MARKING N53 Search Results

n5311

Abstract: ep53A8 N5312 Enpirion Product Marking Specification EP5358HUI EP5358 P5352 EP5387LQI EN5337 ep5358lui
Contextual Info: Enpirion Product Marking Specification Enpirion Product Marking Specification Top Marking Product ID Row 1 Marking See View Product ID Row 1 Marking EN5311QI N5311 2 EP5358HUI ANXX 1 EN5312QI N5312 2 EP5358LUI AKXX 1 EN5322QI N5322 2 EP5362QI P5362 2 EN5335QI

siemens siferrit N27

Abstract: Siferrit N67 UU CORE 100-turn u cores UI N27
Contextual Info: U, UI and UR Cores General Information 1 Core shapes and materials U and I cores are made of SIFERRIT materials N27, N53, N62, N67 and now new, of N82. Owing to their high saturation flux density, high Curie temperature and low dissipation losses, they are suitable for power, pulse and high-voltage transformers in particular line deflection transformers and

military part marking symbols jan

Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
Contextual Info: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,

N5349B

Abstract: N5383 N536 5w zener n5352b N5342B 1n5388b
Contextual Info: T SGS-THOMSON ^7# 1N5335B / 1 N5388B 5W ZENER DIODES FEATURES • VOLTAGE RANGE : 3.9 V to 200 V ■ HERMETICALLY SEALED PLASTICCASE ■ HIGH SURGE CAPABILITY: 180 W 8.3 m s . DESCRIPTION 5 W Zener diodes. ABSOLUTE RATINGS (Tamb = 25°C) Svmbol P T stg Tj

N5358

Abstract: NCP5358MN N5358A
Contextual Info: NCP5358 Gate Driver for Desktop Power Systems QFN−16 CASE 485D 4x4 mm N5358 A L Y W G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package PIN CONNECTIONS GND Faster Rise and Fall Times Thermal Shutdown Protection Adaptive−Non−Overlap Circuit

SOT89 MARKING n43

Abstract: n33 SOT-23 n58 sot89 77 ic marking code marking n55 Marking code n15 SOT89 marking N42 N45 SOT-89
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

N58 SOT-89

Abstract: 82N60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS  DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

SOT-23 MARKING N55

Abstract: SOT89 MARKING n35 SOT89 MARKING N40 SOT89 MARKING n43 N54 SOT-23 N58 SOT-89 MARKING N52 SOT 6 Marking code n15 SOT89 device marking N52 MARKING N46
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS 4 3 „ DESCRIPTION 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

marking n58

Abstract: sot-23 Marking N52 marking N52 82N50 n10 marking code sot 23 82n55 SOT89 MARKING n35 82N60 82N25 N58 SOT-89
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 82NXX CMOS IC VOLTAGE DETECTORS „ DESCRIPTION The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

Contextual Info: Leaded Capacitors, EIA Standard Z5U Y5U Features • Extremely high volumetric efficiency • Non-linear capacitance change Applications • • • • Blocking Coupling Decoupling Interference suppression 00,50+0,05 Terminals • Parallel wire leads iron-nickel, tinned

1/diode n53

Contextual Info: CM1453-04CP Praetorian 4-Channel LCD Camera EMI Filter Array with ESD Protection Features • • • • • • • • channel of the CM1453-04CP is implemented as a 3 pole L-C filter where the component values are 9.5pF 20nH-9.5pF. The roll-off frequency at -6dB attenuation

CM1453-06CP

Contextual Info: CM1453-06CP Praetorian 6-Channel LCD Camera EMI Filter Array with ESD Protection Features • • • • • • • • channel of the CM1453-06CP is implemented as a 3 pole L-C filter where the component values are 9.5pF 20nH-9.5pF. The roll-off frequency at -6dB attenuation

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 82NXX CMOS IC V OLT AGE DET ECT ORS 4 3 5 ̈ DESCRI PT I ON 2 The UTC 82NXX series are highly precise, low power consumption voltage detectors. Detect voltage is extremely accurate with minimal temperature drift. N-channel open drain output

