MARKING M3 TRANSISTOR Search Results

LDTC143ZET1G

Abstract: marking m3 transistor SC-89
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTC143ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an

fairchild marking codes sot-23

Abstract: marking of m7 diodes diode M7 marking M3 KST812M6 Diode marking m7 m7 diode M7 marking codes M7 component KST5088
Contextual Info: KST812M3/M4/M5/M6/M7 KST812M3/M4/M5/M6/M7 General Purpose Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO Collector-Base Voltage Parameter Value -50

BC846ALT1

Abstract: BC846BLT1 BC846 BC847 BC847ALT1 BC847BLT1 BC848 BC849 BC850 BC850BLT1
Contextual Info: LESHAN RADIO COMPA N Y, LTD. General Purpose Transistors NPN Silicon BC846ALT1,BLT1 BC847ALT1,BLT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current Peak value

BC846BLT1

Abstract: BC848C BC846 BC846ALT1 BC847 BC847ALT1 BC847BLT1 BC848 BC849 BC850
Contextual Info: General Purpose Transistors NPN Silicon BC846ALT1,BLT1 BC847ALT1,BLT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector Current Peak value Emitter Current(Peak value)

KST812M7

Abstract: marking m3 transistor KST5088 KST812M3 KST812M4 KST812M5 KST812M6 m6 marking transistor mark M7 MARKING CODE M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA= 2 5t: C haracteristic Sym bol C ollector-B ase Voltage C ollecto r-E m ltte r Voltage E m itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

M6 transistor

Abstract: KST812M6 sot-23 marking code pe marking M6 transistor M6 Marking pnp M7 marking codes mark M7 m6 marking transistor transistor SOT23 m6 sot-23 Marking M6
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector Current C ollector D issipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KST812M3/M4/M5/M6/M7 GENERAL PURPOSE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollecto r C urrent C ollecto r D issipation

SCI0501200

Abstract: b1106 marking 09k
Contextual Info: celduc r e l a i S/CON/SCI0501200/B/11/06/08 s PRELIMINARY DATA Page 1/5 UK IGBT BASED DC SOLID-STATE RELAY SCI0501200 u Latest high voltage IGBT technology generation. u New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

transistor ac51

Abstract: WF020000 SCM0100200 WF141100 WF-141 UE100 EN61000-4-2 55GB WF191100 WF070000
Contextual Info: celduc r e l a i S/CON/SCM0100200/D/28/11/03 s Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM0100200 ! Latest MOSFET technology generation. ! Ultra low on-state resistance. ! New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

0305S

Abstract: SCM040600 EN61000-4-2 EN61000-4-3 WF09 WF141100
Contextual Info: celduc r e l a i S/CON/SCM040600/A/16/03/05 s PRELIMINARY DATA Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM040600 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor

transistor ac51

Abstract: NFEN55011 EN61000-4-2 SCM030200
Contextual Info: celduc r e l a i S/CON/SCM030200/B/07/06/04 s PRELIMINARY !! Page 1/5 GB MOSFET BASED DC SOLID STATE RELAY SCM030200 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

transistor IGBT 30004

Abstract: Transistor 30004 SCI0251700 Transistor 30004 to 3 B-2509 WF070000
Contextual Info: celduc r e l a i S/CON/SCI0251700/B/25/09/08 s PRELIMINARY DATA Page 1/5 UK IGBT BASED DC SOLID-STATE RELAY SCI0251700 u Latest high voltage IGBT technology generation. u New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

TRA75

Abstract: 42VDC 150X150X3
Contextual Info: celduc r e l a i S/CON/SCM015075/C/05/03/07 s PRELIMINARY DATA Page 1/5 UK MOSFET BASED DC SOLID-STATE RELAY SCM015075 X Latest MOSFET technology generation. X Ultra low on-state resistance. X New innovative isolated driver ensuring fast power transistor

iepe

Abstract: SCI0100600
Contextual Info: celduc r e l a i S/CON/SCI0100600/B/07/03/07 s PRELIMINARY DATA Page 1/5 UK IGBT BASED DC SOLID-STATE RELAY SCI0100600 X Latest high voltage IGBT technology generation. X New innovative isolated driver ensuring fast power transistor turn on and off therefore low power transient.

Contextual Info: Series S75DC150 Output to 150A, 42 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and of and thus low power transient

Contextual Info: NEW Series S20DC100 Output to 100A, 200 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

S75DC150

Abstract: NFEN55011 IEC60947-1
Contextual Info: Series S75DC150 Output to 150A, 42 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

S75DC150

Abstract: IEC60947-1 Teledyne Relays 412
Contextual Info: Series S75DC150 Output to 150A, 42 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

Contextual Info: NEW Series S20DC30 Output to 30A, 200 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

Contextual Info: NEW Series S20DC100 Output to 100A, 200 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

S20DC100

Abstract: NFEN55011 IEC60947-1
Contextual Info: NEW Series S20DC100 Output to 100A, 200 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

MMBA812M5

Abstract: marking M3 MMBA812M4 MMBA812M3 MMBA812M6
Contextual Info: 34 MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC DE | b 3 b 7 E S S 003Ô27S a CDIO D E S /O PTO 3 ^C SOT23 continued) 38275 D T - z *- /* MMBA812M3,4,5,6,7 DEVICENO. SMALL-SIGNAL PNP TRANSISTOR TOP VIEW C j • Designed for general-purpose and audio-frequency amplifier

S60DC40

Abstract: varistor ve 17 NFEN55011 varistor wiring diagram IEC60947-1
Contextual Info: Series S60DC40 Output to 40A, 600 Vdc DC Solid-State Relay FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low power transient

Contextual Info: NEW Series S20DC100 Output to 100A, 200 Vdc DC Solid-State Relay PRELIMINARY FEATURES/BENEFITS • Latest generation MOSFET technology • Ultra low on-state resistance • Innovative isolated driver ensures fast power transistor turn on and off and thus low