MARKING L4 TOSHIBA Search Results

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

MURATA GRM15

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Fronted IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

SAFDA243MRD

Abstract: SAFDA243MRD9X00R00 9006 MCR01 TA4500F SAFDA243MRD9X00 SAFDA SAFDA243
Contextual Info: TA4500F TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4500F 1.9 GHz Band RX Front-End IC PHS, Digital Cordless Telecommunication Applications Features • Low-noise amplifier / down-conversion mixer • Integrated local buffer amplifier • Single positive power supply: VCC = 3.0 V

2SK3074

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER • • • Output Power Power Gain Drain Efficiency P q = 630mW Gp^ 14.9dB 7j ^45 % M A X IM U M RATINGS Ta = 25°C)

Contextual Info: T O SH IB A 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3074 RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER • • • Output Power Power Gain Drain Efficiency PO=630m W G p^ 14.9dB 7d ^45 % MAXIMUM RATINGS Ta = 25°C SYMBOL RATING

Contextual Info: TO SHIBA 2SK3074 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE d Unit in mm RF PO W ER MOSFET FOR VHF- AND UHF-BAND PO W ER AM PLIFIER 1.6MAX. 4.6MAX. 0.4 +0.05 • • • Output Power Power Gain Drain Efficiency PO^630mW GP^ 14.9dB V j = 45%

5948A

Abstract: 100L 2SC4245 marking L4 800mhz transistor MURATA TTA23A100
Contextual Info: T O S H IB A 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4245 Unit in mm TV TUNER, UHF MIXER APPLICATIONS. VHF-UHF BAND RF AMPLIFIER APPLICATIONS. 2.1 ±0.1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage

Contextual Info: TOSHIBA 2SC4245 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV TUNER, UHF M IXER APPLICATIONS. V H F- U H F BAND RF AM PLIFIER APPLICATIONS. 2.1 ± 0.1 . ± 0.1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage

l20pF

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 Unit in mm TV TUNER, UHF RF AMPLIFIER APPLICATIONS. 2. 1+0. 1 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance. : Crss = 20fF Typ. • Low Noise Figure.

2SK3475

Abstract: 0480F
Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 630 mW min · Gain: GP = 14.9dB (min) · Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C) Characteristics

Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm • Output power: PO = 630 mW min • Gain: GP = 14.9dB (min) • Drain efficiency: ηD = 45% (min) Maximum Ratings (Ta = 25°C)

0480F

Abstract: transistor marking zg c2 2SK3475
Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications • Output power: PO = 630 mW min • Gain: GP = 14.9dB (min) Drain efficiency: ηD = 45% (min) • Maximum Ratings (Ta = 25°C) Characteristics

transistor marking t04

Abstract: NF 846 3SK225
Contextual Info: TOSHIBA 3SK225 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK225 TV TUNER, VHF RF AMPLIFIER APPLICATIONS. FM TUNER APPLICATIONS. TV TUNER, UHF RF AMPLIFIER APPLICATIONS. U nit in mm + 0.2 2.9 - Û3 1 • Superior Cross Modulation Performance.

3SK249

Contextual Info: TOSHIBA 3SK249 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK249 TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low N oise Figure. : N F = 1.5dB (Typ.)

2SK3475

Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

transistor marking R2s

Abstract: 3SK256
Contextual Info: TO SH IBA 3SK256 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3SK256 TV TUNER, UHF RF AMPLIFIER APPLICATIONS • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crss = 0.015pF Typ. • Low N oise Figure

Contextual Info: 2SK3475 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3475 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

grm36

Abstract: grm36 murata murata lot no TG2403CT capacitor DD series murata murata MA Series MURATA GRM36 DD12 MCR01 LQG15
Contextual Info: TG2403CT TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic TG2403CT 1.9GHz Band TX Fronted IC PHS, Digital Cordless Telecommunication Features Common Block • Positive voltage operation: VDD1 = VDD2 = VDD3 = VDD4 = 3.0 V typ . • Small package: CST20 (2.9 mm * 3.9 mm * 0.48 mm)

MURATA GRM15 -V2

Abstract: ICON12 lot No murata GRM21 TA4401CT GRM15 LQG15 TA440
Contextual Info: TA4401CT TENTATIVE TOSHIBA Bipolar Linear Integrated Circuit SiGe Monolithic TA4401CT 1.9 ~ 2.5 GHz Band Power Amplifier PHS, Digital Cordless Telecommunication Application Wireless LAN IEEE802.11b/g Application Bluetooth Class 1 Application Features • Single voltage operation

C185 TRANSISTOR

Abstract: 3sk151
Contextual Info: TOSHIBA 3SK151 TOSHIBA FIELD EFFECT TRANSISTOR 3 SILICON N CHANNEL DUAL GATE MOS TYPE <; k 1 m Unit in mm TV TUNER VHF M IXER APPLICATIONS. VHF RF AM PLIFIER APPLICATIONS. + 0.2 2 . 9 - Cl3 • High Conversion Fain : G^S = 24.5dB Typ. • Low Noise Figure

L44A

Abstract: marking L4 toshiba L4 toshiba marking code toshiba
Contextual Info: TOSHIBA U1DL44A TOSHIBA HIGH EFFICIENCY RECTIFIER HED SILICON EPITAXIAL JUNCTION TYPE U 1 D L4 4 A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATIONS = 200V Repetitive Peak Reverse Voltage V Average Forward Current I f (AV) = 1'° a Very Fast Reverse-Recovery Time

Contextual Info: RFM00U7U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM00U7U VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These

THS118

Abstract: Hall Sensor gaas
Contextual Info: TOSHIBA THS118 TOSHIBA HALL SENSOR GaAs ION IMPLANTED PLANAR TYPE T H S 1 18 Unit in mm HIGH STABILITY MOTOR CONTROL DIGITAL TACHOMETER. CRANK SHAFT POSITION SENSOR. • • • • Super Small Package. Excellent Temperature Characteristics. Wide Operating Temperature Range. ; —55~125°C