MARKING M2P DIODE Search Results

Contextual Info: Schottky Barrier Diodes SBD MA3X704D, MA3X704E (MA704WA, MA704WK) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit Reverse voltage (DC) VR 30 V Peak reverse voltage IFM 150 mA Single Double *

marking m2p

Contextual Info: Schottky Barrier Diodes SBD MA3J741D, MA3J741E (MA741WA, MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 • Two MA3J741 (MA741) is contained in one package • Low forward voltage VF and good wave detection efficiency η

Contextual Info: Schottky Barrier Diodes SBD MA3S781D, MA3S781E (MA781WA, MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3° (0.44) 1 2 1.60±0.05 • Two MA3S781 (MA781) is contained in one package • High-density mounting is possible

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SMini3-F2 • Pin Name MA3J741DG 1: Cathode 1 2: Cathode 2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3J741 (MA741) is contained in one package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 (0.44) 1 2 3˚ (0.80)

MA3S781

Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK V10330
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name MA3S781DG 1: Cathode 1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05

MA3X704A

Abstract: MA3X704D MA3X704E MA704A MA704WA MA704WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 1.9±0.1 2.90+0.20

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X704D (MA704WA), MA3X704E (MA704WK) Silicon epitaxial planar type Unit: mm 0.40+0.10 –0.05 For switching For wave detection 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1

MA3J741

Abstract: MA3J741D MA3J741E MA741 MA741WA MA741WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741D (MA741WA), MA3J741E (MA741WK) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 5˚

MA3S781

Abstract: MA3S781D MA3S781E MA781 MA781WA MA781WK
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781D (MA781WA), MA3S781E (MA781WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 For high speed switching (0.44) M Di ain sc te on na tin nc ue e/

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J741DG, MA3J741EG Silicon epitaxial planar type For high speed switching For wave detection M Di ain sc te on na tin nc ue e/ d • Package • Code SMini3-F2 • Pin Name

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781DG, MA3S781EG Silicon epitaxial planar type For high speed switching For wave detection • Package M Di ain sc te on na tin nc ue e/ d • Code SSMini3-F3

shroud for mushroom head push button

Abstract: 40-dia A165-AM-2 zener diode reference guide A22T SMD MARKING CODE OMRON a3t A3PJ-7010-1 seoul smd led 5050 A3PJ-5126 reflective sensors
Contextual Info: Pushbutton Switches OMRON Corporation Industrial Automation Company Sensing Devices Division H.Q. Industrial Sensors Division Shiokoji Horikawa, Shimogyo-ku, Kyoto, 600-8530 Japan Tel: 81 75-344-7022/Fax: (81)75-344-7107 In the interest of product improvement, specifications are

vfd CONTROL circuit diagram

Abstract: 616A TRANSISTOR 74123 Diagram EP9315 EP93XX ds653pp3 transistor said horizontal tt 2222 AP 1531 MRC D17 tx0101
Contextual Info: EP93XX ARM 9 Embedded Processor Family EP93xx Use r ’s Gu id e Copyright 2007 Cirrus Logic, Inc. http://www.cirrus.com SEP 2007 DS785UM1 EP93xx User’s Guide Contacting Cirrus Logic Support For all product questions and inquiries contact a Cirrus Logic Sales Representative.

LH7A404

Abstract: HT 25-19 transistor AC97 ARM922T LCD interface WITH ARM transistor k 2628 2G1 SMC SD MMC card reader marking a21c sdmc 1014 smart card contact
Contextual Info: LH7A404 Universal SOC Advance User’s Guide 6/13/03 This document is released as Beta-level documentation. SHARP reserves the right to change and amend this documentation as necessary to represent the final Production-level development of this device. Specifications are subject to change without notice.

Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V DUAL OPERATIONAL AMPLIFIERS SLOS068R − JUNE 1976 − REVISED JULY 2010 D D D D D 1OUT 1IN− 1IN+ GND 1 8 2 7 3 6 4 5 VCC 2OUT 2IN− 2IN+ LM158, LM158A . . . FK PACKAGE TOP VIEW NC 1IN− NC

L2904

Contextual Info: LM158, LM158A, LM258, LM258A LM358, LM358A, LM2904, LM2904V www.ti.com SLOS068S – JUNE 1976 – REVISED MAY 2013 Dual Operational Amplifiers Check for Samples: LM158, LM258, LM258A, LM358, LM358A, LM2904, LM2904V FEATURES DESCRIPTION • These devices consist of two independent, high-gain