MARKING H2B Search Results

A09 N03 MOSFET

Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Contextual Info: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04

Contextual Info: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to

Contextual Info: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to

Contextual Info: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot

Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

02D2G

Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

02D2G

Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Contextual Info: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot

10IF0

Contextual Info: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot

bul45d2g

Abstract: BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot

vce 1200 and 5 amps npn transistor to 220 pack

Abstract: BUL45D2 BUL45D2G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: BUL45D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot

Contextual Info: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot

TRANSISTOR AH-16

Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

CBF493S

Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

marking 513 SOD-323

Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Contextual Info: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

MOTOROLA DATE CODE MARKING

Abstract: marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its

Contextual Info: TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

TPC6502

Contextual Info: TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)

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169d

Abstract: MCR100 NCR169D NCR169DRLRA NCR169DRLRM
Contextual Info: NCR169D Advance Information General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor http://onsemi.com PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate

169d

Abstract: marking code onsemi MCR100 NCR169D NCR169DG NCR169DRLRA NCR169DRLRAG NCR169DRLRM NCR169DRLRMG
Contextual Info: NCR169D General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor http://onsemi.com PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.

SMA marking code LG

Abstract: MPS3904 MPS3904RLRA radial leaded TVS Motorola Master Selection Guide
Contextual Info: Tape and Reel Specifications and Packaging Specifications Page Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . 5.12–2 Embossed Tape and Reel Ordering Information . 5.12–3 Embossed Tape and Reel Data for Discretes . . . 5.12–4 Lead Tape Packaging Standards

KAI-02150

Contextual Info: KAI-02150 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 4.1 PS-0007 KAI-02150 Image Sensor TABLE OF CONTENTS Summary Specification . 5

Contextual Info: KAI-02050 IMAGE SENSOR 1600 H X 1200 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 6.1 PS-0006 KAI-02050 Image Sensor TABLE OF CONTENTS Summary Specification . 5