MARKING N58 Search Results

n5822

Abstract: 1N5820-1N5822 1N5820 1N5821 1N5822
Contextual Info: 1N5820 - 1 N5822 3.0A SCHOTTKY BARRIER RECTIFIERS Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward

1N5822

Contextual Info: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,

SOT89 MARKING n43

Abstract: n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

N58 SOT-89

Abstract: 82N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS  DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

SOT-23 MARKING N55

Abstract: SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS 4 3 „ DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

marking n58

Abstract: sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

marking n58

Contextual Info: Transistors SMD Type Product specification FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current

marking n58

Abstract: smd transistor marking br FCX458 A 320v MARKING SMD NPN TRANSISTOR BR transistor marking smd transistor smd marking MARKING SMD npn TRANSISTOR
Contextual Info: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 82NXX CMOS IC V OLT AGE DET ECT ORS 4 3 5 ̈ DESCRI PT I ON 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

K1181

Abstract: B37986d
Contextual Info: Leaded Capacitors, EIA Standard COG • • • • Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications • • • • 00, 50+ 0,05 Resonant circuits Filter circuits Timing elements Coupling and filtering,

D1391

Abstract: G5684 k1060 d5030 power transistor k1821 K0220 d5101 k1120 transistor m1104 K1060 data sheet
Contextual Info: Contents List of Ordering Codes Page 5 8 Overview of Available Types Electrical Characteristics in Brief 11 26 Standard Chip Capacitors Slim-Line Chip Capacitors 27 55 Leaded Capacitors, EIA Standard Leaded Capacitors, CECC Standard 59 68 General Technical Information

Contextual Info: ZT5050 Series TCXO 10.0 MHz — 60.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Very High Stability Euro Package HCMOS or Sine Wave Output 3.3V or 5V Supply Ideal for Communications and Test Equipment Combination of Analog and Digital design for applications which

marking n58

Abstract: T78 5V T-78
Contextual Info: ZT5050 Series TCXO 10.0 MHz – 60.0 MHz GREENRAY INDUSTRIES, INC. PRECISION QUARTZ TECHNOLOGY Very High Stability Euro Package HCMOS or Sine Wave Output 3.3V or 5V Supply Ideal for Communications and Test Equipment Combination of Analog and Digital design for applications which

n5822

Contextual Info: 1N5820 - 1N5822 VISHAY 3.0A SCHOTTKY BARRIER RECTIFIERS /uTE M ir I POWERSEMICONDUCTOR J Features • • • • • • • Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Etticiency High Surge Capability

Zener diode smd marking S4

Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Contextual Info: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.

N5392

Abstract: B37979 N5181 g5561 siemens leaded ceramic capacitors n5822 G5332 n1330j G1821 N1222
Contextual Info: Leaded Capacitors, EIA Standard C0G Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering, particularly in RF circuits

n1222

Abstract: n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter
Contextual Info: Multilayer Leaded Capacitors, EIA Standard C0G/NP0/CH Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering,

Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP

N5818

Contextual Info: 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS If av 1A V rrm 40 V Tj 150°C V f (max) 0.45 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP

N5821

Abstract: 1N5821 diode do-201
Contextual Info: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 3A V rrm 40 V Vf 150°C Tj (max) 0.475 V FEATURES AND BENEFITS • ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP

G547

Abstract: G1331 n556 G1182 cr 104 G1120 G1151 G1821 N133 n139
Contextual Info: Multilayer Leaded Capacitors, EIA Standard C0G/NP0 Features b Good thermal stability High insulation resistance Low dissipation factor Low inductance * 30+5 *) Applications • ■ ■ ■ s h ■ ■ ■ ■ Resonant circuits Filter circuits Timing elements

7Mc 8128z

Abstract: 8128Z
Contextual Info: SL5019/P Semiconductor LOW POWER NARROW BAND FM IF Description The SL5019/P performs single conversion FM reception and consist of oscillator, mixer, limiting IF amplifier, and meter drive circuitry. These devices are designed for use in FM dual conversion communication equipment.

N5817

Abstract: SL5018 SL5019 U455D CTS100MHz c4560 7Mc 8128z
Contextual Info: SL5019/P Semiconductor LOW POWER NARROW BAND FM IF Description The SL5019/P performs single conversion FM reception and consist of oscillator, mixer, limiting IF amplifier, and meter drive circuitry. These devices are designed for use in FM dual conversion communication equipment.

Contextual Info: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,