MARKING JA DIODE Search Results

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues • We declare that the material of product 3 compliance with RoHS requirements. 1 Ordering Information 2 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1G Featrues Pb-Free Package is Available. Ordering Information 3 Device Marking Shipping LBAV74LT1G JA 3000/Tape&Reel LBAV74LT3G JA 10000/Tape&Reel 1 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB

sot23 marking y5

Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Contextual Info: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A

BAV74

Contextual Info: BAV74 Dual Surface Mount Switching Diode SOT-23 Features — For high-speed switching appilication. — Common cathode. Applications — Small signal switching Ordering Information Dimensions in inches and millimeters Type No. Marking Package Code BAV74 JA

bav70

Contextual Info: BAV70 / BAV74 Discrete POWER & Signal Technologies N at ion al Semiconductor BAV70 / 74 CONNECTION DIAGRAMS 0 0 MARKING BAV70 A4 BAV74 JA High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* ta = 25° c unlessothe ,seated

DIODE g6

Abstract: LBAV74LT1
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode LBAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING LBAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF

BAV74LT1

Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value

BAV70

Abstract: BAV74
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 Connection Diagram 3 A4 2 1 1 SOT-23 3 2 MARKING A4 BAV74 BAV70 1 2 JA Small Signal Diode Absolute Maximum Ratings* Symbol VRRM TA = 25°C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Value Units 70 50 200

BAV70

Abstract: BAV74 BAV99 fairchild sot-23 bav70 FAIRCHILD DIODE
Contextual Info: BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value

smd diode marking Ja sot

Abstract: BAV70W Semiconductor smd marking BY INDIA
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT DUAL SWITCHING DIODES BAV70W SOT-323 Formed SMD Package 3 Pin Configuration 1 = ANODE 2 = ANODE 3 = CATHODE 2 1 Marking BAV70W = JA High-Speed Switching Dual Diodes, Common Cathode

fairchild sot-23 bav70

Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
Contextual Info: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

BAV70

Abstract: BAV74 1JA2 BAV70 ON diode bav70 a433
Contextual Info: BAV70 / BAV74 Discrete POWER & Signal Technologies N BAV70 / 74 3 1 2 SOT-23 1 3 CONNECTION DIAGRAMS A4 3 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

Contextual Info: Monolithic Dual Switching Diode BAV74LT1 3 1 ANODE 3 CATHODE 1 2 ANODE 2 CASE 318–08, STYLE 9 SOT–23 TO–236AB DEVICE MARKING BAV74LT1 = JA MAXIMUM RATINGS (EACH DIODE) Rating Reverse Voltage Forward Current Symbol VR IF Value 50 200 Unit Vdc mAdc Peak Forward Surge Current

Contextual Info: BAV70 / 74 BAV70 / 74 Connection Diagram 3 3 A4 2 1 1 BAV70 SOT-23 3 2 MARKING A4 BAV74 1 JA 2 Small Signal Diode Absolute Maximum Ratings * TA = 25°C unless otherwise noted Symbol VRRM Parameter Maximum Repetitive Reverse Voltage Value 70 50 Units V V IF AV

BAV70

Abstract: BAV74 BAV70 ON diode bav70
Contextual Info: BAV70 / BAV74 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAV70 / 74 r7! CONNECTION DIAGRAMS MARKING S O T -2 3 BAV70 A4 BAV74 JA High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* T A = 2 5 ° C unless o th e rw ise noted

Contextual Info: D iscrete POWER & S ig n a l 1 ecnnologies M l C O N D U C T O R TM BAV70 / 74 PH TD S O T -2 3 CONNECTION ET MARKING A4 BAV74 BAV70 DIAGRAMS JA High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Màximum RâtinÇjS

Contextual Info: Silicon Switching Diode Array • • BAV 74 F o r high -spe e d sw itching C o m m o n cathode Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B A V 74 JA Q 62702-A498 Q 62 70 2-A 69 5 S O T 23 Maximum ratings per diode

Contextual Info: SBR12U100P5Q Product Summary VRRM V 100 IO (A) 12 12A SBR SUPER BARRIER RECTIFIER POWERDI®5 Green Features VF max (V) @ +25°C 0.78 IR max (mA) @ +25°C 0.25 •  100% Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and

Contextual Info: SBR15U30SP5Q 15A SBR SUPER BARRIER RECTIFIER POWERDI®5 Green ADVANCED NEW PRODUCT INFORMATION Product Summary VRRM V 30 IO (A) 15 Features and Benefits VF(MAX) (V) 0.49 • IR(MAX) (mA) 0.3 Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and

marking L6A

Abstract: STTH2L06 STTH2L06A STTH2L06RL STTH2L06U diode 400v 2A ultrafast
Contextual Info: STTH2L06 HIGH EFFICIENCY ULTRAFAST DIODE Table 1: Main Product Characteristics IF AV 2A VRRM 600 V Tj 175°C VF (typ) 0.85 V trr (typ) 60 ns A K FEATURES AND BENEFITS • ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times

R6U marking

Abstract: STTH2R06 STTH2R06A STTH2R06RL STTH2R06U
Contextual Info: STTH2R06 HIGH EFFICIENCY ULTRAFAST DIODE Table 1: Main Product Characteristics IF AV 2A VRRM 600 V Tj 175°C VF (typ) 1V trr (typ) 35 ns A K FEATURES AND BENEFITS • ■ ■ ■ Very low conduction losses Negligible switching losses Low forward and reverse recovery times

Contextual Info: SBR660CTLQ 6A SBR SUPER BARRIER RECTIFIER Green Product Summary Features VRRM V IO (A) VF max (V) @+25°C IR max (mA) @+25°C 60 6 0.57 0.3 • 100% Avalanche Tested.  Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and

S10U45S

Contextual Info: SBR10U45SP5Q 10A SBR SUPER BARRIER RECTIFIER POWERDI®5 Product Summary VRRM V 45 IO (A) 10 Features and Benefits VF MAX (V) @+25°C 0.47 •  IR MAX (mA) @+25°C 0.3 capability than schottky diodes ensuring more rugged and  Description and Applications