MARKING P3 Search Results

KDP623UL

Contextual Info: SEMICONDUCTOR KDP623UL MARKING SPECIFICATION ULP-12 PACKAGE 1. Marking method Laser Marking 1 No. P3 0A 2. Marking 2 Item Marking Description Device Mark P3 KDP623UL * Lot No. 0A 2007. 1st Week [0:1st Character, A:2nd Character] Note * Lot No. marking method

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

PXTA14

Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Contextual Info: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

S0692

Contextual Info: f l 7 SGS-THOM SON ^7# R ILECTI3 m gi S0692 SMALL SIGNAL PNP TRANSISTOR Type Marking S0692 P39 • SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER

EL2-P35

Contextual Info: Extract from the online catalog EL2-P35 Order No.: 2833592 Relay retaining bracket, with eject function and integrated equipment marking area 8 x 25 mm , to suit relay socket PR2, for 35 mm high

P31 SOT223

Abstract: BSP31 BSP33 BSP41 BSP43 transistors sot-223
Contextual Info: BSP31 BSP33 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BSP31 P31 BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE

DATE CODE FOR SUPERTEX

Contextual Info: TP5335 Low Threshold Initial Release P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Wafer -350V 30Ω -2.4V TP5335K1 TP5335NW Product marking for SOT-23 P3S❋ Where *=2-week alpha date code

bft93

Abstract: transistor BF 199
Contextual Info: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

Contextual Info: SIEMENS BFT92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration

BC239C equivalent

Abstract: BC550C equivalent bc237a equivalent bc238b equivalent BC548C equivalent bc238a equivalent bc108b equivalent bc549c equivalent bc183 equivalent BC237B equivalent
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

Contextual Info: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

scr control circuit for welding

Abstract: POW-R-BRIK SCR 131-6 SCR 2000 powerex R9G0 2100 scr welding 2200300 scr 209 3000 watt inverter SCR RECTIFIER
Contextual Info: POW-R-BRIK Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Phase Control Modules 345-800 Amperes/400-3000 Volts OUTLINE DRAWING MARKING: DEVICE AND DIRECTION ACCORDING TO CIRCUIT CONFIGURATION CHART L TYP. 4 PLACES C

G098PU322W

Contextual Info: G098PU322W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 22 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking

BSS56

Abstract: f025 ic marking z7 2N929 2N930 BAW63 BAW63A BFS36 BFS36A BS9302
Contextual Info: MICRO-E MICRO-E PRODUCT LIST Where approval for military use has been obtained the appropriate British Standards number is indicated under B.S. number. Diodes Transistors Type Device marking BFS36 BFS36A BFS37 L1 L2 L3 BFS37A BFS38 BFS38A BFS39 BFS40 BFS40A

Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-rioise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 81 FAs

G098PU312W

Contextual Info: G098PU312W TECHNICAL DATA High Power Fiber Coupled Infrared Laser Diode Features • CW Output Power: 12 W • Typical 980 nm Emission Wavelength • High Reliability • High Efficiency Applications • Medical Usage • Heating • Material Processing • Marking

Contextual Info: ERC04 F (1.5A) Outline Drawings GENERAL USE RECTIFIER DIODE ) Features • Compact size, light weight • S U f fiii I ^ tk : Marking High reliability ! Applications Abridged type name General purpose rectifier applications V? | ° l• B E ? 7* Voltage class

80C166-M

Abstract: 80C166M SAB 80C166-M CB "marking ca" 80C166 80C166E 88C166 C166 TCL SERVICE MANUAL SAB 80C166 single step
Contextual Info: Microcomputer Components Technical Support Group Munich HL MCB AT 1 Errata Sheet March 20, 1996 / Release 1.0 Device : Stepping Code / Marking : SAB 80C166 - M, SAB 80C166 - M - T3 ES-DA, DA This Errata Sheet describes the functional problems see part A and the

C515C

Abstract: C515C-8E
Contextual Info: Microcontrollers Errata Sheet 9 July 2001 / Release 1.4 Device: Stepping Code / Marking: Package: C515C-8E BB P-MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

88c166

Abstract: 80C166 80C166W C166 TCL service manual
Contextual Info: Microcontroller Components Errata Sheet December 23, 1998 / Release 1.1 Device: SAB 80C166W-M SAB 80C166W-M-T3 SAB 80C166W-M-T4 Stepping Code / Marking: ES-DA, DA Package: MQFP-100 This Errata Sheet describes the deviations from the current user documentation. The

transistor w4

Abstract: BSS56 f007 AMPLIFIERS transistors for uhf oscillators 2N2475 f021 f025 ic marking z7 marking Z6 rf marking Y2
Contextual Info: MICRO-E MICRO-E PRODUCT LIST W here approval for military use has been obtained the appropriate British Standards number is indicated under B .S . number. Diodes Transistors Type Device marking Nearest metal can or IE-line equivalent B .S . number* Page Type

Contextual Info: BAS19 BAS20 BAS21 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES Silicon planar epitaxial high-speed diodes PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking BAS19 = A8 BAS20 = A81 BAS21 = A82 _3.0_ 2.8 0.14 0.48 0.38 Pin configuration 1 = ANODE 2 = NC 3 = CATHODE