600 V VCES = 600 V IDAVM25 = IC25 IFSM 35 A = 270 A = 23 A VCE sat = 2.1 V Part name (Marking on product) MIAA15WD600TMH

f 0472 N-Channel MOSFET

Abstract: si5980
Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1

Contextual Info: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1

Contextual Info: MIXA30W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 43 A VCE sat = 1.8 V Part name (Marking on product) MIXA30W1200TMH E 72873 Pin coniguration see outlines. Features: Application: Package: • High level of integration - only one power semiconductor module required

STJ009

Abstract: marking 66m P-Channel mosfet stj009 KSD-T7F003-000
Contextual Info: STJ009 Semiconductor P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=1.0~3.0V • Small footprint due to small package • Low RDS (ON) : RDS (ON) =66mΩ Ordering Information Type NO. Marking