MARKING N11 DIODE Search Results

sot-363 MARKING n10 diode

Abstract: SOT-363 marking n10 EMP11 IMN11 marking N11 diode SOT marking P11 EMN11 IMN10 IMP11 UMN11N
Contextual Info: Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Unit : mm UMN1N / UMP1N 5 0.15±0.05 +0.2 1 2 2.8±0.2 ∗

TOKO VARIABLE INDUCTOR

Abstract: diode marking code 2T
Contextual Info: r & T O K TK11816, TK11817, TK11818, TK11819 O DC-DC CONVERTER FEATURES APPLICATIONS • Miniature Package SOT-23L-6 ■ Variable Capacitance and PIN Diode Bias ■ Few External Components ■ Portable Instrumentation ■ Internal Rectifier and Regulator

sot-363 MARKING n10 diode

Abstract: IMN11 SOT-363 marking n10 transistor marking N1 IMN10 IMP11 UMN11N UMP11N marking N11 diode UMN1N
Contextual Info: FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Units : mm FMN1 / FMP1 UMN1N / UMP1N +0.1 −0.06 (All leads have the same dimensions.)

Contextual Info: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101

n13 sot 65

Abstract: FDT461N 29e8 RS80 marking 461 m067
Contextual Info: FDT461N N-Channel Logic Level PowerTrench MOSFET 100V, 0.4A, 2.5Ω Features Applications • rDS ON = 1.45Ω (Typ.), VGS = 4.5V, ID = 0.4A • Servo Motor Load Control • Qg(tot) = 2.36nC (Typ.), VGS = 10V • DC-DC converters • Low Miller Charge • Low QRR Body Diode

FDN363N

Abstract: N6 marking diode marking n9
Contextual Info: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)

LT1009CZ

Abstract: LM136 LT1009 NCV1009 NCV1009D NCV1009DR2 NCV1009Z N3 smd 2492 smd resistor
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance and

n15 to-92

Abstract: LT1009CZ NCV1009 NCV1009Z LM136 LT1009
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance and

DIODE smd marking N7

Abstract: CS1009 CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
Contextual Info: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature

zener n7

Abstract: DIODE smd marking N7 LM136 LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009Z
Contextual Info: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and

n10 marking code sot 23

Abstract: n18 marking code sot 23 n02 marking code sot DDTC144VCA n05 marking code DDTC113ZCA DDTC114WCA DDTC114YCA SOT23 MARKING N02 DDTC123JCA
Contextual Info: SPICE MODELS: DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC114ZCA DDTC114YCA DDTC114WCA DDTC124XCA DDTC144VCA DDTC144WCA DDTC R1¹R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT-23 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

n02 marking code sot

Abstract: n05 marking code SCHEMATIC 10kw POWER DDTC143FE DDTC113ZE DDTC114WE DDTC114YE DDTC123JE DDTC123YE DDTC124XE
Contextual Info: SPICE MODELS: DDTC113ZE DDTC123YE DDTC123JE DDTC143XE DDTC143FE DDTC143ZE DDTC114YE DDTC114WE DDTC124XE DDTC144VE DDTC144WE DDTC R1¹R2 SERIES E NPN PRE-BIASED SMALL SIGNAL SOT-523 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

n05 marking code

Abstract: DDTC114YUA DDTC124XUA n02 marking code sot DDTC113ZUA DDTC114WUA DDTC123JUA DDTC123YUA DDTC143FUA DDTC143XUA
Contextual Info: SPICE MODELS: DDTC113ZUA DDTC123YUA DDTC123JUA DDTC143XUA DDTC143FUA DDTC143ZUA DDTC114YUA DDTC114WUA DDTC124XUA DDTC144VUA DDTC144WUA DDTC R1¹R2 SERIES UA NPN PRE-BIASED SMALL SIGNAL SOT-323 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

N05 TRANSISTOR MARKING CODE

Abstract: n05 marking code DDTC113ZKA transistor n15 n11 n14 marking code DDTC114WKA DDTC114YKA DDTC123YKA DDTC124XKA DDTC143XKA
Contextual Info: SPICE MODELS: DDTC113ZKA DDTC123YKA DDTC123JKA DDTC143XKA DDTC143FKA DDTC143ZKA DDTC114YKA DDTC114WKA DDTC124XKA DDTC144VKA DDTC144WKA DDTC R1¹R2 SERIES KA NPN PRE-BIASED SMALL SIGNAL SC-59 SURFACE MOUNT TRANSISTOR NEW PRODUCT Features • · · · Epitaxial Planar Die Construction

IRF630N

Abstract: TO-220 1030 630N marking s2A N-Channel MOSFET 200v 52e3
Contextual Info: IRF630N N-Channel Power MOSFETs 200V, 9.3A, 0.30Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.200Ω (Typ), VGS = 10V • UIS Rating Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

IRF640N

Abstract: 11A ABS IRF640N FAIRCHILD MOSFET 640N 640N irf640n datasheet N-Channel MOSFET 200v IRF-640N
Contextual Info: IRF640N N-Channel Power MOSFETs 200V, 18A, 0.15Ω Features • Peak Current vs Pulse Width Curve • Ultra Low On-Resistance - rDS ON = 0.102Ω (Typ), VGS = 10V • UIS Rateing Curve • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

FDP8880

Abstract: FDB8880
Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

BA100 diode

Abstract: Diode BA100
Contextual Info: Technical Data MC44BS373CA Rev. 2.6, 6/2004 MC44BS373CA MC44BS373CA Data Sheet PLL-Tuned UHF and VHF Audio/Video High-Integration Modulator SO16NB Package QFN20 Package Ordering Information Device Temp Range Package MC44BS373CAD,R2 –20 to +85°C SO16NB MC44BS373CAFC,R2

FQP45N03L

Abstract: FQP45N03
Contextual Info: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves

Contextual Info: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM

19E-9

Contextual Info: FDP8870 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low

67E-3

Abstract: FDI038AN06A0 FDP038AN06A0
Contextual Info: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge

block diagram of black and white t.v

Abstract: M44BC374T m44bc374 uhf modulator uhf demodulator audio video uhf tv receiver VCCS MDB tv rf modulator mc44355 pulse position modulation demodulation
Contextual Info: Technical Data MC44BC374T/D Rev. 3.1 07/2002 MC44BC374T MC44BC374T PLL Tuned PAL/NTSC UHF and VHF Audio/ Video High Integration Modulator ICs SO16NB Package v Ordering Information Device Temp Range Package MC44BC374TD, R2 -20°C to +85°C SO16NB NOTE: For tape and reel, add R2 suffix.

N302AP

Abstract: ISL9N302AP3 1E25 l 129 v 1E40
Contextual Info: ISL9N302AP3 N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching Optimized for switching applications, this device improves