MARKING L4F Search Results

Contextual Info: niCRON TECHNOLOGY INC 5SE D blllSMT 0 0 0 3 4 l4fl “133 I^ IC R O N 8K urn M T5C 6408 X 8 S R AM •4 > -Z V I2 _ SRAM 8K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply

Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SF

Abstract: L4f marking marking L4F
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1

Abstract: MBR140SFT3 SOD-123LF
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1

Abstract: MBR140SFT3
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1G

Abstract: nrvb140s nrvb14 NRVB140SFT1G Diode SOd-123 marking cu l4fm
Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

Contextual Info: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

MBR140SFT1G

Abstract: MBR140SFT1 MBR140SFT3 MBR140SFT3G Diode SOd-123 marking cu
Contextual Info: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

NRVB140SF

Contextual Info: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection

Contextual Info: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high

Contextual Info: SIEMENS Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low dark Current SFH 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im

SMD l4fl

Abstract: smd TRANSISTOR code marking w2 qml-38535 CDFP4-F16 40109B Transistor SMD a7s transistor 5Cv smd
Contextual Info: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 8 10 11 12

sot143 marking code G2

Abstract: Hitachi DSA001652
Contextual Info: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)

marking code g1s

Abstract: marking code g2s Hitachi DSA00164 diode g1s
Contextual Info: BB201M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-713A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;

Hitachi DSA0096

Abstract: 1SV70 BIC801M marking code g2s
Contextual Info: BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-705C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)

Hitachi DSA0096

Abstract: 1SV70 BIC701M
Contextual Info: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)

Hitachi DSA0096

Abstract: 1SV70 BIC701C SC-82AB
Contextual Info: BIC701C Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-704C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)

Hitachi DSA00164

Contextual Info: BB202M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-714A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;

Hitachi DSA002743

Contextual Info: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz

Hitachi DSA0096

Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Contextual Info: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

Hitachi DSA0096

Abstract: 1SV70 BB303M
Contextual Info: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)

14164 1994

Abstract: en 10204 3.2 UNS31254 DN100 steam pipe DN40 PN16 en 10204 3.1 pitot sensor 10204 3.1b material certificate ISO5167 A193-B7
Contextual Info: Data sheet DS/TORBAR-EN Rev. D Torbar Averaging pitot tubes Economical flow metering solutions for gases, liquids and steam Unique profile shape — Ooffers high flow turndown No drift in co-efficient — Ensures long term stability One-piece outer tube — For pipes up to 5000 mm 197 in. diameter

LT1667

Abstract: LT1665 CA10 A058 dk 300 a008 82360SL LCD CMC 116 L01 2164 intel INTEL 82360 CD 2399 GP A049 crystal
Contextual Info: 5bE ]> • 4ÔSbl7S D i n o S M E34 « I T L 1 up/prpHLS irrte* Intel386 CORP SL MICROPROCESSOR SuperSet INTEL 'T~-(4c\ 1 7 -3 ^ Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static lntel386TM SL CPU

Contextual Info: DM383 www.ti.com SPRS870B – APRIL 2013 – REVISED DECEMBER 2013 DM383 DaVinci Digital Media Processor Check for Samples: DM383 1 High-Performance System-on-Chip SoC 1.1 Features 123 • High-Performance DaVinci Digital Media Processors – Up to 1000-MHz ARM Cortex™-A8 RISC