N538

Contextual Info: CM1453-08CP Praetorian 8-Channel LCD Camera EMI Filter Array with ESD Protection Features • • • • • • • • channel of the CM1453-08CP is implemented as a 3 pole L-C filter where the component values are 9.5pF 20nH-9.5pF. The roll-off frequency at -6dB attenuation

K1181

Abstract: B37986d
Contextual Info: Leaded Capacitors, EIA Standard COG • • • • Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications • • • • 00, 50+ 0,05 Resonant circuits Filter circuits Timing elements Coupling and filtering,

D1391

Abstract: G5684 k1060 d5030 power transistor k1821 K0220 d5101 k1120 transistor m1104 K1060 data sheet
Contextual Info: Contents List of Ordering Codes Page 5 8 Overview of Available Types Electrical Characteristics in Brief 11 26 Standard Chip Capacitors Slim-Line Chip Capacitors 27 55 Leaded Capacitors, EIA Standard Leaded Capacitors, CECC Standard 59 68 General Technical Information

G5684

Abstract: siemens leaded ceramic capacitors N5104
Contextual Info: Leaded Capacitors, EIA Standard Z5U Y5U Features ● Extremely high volumetric efficiency ● Non-linear capacitance change Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression Terminals ● Parallel wire leads iron-nickel, tinned

G5684

Abstract: G547 matsushita capacitor Siemens matsushita capacitor g5473 siemens leaded ceramic capacitors 680 nf n5105 Siemens matsushita capacitor z5u Z5U diode
Contextual Info: Multilayer Leaded Capacitors, EIA Standard Z5U Y5U / F Characteristic Features ● Extremely high volumetric efficiency ● Non-linear capacitance change ● Y5U characteristic is also fulfilled Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression

N5392

Abstract: B37979 N5181 g5561 siemens leaded ceramic capacitors n5822 G5332 n1330j G1821 N1222
Contextual Info: Leaded Capacitors, EIA Standard C0G Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering, particularly in RF circuits

transistor n53

Abstract: BC869-10
Contextual Info: bbS3^31 00244*13 N AUER PHILIPS/DISCRETE • APX BC869 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor in a plastic microminiature envelope, intended for low-voltage, high-current l.f. applications. BC868/BC869 is the matched complementary pair suitable fo r class-B audio output

n1222

Abstract: n5181 G1821 G5562 N522 G1120 G1331 Siemens ceramic Capacitors C0G g5561 siemens matsushita ceramic filter
Contextual Info: Multilayer Leaded Capacitors, EIA Standard C0G/NP0/CH Features ● ● ● ● Good thermal stability High insulation resistance Low dissipation factor Low inductance Applications ● ● ● ● Resonant circuits Filter circuits Timing elements Coupling and filtering,

PA 6/6 GF30 SIEMENS

Abstract: Siemens Ferrite B65541 ferrite ei core n27 TESLA mh 7400 CRASTIN SO 655 IEC 60205 Luvocom B64290-A38 etd59 siemens Siemens Ferrite B64290
Contextual Info: Contents Selector Guide Index of Part Numbers 5 11 26 SIFERRIT Materials 33 General – Definitions Application Notes Processing Notes 111 128 150 Packing Quality Considerations Standards and Specifications 165 174 177 RM Cores PM Cores EP Cores 181 274 290

Siemens Ferrite B65541

Abstract: TESLA mh 7400 mh 7400 tesla MDT 760 THYRISTOR ARALDITE AY 105 ARALDITE HY 956 EPF S20 Siemens Ferrite B64290 ETD54 n62 ARALDITE D AY 103
Contextual Info: Contents Selector Guide Index of Part Numbers 5 11 23 SIFERRIT Materials 29 General – Definitions Application Notes Processing Notes 111 129 151 Packing Quality Considerations Standards and Specifications 165 175 179 RM Cores 183 PM Cores 283 P Cores P Core Halves P Cores for Proximity Switches

transistor n53

Abstract: ZX5T653F h 033 Marking N53
Contextual Info: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS