MARKING HMB Search Results

mds 30

Abstract: BRIDGE RECTIFIERS MB16PT marking MDs MB12PT ultrafast bridge rectifiers
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Maximum Maximum Maximum Maximum Average Forward Peak Reverse Peak Rectified Current Surge Current Current Reverse @Half-Wave @ 25°C @ 8.3mS Voltage Resistive Load Superimposed TA IR IO PRV IFM Surge

BRIDGE RECTIFIERS

Abstract: MB12 MB14 MB16S DB104-S DB102S
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Maximum Peak Reverse Voltage P RV V PK Maximum Average Rectified Current @ Half-Wave Resistive Load 60Hz IO @ TA oC A AV Maximum Maximum Maximum Forward Peak

Contextual Info: Printview: End plate; with fixing flange - Item No.: 261-361 . End plate; with fixing flange Item No.: 261-361 . End plate; with fixing flange . Marking . Business data Supplier WAGO Item no. 261-361 EAN 4017332141260 Content 1 Order amount 50 Customer item number

HM28S

Abstract: HMBT28S
Contextual Info: HI-SINCERITY Spec. No. : HN200213 Issued Date : 2002.08.01 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBT28S NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT28S is a NPN silicon transistor, designed for use in general-purpose SPEECH SYNTHSIZER Voice Rom IC audio output driver stage amplifier

HMBTH10

Contextual Info: HI-SINCERITY Spec. No. : HN200101 Issued Date : 2000.02.01 Revised Date : 2008.07.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.

HMBT9014

Abstract: HMBT9015
Contextual Info: HI-SINCERITY Spec. No. : HN200212 Issued Date : 2002.07.01 Revised Date : 2004.09.08 Page No. : 1/5 MICROELECTRONICS CORP. HMBT9014 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT9014 is designed for use in pre-amplifier of low level and low noise. Features

marking MOW

Abstract: marking code mow
Contextual Info: TVS I I PROlEK DEVICES E n g in e e r e d s o lu t io n s f o r t h e t r a n s i e n t e n v ir o n m e n t T r a n a ie n t V o lta g e S u D P r '’e E35 □ n £= HMBLC05/24 Law Capacitance DESCRIPTION This series of Surface Mount TVS Arrays is designed for applications which require multiple line

HMBZ5221B

Abstract: HMBZ5222B HMBZ5223B HMBZ5225B HMBZ5226B HMBZ5227B HMBZ5228B HMBZ5229B HMBZ5230B HMBZ5257B
Contextual Info: HI-SINCERITY Spec. No. : HE6803 Issued Date : 1995.12.28 Revised Date : 2004.08.30 Page No. : 1/13 MICROELECTRONICS CORP. HMBZ5221B thru HMBZ5257B ZENER DIODES SOT-23 Thermal Characteristics Characteristics Symbol Total Device Dissipation FR-5 Board Max Unit

HMBD4148

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6802 Issued Date : 1995.12.09 Revised Date : 2002.10.25 Page No. : 1/2 HMBD4148 HIGH-SPEED SWITCHING DIODE Description The HMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon

HMBT4125

Abstract: sot-23 marking code RD
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6844 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/2 HMBT4125 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4125 is designed for general purpose switching and amplifier applications.

HMBT2484

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6847 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT2484 NPN EPITAXIAL PLANAR TRANSISTOR Description Low Noise Transistor. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

smd code marking LF sot23

Abstract: D531 MARKING D53 smd transistor db6 sot-23 HMBD2004 HMBD2004C HMBD2004S D53 SOT23 d53 MARKING CODE SOT23
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6858 Issued Date : 1994.01.25 Revised Date : 2002.10.25 Page No. : 1/2 HMBD2004\C\S Description The HMBD2004\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package.

smd code marking LF sot23

Abstract: smd code A82 A82 SMD smd diode A82 smd A82 HMBD2003 HMBD2003C HMBD2003S
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6857 Issued Date : 1994.01.25 Revised Date : 2002.10.25 Page No. : 1/2 HMBD2003\C\S Description The HMBD2003\C\S are general purpose diodes fabricated in planar technology, and encapsulated in small plastic SMD SOT-23 package.

HMBD914

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6538 Issued Date : 1997.01.18 Revised Date : 2002.10.25 Page No. : 1/3 HMBD914 HIGH-SPEED SWITCHING DIODE Description The HMBD914 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The device is manufactured by the silicon

HMBT8599

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6811 Issued Date : 1997.12.31 Revised Date : 2002.10.25 Page No. : 1/3 HMBT8599 PNP EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMBT5088

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6824 Issued Date : 1993.08.27 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5088 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT5088 is designed for low noise, high gain, general purpose amplifier applications.

HMBT4124

Abstract: ROC SOT 23
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6859 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT4124 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4124 is designed for general purpose switching and amplifier applications.

HMBT5087

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6850 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5087 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5087 is designed for low noise, high gain, general purpose amplifier applications.

HMBT5086

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6849 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBT5086 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5086 is designed for low noise , high gain , general purpose amplifier applications.

HMBTA14

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2001.06.15 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C

HMBTA42

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6848 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA42 NPN EPITACIAL PLANAR TRANSISTOR Description High Voltage Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMBD4148

Abstract: DIODE SMD MARKING 5.C
Contextual Info: HI-SINCERITY Spec. No. : HE6802 Issued Date : 1995.12.09 Revised Date : 2004.09.01 Page No. : 1/3 MICROELECTRONICS CORP. HMBD4148 HIGH-SPEED SWITCHING DIODE Description SOT-23 The HMBD4148 is designed for high-speed switching application in hybrid thick-and

HMBT6427

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6846 Issued Date : 1995.07.21 Revised Date : 2002.10.25 Page No. : 1/3 HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

vhf receiver

Abstract: HMBTH10
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200101 Issued Date : 2000.02.01 Revised Date : 2002.10.25 Page No. : 1/3 HMBTH10 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTH10 is designed for use in VHF & UHF oscillators and VHF mixer in tuner of a TV receiver.