MARKING JB SCHOTTKY BARRIER DIODE Search Results

Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode SG40TC12M diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB diode diode marking jb
Contextual Info: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded

marking JB SCHOTTKY BARRIER DIODE

Contextual Info: Ordering number: EN 3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC/DC Converter Applications F eatures • Composite type with a PNP transistor and a Schottky barrier diode contained in one packge, facilitating high-density mounting.

ERA83-004

Abstract: RA83
Contextual Info: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f

RA83

Abstract: ERA83-004 A4DC
Contextual Info: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f

Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the

marking JB SCHOTTKY BARRIER DIODE

Abstract: FDZ7064N FDZ7064S mosfet marking jb
Contextual Info: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the

CH661H-20GP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH661H-20GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 15 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR

diode marking jB

Abstract: marking JB SCHOTTKY BARRIER DIODE marking JB diode transistor marking JB marking jb
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH661H-20PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 15 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR

marking JB SCHOTTKY BARRIER DIODE

Abstract: marking JB C10M25 marking JB diode transistor marking JB
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH761UPT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 12 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR

CH761UGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH761UGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 12 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR

DIODE MARKING EJL

Contextual Info: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

smd marking code UAI

Abstract: DIODE smd marking smd diode schottky code marking 1A smd diode code I5 diode marking code YF smd marking code pi smd diode a9 diode MARKING CODE A9
Contextual Info: Schottky Barrier Diode Single Diode DG1M3 30V 1A Feature • itS/JvSJSMD • Ultra-small SMD • Ultla-thin PKG=0.8mm • 1 5 I r= 0.05mA • Low lR = 0 .0 5 m A • iSj S=0.8m m •<SVf=0.46V • Low V f=0.46V 3É • K 2 / 7 Main Use U — iS J U K lt

x25-m

Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse

Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC6M Unit-mm Weight 0.326g Typ 60V 5A Feature >SM D •SM D • Tj=150°C •P rrsm 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Sm all-PKG T ’A ' ^ V S ' i f S l i E Main Use 1Sw itching Regulator

smd diode schottky code marking 2F

Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.

smd g4l

Abstract: RC25C
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S6M Unit-mm Weight 0.326g Typ 60V 3A Feature • SM D »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K — 3>

smd diode marking YK

Contextual Info: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use

diode tfk s 220

Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
Contextual Info: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC4M PyKLl°- ffl 40V m Unit-mm Weight 1.5g (Typ) 10.2 DA Feature a • SMD <SMD • Tj=150°C 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use 1Switching Regulator

diode g4l

Abstract: smd g4l SMD diode JB 4/5/32R2024/25/g4l smd
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S6M Unit-mm Weight 0.326g Typ 60V 5A Feature »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K —3>

smd marking YF

Abstract: K711 diode marking code YF DIODE SMD CODE MARKING LG J532 smd code marking jr
Contextual Info: Schottky Barrier Diode Single Diode m tm OUTLINE Package : G1F DG1S6 Unit-mm Weight 0.01 lg Typ 60 V 1A 3.5 Feature H • iiS'JvüJSM D • Ultra-small S M D • i2 j® s y = 0 .8 m m • Ultra-thin PKG=0.8m m • < S V f = 0 .5 8 V • Low V f=0.58V

smd diode schottky code marking 2F

Abstract: DG1N15A smd diode 5H J532 DIODE MARKING 9Y 1N711
Contextual Info: Schottky Barrier Diode Single Diode m tm DG 1 N 15A Weight 0.011 g Typ 3.5 CD r Feature a 1Ultra-small SMD • i2j®sy=0.8mm 1Ultra-thin PKG=0.8mm • < S I r = 0 .0 5 m A 1Low Ir = 0 .0 5 itiA L»[c_ <. Lì m (?) I |N 7 1 1 • ^JvS S M D • Unit-m m

1FS6

Abstract: SMD MARKING CODE vv
Contextual Info: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 1F D1FS6 ij V - F V - ? / Ccilhode m ark 60V 1.1 A Feature :i: Î I 1 Small SMD • /JvgySMD Unit-mm Weight 0.058g Typ to rs . h V) o> ^ 1Tj=150°C • Tj=150°C ' P r r s m T ’A ' ^ V ì ' i ì