MARKING H5 SOT 23 Search Results

BCW89

Abstract: H5 MARKING
Contextual Info: SEMICONDUCTOR BCW89 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BCW89 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking H2A sot-23

Abstract: MPS3904RLRA EIA 481 SOT363 H2B sot23 transistor 228 T3
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

free transistor equivalent book

Abstract: marking H2A sot-23 marking W2 sot363 H2B sot23 transistor number code book FREE
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. For the most current Tape & Reel information, please download BRD8011/D

ic 556

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA COLLECTOR 3 General Purpose Transistors 1 BASE 2 EMITTER COLLECTOR 3 1 BASE PNP BCX17LT1 BCX18LT1 NPN BCX19LT1 BCX20LT1 Voltage and current are negative for PNP transistors 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor PNP Silicon BCW68GLT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc

EIA-468 label location

Abstract: W1 sot 363 MPS3904RLRA free transistor equivalent book MARKING W2 SOT23 sot353 transistor MARKING CODE LAYOUT G SOT89 marking W2 sot363
Contextual Info: DL126TRS/D Tape & Reel and Packaging Specifications for Small-Signal Transistors, FETs and Diodes http://onsemi.com Excerpted from the ON Semiconductor Small–Signal Transistors, FETs and Diodes Device Data Book, DL126/D. Embossed Tape and Reel is used to facilitate automatic pick and place equipment feed requirements. The tape is used as the

marking H2A sot-23

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Chopper Transistor MMBT404ALT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB Symbol Value Unit Collector–Emitter Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol

JB MARKING SOT-23

Abstract: DELTA fan bfb
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH10LT1 VHF/UHF Transistor NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 25

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistor BSV52LT1 COLLECTOR 3 NPN Silicon 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 12 Vdc Collector – Base Voltage

MARKING CODE 2l SC70-6

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT5401LT1 COLLECTOR 3 PNP Silicon Motorola Preferred Device 1 BASE 2 EMITTER 3 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage

Contextual Info: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to

MBD110DW

Abstract: MBD110DWT1 MBD330DW MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1
Contextual Info: Dual SCHOTTKY Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–

MBD-1102

Abstract: MBD330DWT1 MBD770DW MBD770DWT1 MMBD101LT1 MMBD301LT1 MMBD701LT1 MBD110DW MBD110DWT1 MBD330DW
Contextual Info: LESHAN RADIO COMPANY, LTD. Dual SCHOTTKY Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and

transistor D 2395

Abstract: Motorola 2396
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTA13LT1 MMBTA14LT1* Darlington Amplifier Transistors NPN Silicon *Motorola Preferred Device COLLECTOR 3 BASE 1 3 1 EMITTER 2 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit

marking td sot323

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6520LT1 PNP Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

Contextual Info: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to

Contextual Info: MC74HC1G04 Single Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The MC74HC1G04 output drive current is 1/2 compared to

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Amplifier NPN Silicon MMBTA20LT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 40 Vdc Emitter – Base Voltage

Transistor sot363 MARKING 16a

Abstract: Transistor sot-363 MARKING 16a
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon BCW33LT1 COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 20 Vdc Collector – Base Voltage

Contextual Info: MBD110DWT1G, MBD330DWT1G, MBD770DWT1G Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces

motorola transistor dpak marking

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Noise Transistor MMBT5087LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45

low noise transistor bc 179

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW61BLT1 BCW61CLT1 BCW61DLT1 General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 CASE 318 – 08, STYLE 6 SOT– 23 TO – 236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage